公开(公告)号：US20070259623A1

公开(公告)日：2007-11-08

申请号：US11628039

申请日：2005-06-03

申请人： Koichiro Tanaka ,  Tomohiro Kimura ,  Naganori Shirakata ,  Shuya Hosokawa

发明人： Koichiro Tanaka ,  Tomohiro Kimura ,  Naganori Shirakata ,  Shuya Hosokawa

IPC分类号： H04B1/00 ,  H04B15/00

CPC分类号： H04B7/0854 ,  H04B17/345

摘要： A radio communication device that, even if it is interfered by a radio transmission station other than a radio transmission station with which it intends to communicate, estimates a signal transmitted from the intended radio transmission station by taking into account the influence of the interference, by obtaining an estimator of “s” that denotes a column vector representing a signal transmitted from the radio transmission station, in accordance with a following expression: s=RssHH(HRssHH+Ruu)−1r, where “Rss” denotes a covariance matrix of the column vector “s”, “r” denotes a column vector representing the signal received by the signal receiving unit, “H” denotes a matrix being the numerical sequence calculated by the first calculating unit, “Ruu” denotes a covariance matrix being the numerical sequence calculated by the second calculating unit, “H” denotes a complex conjugate transposition, and “−1” denotes an inverse matrix.

摘要翻译： 一种无线电通信装置，即使是由与其打算进行通信的无线电发送站以外的无线电发送站的干扰，也可以通过考虑干扰的影响来估计从预期的无线电发送站发送的信号，由 根据以下表达式获得表示表示从无线电发送站发送的信号的列向量的“s”的估计器：s = RssH H（H s H H H H + Ruu） ^{-1，其中“Rss”表示列向量“s”的协方差矩阵，“r”表示表示由信号接收单元接收的信号的列向量“H” 表示由第一计算单元计算的数字序列的矩阵，“Ruu”表示由第二计算单元计算的数字序列的协方差矩阵，“H”表示复共轭转置，“ -1 “表示逆矩阵。}

公开(公告)号：US20070212826A1

公开(公告)日：2007-09-13

申请号：US11749250

申请日：2007-05-16

申请人： Shunpei Yamazaki ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Koichiro Tanaka

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  B23K26/0738 ,  B23K26/08 ,  B23K26/082 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator. A first region of the semiconductor film is irradiated with the laser light passed through the optical system such that one point of the first region of the semiconductor film is irradiated with at least two shots. A second region of the semiconductor film is also irradiated with the laser light passed through the optical system such that one point of the second region of the semiconductor film is irradiated with at least two shots. The first region and the second region have a portion at which they overlap, and the semiconductor film is etched into semiconductor layers for transistors in areas outside the portion.

摘要翻译： 通过在基板上形成半导体膜并用激光照射薄膜来制造显示装置。 激光从振荡器产生，通过包括滤波器的衰减器，并且在穿过衰减器之后通过光学系统。 用通过光学系统的激光照射半导体膜的第一区域，使得半导体膜的第一区域的一个点被照射至少两个照射。 半导体膜的第二区域也被穿过光学系统的激光照射，使得半导体膜的第二区域的一个点被照射至少两个镜头。 第一区域和第二区域具有它们重叠的部分，并且半导体膜被蚀刻到用于该部分外部的区域中的晶体管的半导体层。

公开(公告)号：US07253032B2

公开(公告)日：2007-08-07

申请号：US10125529

申请日：2002-04-19

申请人： Shunpei Yamazaki ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Koichiro Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/034 ,  B23K26/123 ,  B23K26/1435 ,  B23K26/1436 ,  B23K26/147 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/3226 ,  H01L29/66757 ,  Y10S438/935

摘要： First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film 102b is flattened, and a semiconductor film 102c having fewer depressions and projections on the surface can be obtained.

摘要翻译： 为了得到在氧气中含有大的凹凸的半导体膜102b，将第一激光照射到能量密度为400〜500mj / cm 2的半导体膜102中 表面。 然后，去除通过照射第一激光形成的氧化膜105a。 之后，吹入氧浓度为10ppm以下的惰性气体，同时照射第二激光（能量密度高于第一激光的照射能量密度）。 因此，半导体膜102b的表面被平坦化，并且可以获得在表面上具有较少凹凸的半导体膜102c。

公开(公告)号：US20070178672A1

公开(公告)日：2007-08-02

申请号：US10584729

申请日：2005-10-18

申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/0853 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/78621 ,  H01L29/78648 ,  Y10T117/1076

摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.

