公开(公告)号：US20110165346A1

公开(公告)日：2011-07-07

申请号：US13051591

申请日：2011-03-18

申请人： Manchao Xiao ,  Arthur Kenneth Hochberg

发明人： Manchao Xiao ,  Arthur Kenneth Hochberg

IPC分类号： C23C16/34 ,  C07F7/10 ,  C09D7/12 ,  C23C16/44 ,  C23C16/50

CPC分类号： H01L21/02211 ,  C07F7/025 ,  C09D5/00 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

摘要： Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

摘要翻译： 已经发现了液态氨基硅烷类，其允许生产通式为SixCyNz的硅碳氮化物膜。 与之前使用的一些前体相比，这些氨基硅烷在室温和压力下是液体，允许方便的处理。 此外，本发明涉及一种制备这种膜的方法。 化合物类通常由下式表示：及其混合物，其中下式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如烷基，具有式R中R和R的烷基也可组合 并且R 2表示单键，（CH 2）n，环或SiH 2。

公开(公告)号：US20110143032A1

公开(公告)日：2011-06-16

申请号：US13031387

申请日：2011-02-21

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： C23C16/44 ,  C09D7/12

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US07932413B2

公开(公告)日：2011-04-26

申请号：US12267790

申请日：2008-11-10

申请人： Manchao Xiao ,  Arthur Kenneth Hochberg

发明人： Manchao Xiao ,  Arthur Kenneth Hochberg

IPC分类号： C07F7/02

CPC分类号： H01L21/02211 ,  C07F7/025 ,  C09D5/00 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

摘要： Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

摘要翻译： 已经发现可以生产含硅膜的液体氨基硅烷类。 与之前使用的一些前体相比，这些氨基硅烷在室温和压力下是液体，允许方便的处理。 此外，本发明涉及一种制备这种膜的方法。 化合物类通常由下式表示：及其混合物，其中下式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如烷基，具有式R中R和R的烷基也可组合 并且R 2表示单键，（CH 2）n，环或SiH 2。

公开(公告)号：US07875556B2

公开(公告)日：2011-01-25

申请号：US11129862

申请日：2005-05-16

申请人： Manchao Xiao ,  Arthur Kenneth Hochberg

发明人： Manchao Xiao ,  Arthur Kenneth Hochberg

IPC分类号： H01L21/302

CPC分类号： H01L21/02211 ,  C07F7/025 ,  C09D5/00 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

摘要： Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

摘要翻译： 已经发现了液态氨基硅烷类，其允许生产通式为SixCyNz的硅碳氮化物膜。 与之前使用的一些前体相比，这些氨基硅烷在室温和压力下是液体，允许方便的处理。 此外，本发明涉及一种制备这种膜的方法。 化合物类通常由下式表示：及其混合物，其中下式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如烷基，具有式R中R和R的烷基也可组合 并且R 2表示单键，（CH 2）n，环或SiH 2。

公开(公告)号：US20080042105A1

公开(公告)日：2008-02-21

申请号：US11872221

申请日：2007-10-15

申请人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

发明人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

IPC分类号： C09K15/32

CPC分类号： C07F7/21 ,  C07F7/089 ,  C07F7/20 ,  C23C16/401 ,  C23C16/4402

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of an antioxidant polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and an antioxidant.

摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于电子材料制造中用于氧化硅的化学气相沉积工艺中的聚合，包括向其提供有效量的抗氧化聚合抑制剂 环四硅氧烷; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和抗氧化剂。

公开(公告)号：US20070004931A1

公开(公告)日：2007-01-04

申请号：US11513950

申请日：2006-08-30

申请人： Manchao Xiao ,  Arthur Hochberg ,  Kirk Cuthill

发明人： Manchao Xiao ,  Arthur Hochberg ,  Kirk Cuthill

IPC分类号： C07F7/10

CPC分类号： H01L21/3185 ,  C07F7/10 ,  C23C16/308 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0226 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3125

摘要： A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4-n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.

摘要翻译： 公开了用于化学气相沉积中的选自由氧氮化硅，氮化硅和氧化硅组成的组的材料的前体组合物。 组合物包含下式的肼基硅烷：<？in-line-formula description =“In-line Formulas”end =“lead”？> [R 1] 2 N -NH] n Si（R 2）4-n <？in-line-formula description =“In-line Formulas”end = “尾”→其中每个R 1独立地选自C 1至C 6的烷基; 每个R 2独立地选自氢，烷基，乙烯基，烯丙基和苯基; 并且n = 1-4。

公开(公告)号：US20060258173A1

公开(公告)日：2006-11-16

申请号：US11129862

申请日：2005-05-16

申请人： Manchao Xiao ,  Arthur Hochberg

发明人： Manchao Xiao ,  Arthur Hochberg

IPC分类号： H01L21/31

CPC分类号： H01L21/02211 ,  C07F7/025 ,  C09D5/00 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

摘要： Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

摘要翻译： 已经发现液体氨基硅烷的类别，其允许生产通式为Si x Si x N z z的硅碳氮化物膜。 与之前使用的一些前体相比，这些氨基硅烷在室温和压力下是液体，允许方便的处理。 此外，本发明涉及一种制备这种膜的方法。 化合物类通常由下式表示：及其混合物，其中下式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如烷基，环烷基与R 并且式A中的R 1还可以组合成环状基团，并且R 2代表单键，（CH 2 CH 2） n，环，或SiH 2 2。