公开(公告)号：US20150289046A1

公开(公告)日：2015-10-08

申请号：US14275337

申请日：2014-05-12

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen

IPC: H04R1/08

CPC classification number: H04R31/003 ,  B81B3/0021 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/08 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003

Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

Abstract translation: MEMS器件包括背板电极和与背板电极间隔开设置的膜。 膜包括可移位部分和固定部分。 背板电极和膜被布置成使得膜的固定部分与背板电极的重叠区域小于最大重叠。

公开(公告)号：US20150145079A1

公开(公告)日：2015-05-28

申请号：US14611953

申请日：2015-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Wolfgang Friza ,  Wolfgang Klein

IPC: H04R31/00 ,  H04R19/00 ,  H04R7/14 ,  H04R19/04

CPC classification number: H04R31/003 ,  B81B3/001 ,  B81B3/0072 ,  B81B2201/0257 ,  H04R7/14 ,  H04R19/005 ,  H04R19/04

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.

Abstract translation: 在一个实施例中，制造半导体器件的方法包括氧化衬底以形成在衬底的顶表面上方延伸的局部氧化物区域。 在局部氧化物区域和衬底的顶表面上形成膜层。 去除膜层下面的一部分基底。 去除膜层下面的局部氧化物区域。

公开(公告)号：US20140264651A1

公开(公告)日：2014-09-18

申请号：US13804934

申请日：2013-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe ,  Carsten Ahrens ,  Stefan Barzen ,  Wolfgang Friza

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/001 ,  B81B3/0027 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00404 ,  B81C1/00984 ,  B81C2201/017 ,  B81C2201/115

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。