摘要翻译： 在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。 根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。 具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。 因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

公开(公告)号：US07245802B2

公开(公告)日：2007-07-17

申请号：US10885635

申请日：2004-07-08

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： G02B6/26 ,  G02B6/00

CPC分类号： G03F7/70075 ,  B23K26/0604 ,  B23K26/067 ,  B23K26/0732 ,  B23K2101/40 ,  G02B6/4206 ,  G02B27/0927 ,  G02B27/0994 ,  H01S3/005

摘要： A cylindrical lens array cannot be manufactured so that each cylindrical lens has the same radius of curvature and the same accuracy in the surface. Therefore, when the laser annealing is performed using the cylindrical lens array, the beam spots divided by the cylindrical lens array cannot be superposed completely in the same surface. As a result, there is a region where the energy is attenuated in the edge portion of the rectangular beam to be formed, and therefore the intensity distribution of the laser beam becomes inhomogeneous. In the present invention, the cylindrical lens array is used in combination with the optical waveguide. After dividing the laser beam in a predetermined direction by the cylindrical lens array, the divided beams are combined, and then the laser beam is incident into the optical waveguide that acts upon the same direction as the predetermined direction. This can correct the variation in the intensity of the laser beam due to the processing inaccuracy of the cylindrical lens array.

摘要翻译： 不能制造柱面透镜阵列，使得每个柱面透镜在曲面上具有相同的曲率半径和相同的精度。 因此，当使用柱面透镜阵列执行激光退火时，由柱面透镜阵列分割的光束斑点不能完全重叠在相同的表面中。 结果，存在在要形成的矩形梁的边缘部分中能量衰减的区域，因此激光束的强度分布变得不均匀。 在本发明中，柱面透镜阵列与光波导组合使用。 在通过柱面透镜阵列在预定方向上分割激光束之后，将分割的光束组合，然后激光束入射到沿与预定方向相同的方向作用的光波导中。 这可以校正由于柱面透镜阵列的处理不准确而导致的激光束强度的变化。

公开(公告)号：US20070160096A1

公开(公告)日：2007-07-12

申请号：US11646354

申请日：2006-12-28

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： H01S3/00

CPC分类号： B23K26/0626 ,  B23K26/0732 ,  B23K26/0738 ,  B23K26/0853 ,  B23K2101/40 ,  C30B13/24 ,  C30B29/06 ,  C30B35/00 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1285 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01S3/005 ,  H01L2924/00

摘要： Laser light is emitted from a laser oscillator, and the laser light is made to enter a beam expander optical system including a concave lens through a correction lens. The laser oscillator, the correction lens and the concave lens are disposed so that, when an emission point of the laser oscillator is a first conjugate point, a point at which an image at the first conjugate point is formed through the correction lens is a second conjugate point, a distance between the correction lens and the second conjugate point is b, a focal length of the concave lens is f, and a distance between the correction lens and the concave lens is X, the X satisfies b−3|f|≦X≦b+|f|.

摘要翻译： 从激光振荡器发射激光，使激光进入包括通过校正透镜的凹透镜的光束扩展器光学系统。 激光振荡器，校正透镜和凹透镜被设置为使得当激光振荡器的发射点是第一共轭点时，通过校正透镜形成第一共轭点处的图像的点是第二 共轭点之间，校正透镜和第二共轭点之间的距离为b，凹透镜的焦距为f，校正透镜与凹透镜之间的距离为X，X满足b-3 | f | <= X <= b + | f |。

公开(公告)号：US20070139660A1

公开(公告)日：2007-06-21

申请号：US11640394

申请日：2006-12-18

申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

IPC分类号： G01B11/14

CPC分类号： B23K26/0853 ,  B23K26/04 ,  B23K26/0738 ,  G03F9/7088 ,  H01L21/02675 ,  H01L21/2026

摘要： The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.

