公开(公告)号：US20070004931A1

公开(公告)日：2007-01-04

申请号：US11513950

申请日：2006-08-30

申请人： Manchao Xiao ,  Arthur Hochberg ,  Kirk Cuthill

发明人： Manchao Xiao ,  Arthur Hochberg ,  Kirk Cuthill

IPC分类号： C07F7/10

CPC分类号： H01L21/3185 ,  C07F7/10 ,  C23C16/308 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0226 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3125

摘要： A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4-n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.

摘要翻译： 公开了用于化学气相沉积中的选自由氧氮化硅，氮化硅和氧化硅组成的组的材料的前体组合物。 组合物包含下式的肼基硅烷：<？in-line-formula description =“In-line Formulas”end =“lead”？> [R 1] 2 N -NH] n Si（R 2）4-n <？in-line-formula description =“In-line Formulas”end = “尾”→其中每个R 1独立地选自C 1至C 6的烷基; 每个R 2独立地选自氢，烷基，乙烯基，烯丙基和苯基; 并且n = 1-4。

公开(公告)号：US20060182885A1

公开(公告)日：2006-08-17

申请号：US11057446

申请日：2005-02-14

申请人： Xinjian Lei ,  Hareesh Thridandam ,  Kirk Cuthill ,  Arthur Hochberg

发明人： Xinjian Lei ,  Hareesh Thridandam ,  Kirk Cuthill ,  Arthur Hochberg

IPC分类号： C23C16/00

CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02142 ,  H01L21/0215 ,  H01L21/02153 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/0234 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/318

摘要： This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2mH4-n-m (n=1,2; m=0,1,2; n+m=

摘要翻译： 本发明涉及通过循环沉积前体制备三元金属氮化硅膜的改进方法。 改进在于使用具有NH和SiH官能团的金属酰胺和硅源作为导致形成这种金属SiN膜的前体。 通过循环沉积顺序地将前体施加到衬底的表面上。 示例性硅源是由下式表示的单烷基氨基硅烷和肼基吡啶：<？in-line-formula description =“In-line formula”end =“lead”？>（R 1） （n = 1,2; m = 0,1,2; n + 1）n + m = <3）; <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> and <？in-line -formulae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> （2）N-NH（x-1）2（x） 1,2; y = 0,1,2; x + y = <3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中在上式R < 1-4是相同或不同的并且独立地选自烷基，乙烯基，烯丙基，苯基，环烷基，氟代烷基，甲硅烷基烷基。

公开(公告)号：US20060045986A1

公开(公告)日：2006-03-02

申请号：US10929755

申请日：2004-08-30

申请人： Arthur Hochberg ,  Kirk Cuthill

发明人： Arthur Hochberg ,  Kirk Cuthill

IPC分类号： H05H1/24

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274

摘要： A process for the plasma enhanced chemical vapor deposition of silicon nitride films from nitrogen, argon, xenon, helium or ammonia and an aminosilane, preferably of the formula: (t-C4H9NH)2SiH2 that provides improved properties, particularly etch resistance and low hydrogen concentrations as well as stress control, of the resulting film for use in the semiconductor industry.

摘要翻译： 用于等离子体增强氮，氮，氙，氦或氨和氨基硅烷的氮化硅膜的化学气相沉积的方法，优选具有下式：（tC 4 H 9） 提供了用于半导体工业的所得薄膜的改进的性能，特别是耐蚀刻性和低氢浓度以及应力控制的改进的性质，特别是NH 2 2 SiH 2。

公开(公告)号：US20050181633A1

公开(公告)日：2005-08-18

申请号：US10780183

申请日：2004-02-17

申请人： Arthur Hochberg ,  Kirk Cuthill ,  Thomas Deis ,  Lisa Deis ,  Andre Lagendijk

发明人： Arthur Hochberg ,  Kirk Cuthill ,  Thomas Deis ,  Lisa Deis ,  Andre Lagendijk

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/48 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/469

CPC分类号： H01L21/02205 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  H01L21/02123 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185

摘要： Inorganic precursors, namely iodosilane precursors, for the low temperature, low pressure deposition of silicon-containing films is provided therein. In one aspect, there is provided a process for forming a silicon-containing film process comprising: introducing a substrate and gaseous reagents comprising an iodosilane precursor having three or less iodine atoms bound to the silicon atom and at least one reagent selected from an oxygen-containing reactive gas, a nitrogen-containing reactive gas, a hydrogen-containing reactive gas and mixtures thereof into a reaction chamber; heating the reaction chamber to one or more temperatures ranging from 200° C. to 900° C. to form the silicon containing film on the substrate, provided that if the iodosilane precursor has three iodine atoms bound to the silicon atom then the heating step is conducted at one or more pressures less than 600 Torr.

摘要翻译： 在其中提供了用于低温，低压沉积含硅膜的无机前体，即碘代硅烷前体。 一方面，提供一种形成含硅膜工艺的方法，包括：引入底物和包含具有三个或更少碘原子的碘代硅烷前体与气体原子结合的气态试剂和至少一种选自氧 - 含有反应气体，含氮反应气体，含氢反应性气体及其混合物; 将反应室加热至200℃至900℃的一个或多个温度，以在基板上形成含硅膜，条件是如果碘代硅烷前体具有三个与硅原子结合的碘原子，则加热步骤为 在一个或多个低于600乇的压力下进行。