公开(公告)号：US20130033931A1

公开(公告)日：2013-02-07

申请号：US13560708

申请日：2012-07-27

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC分类号： G11C11/16

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

摘要： Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.

摘要翻译： 提供一种存储元件，其包括存储层，其根据磁体的磁化状态保存信息;磁化固定层，其具有作为存储在存储层中的信息的参考的磁化;以及绝缘层，其由 设置在所述存储层和所述磁化固定层之间的非磁性体。 通过使用在存储层，绝缘层和磁化固定层的层构造的层叠方向上流动的电流发生的自旋转矩磁化反转来反转存储层的磁化来存储信息，以及 存储层小于磁化方向同时变化的尺寸。

公开(公告)号：US20120300541A1

公开(公告)日：2012-11-29

申请号：US13461437

申请日：2012-05-01

申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： A storage element includes: a storage layer which retains information by a magnetization state of a magnetic substance; a magnetization pinned layer having magnetization which is used as the basis of the information stored in the storage layer; and an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer. The storage element is configured to store information by reversing magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer, and when the saturation magnetization of the storage layer and the thickness thereof are represented by Ms (emu/cc) and t (nm), respectively, (1489/Ms)−0.593

摘要翻译： 存储元件包括：存储层，其通过磁性物质的磁化状态保持信息; 具有磁化的磁化固定层，其被用作存储在存储层中的信息的基础; 以及设置在存储层和磁化固定层之间的非磁性物质的中间层。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋扭矩磁化反转来反转存储层的磁化来存储信息，并且当 存储层的饱和磁化强度和其厚度分别由Ms（emu / cc）和t（nm）表示，（1489 / Ms）-0.593

公开(公告)号：US20120061780A1

公开(公告)日：2012-03-15

申请号：US13224369

申请日：2011-09-02

申请人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

发明人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

IPC分类号： H01L43/02

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/10

摘要： Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.

摘要翻译： 本文公开了一种存储元件，包括：存储层，其具有与膜表面垂直的磁化，并且其中相对于信息改变磁化方向; 具有垂直于膜表面的磁化的磁化固定层成为由多个磁性层组成的存储在存储层中的信息的参考，并且具有层叠多个磁性层的多层铁笔结构 另一个通过非磁性层; 以及由非磁性材料制成并设置在所述存储层和所述磁化固定层之间的绝缘层。

公开(公告)号：US20120056286A1

公开(公告)日：2012-03-08

申请号：US13216474

申请日：2011-08-24

申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  G11C11/161

摘要： There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.

摘要翻译： 公开了一种存储元件，其包括层叠结构，该分层结构包括具有垂直于膜面的磁化和其信息方向变化的磁化方向的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层之间的绝缘层。 自旋极化的电子沿分层结构的层叠方向注入，由此存储层的磁化方向变化，并且相对于存储层执行信息的记录，有效的抗磁场的大小 存储层接收小于存储层的饱和磁化量，并且存储层和磁化固定层具有使界面磁各向异性能量变得大于反磁能的方式的膜厚度。

公开(公告)号：US20120056283A1

公开(公告)日：2012-03-08

申请号：US13215405

申请日：2011-08-23

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer, and a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.

摘要翻译： 公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 磁化固定层，其具有垂直于膜面的磁化，并成为存储在存储层中的信息的参考; 以及绝缘层，其设置在所述存储层和所述磁化固定层之间并且由非磁性层形成，其中在具有所述存储层的层状结构的层叠方向上注入自旋极化的电子， 绝缘层和磁化固定层，从而磁化方向变化，并且相对于存储层执行信息记录，存储层接收的有效抗磁场的大小小于饱和磁化强度 内存层的数量。

公开(公告)号：US20120001281A1

公开(公告)日：2012-01-05

申请号：US13150995

申请日：2011-06-01

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

IPC分类号： H01L29/82

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.

摘要翻译： 这里公开了一种磁存储元件，包括：参考层，其被配置为具有固定到预定方向的磁化方向; 记录层，被配置为具有在与记录信息相对应的方向上由于自旋注入而改变的磁化方向; 中间层，被配置为将记录层与参考层分离; 以及被配置为加热记录层的发热体。 记录层的材料是这样一种磁性材料，其在150℃下的磁化是在室温下的磁化强度至少为50％，并且在150℃至200℃范围内的温度下的磁化处于 在室温下磁化强度为10％至80％。

公开(公告)号：US20110305077A1

公开(公告)日：2011-12-15

申请号：US13098996

申请日：2011-05-02

申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： G11C11/14

CPC分类号： G11C11/161

摘要： Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.

摘要翻译： 这里公开了一种存储器件，包括：存储元件，其包括存储层，用于根据磁性材料的磁化状态保存信息;固定磁化层，其通过非磁性层设置在存储层上， 磁化方向固定在与膜表面平行的方向上，磁性层通过非磁性层而相对于存储层设置在与固定磁化层相反的一侧，并且其磁化方向为 垂直于膜表面的方向; 以及使电流通过存储元件沿存储元件的层的层叠方向流过的布线。

公开(公告)号：US09093211B2

公开(公告)日：2015-07-28

申请号：US13451043

申请日：2012-04-19

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC分类号： H01F10/32 ,  G11C11/16 ,  H01L43/08 ,  H01F41/30 ,  H01L27/22 ,  H01F41/32 ,  B82Y40/00

CPC分类号： H01F10/3286 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/303 ,  H01F41/325 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information.

摘要翻译： 存储元件包括具有垂直于层表面的磁化的存储层，并且根据磁性材料的磁化状态存储信息; 具有作为存储层的信息并垂直于层表面的参考的磁化的固定磁化层; 由非磁性材料形成并夹在所述存储层和所述固定磁化层之间的夹层; 与所述中间层相对的与所述存储层相邻的矫顽力增强层，由Cr，Ru，W，Si或Mn形成; 以及由与矫顽力增强层相邻并与存储层相对的氧化物形成的自旋势垒层。 使用由包括存储层，中间层和固定磁化层的层结构的层叠方向上的电流引起的自旋转矩磁化反转，存储层磁化反转，从而存储信息。

公开(公告)号：US08743594B2

公开(公告)日：2014-06-03

申请号：US13227144

申请日：2011-09-07

申请人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

发明人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01F10/32

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer.

摘要翻译： 公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录 相对于存储层执行信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，并且以与膜的接触形式形成Ta膜 与磁化固定层的绝缘层侧相对的面。

公开(公告)号：US08693239B2

公开(公告)日：2014-04-08

申请号：US13226953

申请日：2011-09-07

申请人： Masanori Hosomi ,  Kazuhiro Bessho ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Masanori Hosomi ,  Kazuhiro Bessho ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： G11C11/00

CPC分类号： H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co—Fe—B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.

摘要翻译： 公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中所述存储层具有Co-Fe-B层和属于1A组，2A组，3A组中的任一个的元件的层叠结构 5A组或6A组，沿层叠结构的层叠方向注入自旋极化的电子，由此存储层的磁化方向变化，并且相对于存储层进行信息的记录， 存储层接收的有效抗磁场的大小小于存储层的饱和磁化量。