摘要翻译： 本发明提供一种激光照射装置和激光照射方法，该激光照射装置和激光照射方法能够通过校正由于温度变化导致的来自预定位置的激光束的照射位置的偏移而精确地进行激光束的照射。 激光照射装置包括发射激光束的激光振荡器; 设置有照射物体的XY台阶; 光学系统，其将激光束成形为设置在XY台上的照射物体的表面上的线性光束; 对照射物体的表面发光的照明; 以及用于对照射物体的表面上的光的反射光进行成像的相机，其中从由照相机成像的反射光检测到的线性光束的照射位置的未对准被校正。

公开(公告)号：US07229864B2

公开(公告)日：2007-06-12

申请号：US10984391

申请日：2004-11-09

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： By using lasers having different wavelengths in laser annealing of an amorphous semiconductor film, the amorphous semiconductor film can be crystallized and the crystallinity of the crystallized film is improved. A laser 126 to 370 nm in wavelength is used first to subject an amorphous semiconductor film to laser annealing, thereby obtaining a crystalline semiconductor film. In desirable laser annealing, a subject surface is irradiated with a laser beam processed by an optical system into a linear laser beam that is linear in section on the subject surface. Next, a laser 370 to 650 nm in wavelength is used to irradiate the above crystalline semiconductor film by again processing the laser beam into a linear beam through an optical system. A crystalline semiconductor film thus obtained has an excellent crystallinity. If this crystalline semiconductor film is used to form an active layer of a TFT, an electric characteristic of the TFT can be improved.

公开(公告)号：US07221451B2

公开(公告)日：2007-05-22

申请号：US10926351

申请日：2004-08-26

申请人： Hideyuki Ohtake ,  Koichiro Tanaka ,  Masaya Nagai ,  Junpei Yamashita ,  Kumiko Yamashita

发明人： Hideyuki Ohtake ,  Koichiro Tanaka ,  Masaya Nagai ,  Junpei Yamashita ,  Kumiko Yamashita

IPC分类号： G01J3/28

CPC分类号： G01J3/12 ,  G01J3/4338 ,  G01J11/00 ,  G01N21/3581 ,  G01N21/3586

摘要： A method for measuring a spectrum of a terahertz pulse includes generating a terahertz pulse using an ultrashort pulsed pumping light, generating a white light pulse using an ultrashort pulsed probe light, stretching and chirping the white light pulse modulating the chirped white light pulse such that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, analyzing an electric field of the teraherz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and transforming the analyzed electric field signal into a frequency spectrum of the terahertz pulse.

摘要翻译： 用于测量太赫兹脉冲的频谱的方法包括使用超短脉冲泵浦光产生太赫脉冲，使用超短脉冲探测光产生白光脉冲，拉伸和啁啾调制啁啾的白光脉冲的白光脉冲，使得 啁啾脉冲和啁啾的白光脉冲同步地照射到电光晶体中，使得啁啾的白光脉冲被在由太赫兹脉冲辐射的电光晶体处感应的电场信号调制，检测啁啾的白色光谱 通过多通道检测器在电光调制步骤中调制光脉冲，从由多通道频谱检测步骤检测的啁啾白光脉冲的频谱分析辐射到电光晶体的太赫兹脉冲的电场 并将分析的电场信号变换为太赫兹脉冲的频谱。

公开(公告)号：US20070059949A1

公开(公告)日：2007-03-15

申请号：US11595921

申请日：2006-11-13

申请人： Shunpei Yamazaki ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Koichiro Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/034 ,  B23K26/123 ,  B23K26/1435 ,  B23K26/1436 ,  B23K26/147 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/3226 ,  H01L29/66757 ,  Y10S438/935

摘要： First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film 102b is flattened, and a semiconductor film 102c having fewer depressions and projections on the surface can be obtained.

摘要翻译： 为了得到在氧气中含有大的凹凸的半导体膜102b，将第一激光照射到能量密度为400〜500mj / cm 2的半导体膜102中 表面。 然后，去除通过照射第一激光形成的氧化膜105a。 之后，吹入氧浓度为10ppm以下的惰性气体，同时照射第二激光（能量密度高于第一激光的照射能量密度）。 因此，半导体膜102b的表面被平坦化，并且可以获得在表面上具有较少凹凸的半导体膜102c。