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    Method for forming a microelectromechanical device
    3.
    发明授权
    Method for forming a microelectromechanical device 有权

    公开(公告)号：US09902612B2

    公开(公告)日：2018-02-27

    申请号：US15629834

    申请日：2017-06-22

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

    Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

    CAPACITIVE MICROPHONE WITH INSULATED CONDUCTIVE PLATE
    4.
    发明申请
    CAPACITIVE MICROPHONE WITH INSULATED CONDUCTIVE PLATE 有权
    带绝缘导电板的电容式麦克风

    公开(公告)号：US20160192086A1

    公开(公告)日：2016-06-30

    申请号：US14582223

    申请日：2014-12-24

    Applicant: Infineon Technologies AG

    Inventor： Stefan Barzen ,  Andre Brockmeier ,  Marc Fueldner ,  Stephan Pindl ,  Wolfgang Friza

    IPC: H04R23/00

    CPC classification number: H04R19/016

    Abstract: A capacitive microphone may include a housing, a membrane, and a first backplate, wherein a first insulating layer may be disposed on a first side of the first backplate facing the membrane and a second insulating layer may be disposed on a second side of the first backplate opposite to the first side of the first backplate. A further insulating layer may be disposed on a side wall of at least one of a plurality of perforation holes in the first backplate. Each conductive surface of the first backplate may be covered with insulating material.

    Abstract translation: 电容麦克风可以包括壳体，膜和第一背板，其中第一绝缘层可以设置在第一背板的面向膜的第一侧上，并且第二绝缘层可以设置在第一绝缘层的第二侧上 背板与第一背板的第一侧相对。 另外的绝缘层可以设置在第一背板中的多个穿孔中的至少一个的侧壁上。 第一背板的每个导电表面可以用绝缘材料覆盖。

    Methods for producing thin-film layers and microsystems having thin-film layers
    6.
    发明授权
    Methods for producing thin-film layers and microsystems having thin-film layers 有权

    公开(公告)号：US11414320B2

    公开(公告)日：2022-08-16

    申请号：US17065156

    申请日：2020-10-07

    Applicant: Infineon Technologies AG

    Inventor： Alfred Sigl ,  Wolfgang Friza ,  Stefan Geissler

    IPC: B81C1/00 ,  H01L21/311 ,  H01L21/677 ,  H01L23/00 ,  H04R19/00 ,  H01L21/768

    Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.

    Method for processing a layer structure and microelectromechanical component
    7.
    发明授权
    Method for processing a layer structure and microelectromechanical component 有权

    公开(公告)号：US11180362B2

    公开(公告)日：2021-11-23

    申请号：US16878161

    申请日：2020-05-19

    Applicant: Infineon Technologies AG

    Inventor： Andre Brockmeier ,  Wolfgang Friza ,  Daniel Maurer

    IPC: B81C1/00 ,  B81B7/00

    Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

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