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    UNCOOLED INFRARED IMAGING DEVICE
    1.
    发明申请
    UNCOOLED INFRARED IMAGING DEVICE 审中-公开
    未经处理的红外成像装置

    公开(公告)号：US20130248714A1

    公开(公告)日：2013-09-26

    申请号：US13728009

    申请日：2012-12-27

    申请人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

    发明人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

    IPC分类号： H01L27/146 ,  G01J5/20

    CPC分类号： G01J5/12 ,  G01J5/023 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/14649 ,  H04N5/33

    摘要： An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

    摘要翻译： 根据实施例的非冷却红外成像装置包括：形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素，并检测入射的红外线。 每个参考像素包括位于第一凹部上方的第一单元。 第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。 每个红外检测像素包括位于第二凹部上方的第二单元，并且具有比第一单元更大的面积。 第二单元包括：位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元，其在第二凹部上方支撑第二热电转换单元。 第二热电转换单元包括：第二红外线吸收膜; 和第二热电转换元件。

    INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    红外成像装置及其制造方法

    公开(公告)号：US20120007205A1

    公开(公告)日：2012-01-12

    申请号：US12883732

    申请日：2010-09-16

    申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

    发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

    IPC分类号： H01L31/101 ,  H01L31/18

    CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

    摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

    摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

    Solid state imaging device
    5.
    发明授权
    Solid state imaging device 有权
    固态成像装置

    公开(公告)号：US08581199B2

    公开(公告)日：2013-11-12

    申请号：US13247025

    申请日：2011-09-28

    申请人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

    发明人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

    IPC分类号： G01T1/24

    CPC分类号： G01J5/22 ,  G01J5/20 ,  H04N5/33

    摘要： According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.

    摘要翻译： 根据一个实施例，固态成像装置包括被配置为通过接收红外光来改变输出电位的红外检测像素，非敏感像素，行选择线和差分放大器。 当非敏感像素接收到红外光时，输出电位的变化量小于当红外线检测像素接收到红外光时的输出电位的变化量。 行选择线被配置为将驱动电位施加到红外检测像素和非敏感像素。 差分放大器包括输入红外线检测像素的输出电位的一个输入端子和输入非敏感像素的输出电位的另一个输入端子。

    Uncooled infrared image sensor
    6.
    发明授权
    Uncooled infrared image sensor 有权
    未冷却的红外图像传感器

    公开(公告)号：US08338902B2

    公开(公告)日：2012-12-25

    申请号：US13050512

    申请日：2011-03-17

    申请人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

    发明人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

    IPC分类号： H01L31/024

    CPC分类号： H01L27/14649 ,  G01J5/007 ,  G01J5/20 ,  G01J2005/068

    摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

    摘要翻译： 根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括：第一红外线吸收膜和第一热敏元件。 参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

    SOLID STATE IMAGING DEVICE
    7.
    发明申请
    SOLID STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20120228506A1

    公开(公告)日：2012-09-13

    申请号：US13247025

    申请日：2011-09-28

    申请人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

    发明人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

    IPC分类号： H01L27/146

    CPC分类号： G01J5/22 ,  G01J5/20 ,  H04N5/33

    摘要： According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.

    摘要翻译： 根据一个实施例，固态成像装置包括被配置为通过接收红外光来改变输出电位的红外检测像素，非敏感像素，行选择线和差分放大器。 当非敏感像素接收到红外光时，输出电位的变化量小于当红外线检测像素接收到红外光时的输出电位的变化量。 行选择线被配置为将驱动电位施加到红外检测像素和非敏感像素。 差分放大器包括输入红外线检测像素的输出电位的一个输入端子和输入非敏感像素的输出电位的另一个输入端子。

    Infrared imaging element
    8.
    发明授权
    Infrared imaging element 有权
    红外成像元件

    公开(公告)号：US08415622B2

    公开(公告)日：2013-04-09

    申请号：US13414941

    申请日：2012-03-08

    申请人： Kazuhiro Suzuki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    发明人： Kazuhiro Suzuki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    IPC分类号： H01L25/00

    CPC分类号： H01L27/14618 ,  G01J5/024 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

    摘要翻译： 根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热， 由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。 在第二基板和红外线检测单元之间形成第二空腔。

    INFRARED IMAGING ELEMENT
    9.
    发明申请
    INFRARED IMAGING ELEMENT 有权
    红外成像元件

    公开(公告)号：US20120228497A1

    公开(公告)日：2012-09-13

    申请号：US13414941

    申请日：2012-03-08

    申请人： Kazuhiro SUZUKI ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    发明人： Kazuhiro SUZUKI ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14618 ,  G01J5/024 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

    摘要翻译： 根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热， 由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。 在第二基板和红外线检测单元之间形成第二空腔。