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    Uncooled infrared image sensor
    2.
    发明授权
    Uncooled infrared image sensor 有权
    未冷却的红外图像传感器

    公开(公告)号：US08338902B2

    公开(公告)日：2012-12-25

    申请号：US13050512

    申请日：2011-03-17

    申请人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

    发明人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

    IPC分类号： H01L31/024

    CPC分类号： H01L27/14649 ,  G01J5/007 ,  G01J5/20 ,  G01J2005/068

    摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

    摘要翻译： 根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括：第一红外线吸收膜和第一热敏元件。 参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

    INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    红外成像装置及其制造方法

    公开(公告)号：US20120007205A1

    公开(公告)日：2012-01-12

    申请号：US12883732

    申请日：2010-09-16

    申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

    发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

    IPC分类号： H01L31/101 ,  H01L31/18

    CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

    摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

    摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

    Infrared imaging device and method of manufacturing the same
    5.
    发明授权
    Infrared imaging device and method of manufacturing the same 有权
    红外成像装置及其制造方法

    公开(公告)号：US08304848B2

    公开(公告)日：2012-11-06

    申请号：US12883732

    申请日：2010-09-16

    申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

    发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

    IPC分类号： H01L31/00 ,  H01L31/04

    CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

    摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

    摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

    Infrared imaging element
    6.
    发明授权
    Infrared imaging element 有权
    红外成像元件

    公开(公告)号：US08415622B2

    公开(公告)日：2013-04-09

    申请号：US13414941

    申请日：2012-03-08

    申请人： Kazuhiro Suzuki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    发明人： Kazuhiro Suzuki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    IPC分类号： H01L25/00

    CPC分类号： H01L27/14618 ,  G01J5/024 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

    摘要翻译： 根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热， 由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。 在第二基板和红外线检测单元之间形成第二空腔。

    INFRARED IMAGING ELEMENT
    7.
    发明申请
    INFRARED IMAGING ELEMENT 有权
    红外成像元件

    公开(公告)号：US20120228497A1

    公开(公告)日：2012-09-13

    申请号：US13414941

    申请日：2012-03-08

    申请人： Kazuhiro SUZUKI ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    发明人： Kazuhiro SUZUKI ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14618 ,  G01J5/024 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

    摘要翻译： 根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热， 由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。 在第二基板和红外线检测单元之间形成第二空腔。

    INFRARED SOLID STATE IMAGING DEVICE
    8.
    发明申请
    INFRARED SOLID STATE IMAGING DEVICE 审中-公开
    红外固态成像装置

    公开(公告)号：US20130093902A1

    公开(公告)日：2013-04-18

    申请号：US13648376

    申请日：2012-10-10

    申请人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

    发明人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

    IPC分类号： H04N5/33

    CPC分类号： H04N5/33 ,  H04N5/3597

    摘要： An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant α in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1−α) so that an infrared image with less afterimage is provided.

    摘要翻译： 一种红外固体摄像装置，具备：具有热敏像素的红外线检测元件单元，对由红外线检测元件单元得到的红外图像信号进行模数变换的AD转换单元;以及数字信号处理单元， 图像信号转换成数字信号。 数字信号处理单元存储从数字信号产生并且在紧邻当前帧之前的帧中获取的图像值，减去通过将在当前帧之前的帧中获取的图像值乘以预定常数α而获得的图像值 在从当前帧中获取的图像值的0到1的范围内，并且进行将通过减法获得的合成图像值乘以1 /（1-α）的处理，使得提供具有较少余像的红外图像。

    Image sensor and manufacturing method thereof
    9.
    发明授权
    Image sensor and manufacturing method thereof 有权
    图像传感器及其制造方法

    公开(公告)号：US08067740B2

    公开(公告)日：2011-11-29

    申请号：US12508846

    申请日：2009-07-24

    申请人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

    发明人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14669 ,  H01L27/1203 ,  H01L27/14683

    摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

    摘要翻译： 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与 第一个像素。

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号：US20100025584A1

    公开(公告)日：2010-02-04

    申请号：US12508846

    申请日：2009-07-24

    申请人： Keita SASAKI ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

    发明人： Keita SASAKI ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

    IPC分类号： H01L31/02 ,  H01L31/00

    CPC分类号： H01L27/14669 ,  H01L27/1203 ,  H01L27/14683

    摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

    摘要翻译： 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与 第一个像素。