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103 条记录 (耗时 0.045 秒)

    Semiconductor device having carrier extraction in electric field alleviating layer
    73.
    发明授权
    Semiconductor device having carrier extraction in electric field alleviating layer 有权
    具有电场减轻层载流子提取的半导体装置

    公开(公告)号：US09082815B2

    公开(公告)日：2015-07-14

    申请号：US14244038

    申请日：2014-04-03

    申请人： Masahiro Sugimoto ,  Yuichi Takeuchi

    发明人： Masahiro Sugimoto ,  Yuichi Takeuchi

    IPC分类号： H01L29/739 ,  H01L29/66 ,  H01L29/36 ,  H01L29/423 ,  H01L29/10 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20

    CPC分类号： H01L29/7397 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/7789

    摘要： A semiconductor device disclosed in this specification includes a p+ contact region, an n+ source region, a p− base region, an n− drift region, a gate electrode, an insulator, a p+ electric field alleviating layer, and a p− positive hole extraction region. The electric field alleviating layer has same impurity concentration as the base region or higher, contacts a lower surface of the base region, and is formed in a same depth as the gate trench or in a position deeper than the gate trench. A positive hole extraction region extends to contact the electric field alleviating layer from a position to contact an upper surface of a semiconductor substrate or a first semiconductor region, and extracts a positive hole that is produced in the electric field alleviating layer at the avalanche breakdown to the upper surface of the semiconductor substrate.

    摘要翻译： 在本说明书中公开的半导体装置包括p +接触区域，n +源极区域，基极区域，n漂移区域，栅电极，绝缘体，p +电场缓和层和ap-空穴提取区域 。 电场缓和层具有与基底区域相同的杂质浓度或更高的接触基底区域的下表面，并且形成在与栅极沟槽相同的深度或比栅极沟槽更深的位置。 正空穴提取区域延伸以从与半导体衬底或第一半导体区域的上表面接触的位置接触电场缓和层，并且在雪崩击穿时提取在电场减轻层中产生的正空穴 半导体衬底的上表面。

    Printing apparatus
    74.
    发明授权
    Printing apparatus 有权
    印刷装置

    公开(公告)号：US08608298B2

    公开(公告)日：2013-12-17

    申请号：US13087286

    申请日：2011-04-14

    申请人： Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Masahiro Sugimoto ,  Takeaki Nakano ,  Susumu Hirosawa

    发明人： Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Masahiro Sugimoto ,  Takeaki Nakano ,  Susumu Hirosawa

    IPC分类号： B41J2/175

    CPC分类号： B41J2/17509 ,  B41J2/17596

    摘要： Provided is a printing apparatus in which bubbles in a print head are easily removed. The printing apparatus includes a first one-way valve disposed between the pump and the ink tank in the collection channel, the first one-way valve allowing movement of ink from the pump to the ink tank and blocking movement of ink from the ink tank to the pump; a circulation channel that connects the ink tank to the collection channel at a position between the pump and the first one-way valve, the circulation channel enabling circulation of ink from the ink tank, through the print head, and to the ink tank; and a second one-way valve disposed in the circulation channel, the second one-way valve allowing movement of ink from the ink tank to the pump and blocking movement of ink from the pump to the ink tank.

    摘要翻译： 提供了一种其中容易去除打印头中的气泡的打印设备。 打印装置包括设置在收集通道中的泵和墨水罐之间的第一单向阀，第一单向阀允许墨水从泵移动到墨水盒并阻止墨水从墨水盒移动到 泵; 循环通道，其在所述泵和所述第一单向阀之间的位置处将所述墨水罐连接到所述收集通道，所述循环通道使得能够从所述墨水罐通过所述打印头和所述墨水罐循环墨水; 以及设置在所述循环通道中的第二单向阀，所述第二单向阀允许墨从所述墨罐移动到所述泵并阻止墨从所述泵移动到所述墨槽。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    77.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20120217639A1

    公开(公告)日：2012-08-30

    申请号：US13499652

    申请日：2010-09-02

    申请人： Masahiro Sugimoto ,  Akinori Seki ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

    发明人： Masahiro Sugimoto ,  Akinori Seki ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

    IPC分类号： H01L23/482 ,  H01L21/74

    CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

    摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.

    摘要翻译： 提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。 制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。 在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。 结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。

    Transistor
    78.
    发明授权
    Transistor 有权
    晶体管

    公开(公告)号：US08188514B2

    公开(公告)日：2012-05-29

    申请号：US12540230

    申请日：2009-08-12

    申请人： Masahiro Sugimoto ,  Tat-Sing Paul Chow ,  Zhongda Li ,  Tetsu Kachi ,  Tsutomu Uesugi

    发明人： Masahiro Sugimoto ,  Tat-Sing Paul Chow ,  Zhongda Li ,  Tetsu Kachi ,  Tsutomu Uesugi

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7787 ,  H01L29/0642 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/66462 ,  H01L29/7788

    摘要： An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.

    摘要翻译： 公开了一种HEMT型晶体管，其是常闭型，栅极阈值电压的变化小。 晶体管设置有p型区域，势垒区域，绝缘膜，栅极电极。 沟道区域连接到p型区域的上表面。 通道区域是n型或i型，并且设置有第一通道区域和第二通道区域。 阻挡区域与第一通道区域的上表面形成异质结。 绝缘膜连接到第二通道区域的上表面和阻挡区域的上表面。 栅电极经由绝缘膜面向第二沟道区和阻挡区。 第一通道区域和第二通道区域在电流通路中串联布置。

    RECORDING APPARATUS
    79.
    发明申请
    RECORDING APPARATUS 有权
    录音设备

    公开(公告)号：US20110279541A1

    公开(公告)日：2011-11-17

    申请号：US12965102

    申请日：2010-12-10

    申请人： Akira Kida ,  Masahiro Sugimoto ,  Masaharu Ueda

    发明人： Akira Kida ,  Masahiro Sugimoto ,  Masaharu Ueda

    IPC分类号： B41J23/00

    CPC分类号： B41J2/515 ,  B41J11/0025 ,  B41J25/34

    摘要： A holder that holds a line recording head is displaced in a sheet width direction against the urging force of an elastic portion to bring an abutment portion of the holder into contact with one of a plurality of positioning surfaces provided at a reference portion of a sheet conveying mechanism. The holder is positioned and fixed to the reference portion, with the urging force exerted thereto.

    摘要翻译： 保持行记录头的保持器抵抗弹性部分的推动力沿纸张宽度方向移位，使保持件的抵接部分与设置在纸张传送的参考部分的多个定位表面中的一个相接触 机制。 保持器定位并固定到参考部分上，并施加施力。

    RECORDING APPARATUS
    80.
    发明申请
    RECORDING APPARATUS 审中-公开
    录音设备

    公开(公告)号：US20110279525A1

    公开(公告)日：2011-11-17

    申请号：US12963230

    申请日：2010-12-08

    申请人： Seiji Suzuki ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Susumu Hirosawa ,  Takeaki Nakano

    发明人： Seiji Suzuki ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Susumu Hirosawa ,  Takeaki Nakano

    IPC分类号： B41J2/165

    CPC分类号： B41J2/16585

    摘要： An apparatus includes a recording head having nozzle chips arranged in a staggered configuration along a second direction that intersects a first direction in which a sheet is conveyed, a first suction portion corresponding to a first row of nozzle chips in the staggered configuration, and a second suction portion corresponding to a second row of nozzle chips. The first suction portion and the second suction port are in a positional relationship in which they are displaced in the second direction so as to correspond to displacement between a first nozzle chip in the first row and its neighboring second nozzle chip in the second row in the second direction. The apparatus further includes a positioning member having a plurality of reference surfaces for use in positioning the recording head at different locations in a third direction that intersects the first direction and the second direction.

    摘要翻译： 一种装置包括具有喷嘴芯片的记录头，沿着第二方向布置成交错布置的喷嘴芯片，该第二方向与其中输送片材的第一方向相交，与交错构造中的第一排喷嘴芯片对应的第一吸入部分， 抽吸部分对应于第二排喷嘴芯片。 第一吸入部和第二吸入口处于位置关系，它们在第二方向上位移，以对应于第一排中的第一喷嘴芯片和第二排中的相邻的第二喷嘴芯片之间的位移 第二个方向 该装置还包括定位构件，该定位构件具有多个参考表面，用于将记录头定位在与第一方向和第二方向相交的第三方向上的不同位置处。