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5368 条记录 (耗时 0.039 秒)

    Method for forming semiconductor device comprising metal oxide
    71.
    发明授权
    Method for forming semiconductor device comprising metal oxide 失效
    包含金属氧化物的半导体器件的形成方法

    公开(公告)号：US5474945A

    公开(公告)日：1995-12-12

    申请号：US147580

    申请日：1993-11-05

    申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

    发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

    IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/60 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L21/76897 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245 ,  Y10S257/90

    摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

    摘要翻译： 一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有 金属。 根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置 的门。 此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

    Method for manufacturing a liquid crystal device
    72.
    发明授权
    Method for manufacturing a liquid crystal device 失效
    液晶装置的制造方法

    公开(公告)号：US5474629A

    公开(公告)日：1995-12-12

    申请号：US803224

    申请日：1991-12-06

    申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

    发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

    IPC分类号： G02F1/1334 ,  G02F1/1339 ,  G02F1/1341 ,  B32B31/00

    CPC分类号： G02F1/1334 ,  B32B37/1207 ,  B32B2310/0806 ,  G02F1/13392 ,  G02F1/1341 ,  Y10T156/109 ,  Y10T156/1093

    摘要： A method for manufacturing a liquid crystal device, particularly a dispersion-type liquid crystal electrooptical device, which comprises a pair of substrates having incorporated therebetween a light-control layer comprising a transparent solid and a liquid crystal material and spacers, said substrates having provided thereon electrode layers and at least one of the substrates being transparent, is disclosed. The method comprises:coating the electrode layer side of one of the substrates with a material which gives the light-control layer; and, laminating and fixing the pair of substrates to give a predetermined layered structure.The spacers are uniformly disposed between the substrates by dispersing spacers on one of the electrode layers or on the light-control layer or applying a mixture comprising spacers, a liquid crystal material and a material for providing a transparent solid on one of the electrode layers.The process is economical and enables large-sealed liquid crystal electrooptical devices which can provide uniform displays, at an extremely few steps comprising coating once the substrate with a material for the light-control layer.

    摘要翻译： 一种液晶装置的制造方法，特别是分散型液晶电光装置，其特征在于，包括一对基板，其中包括透明固体和液晶材料的光控制层和间隔物，所述基板设置在其上 公开了电极层和至少一个衬底是透明的。 该方法包括：用提供光控制层的材料涂覆其中一个基板的电极层侧; 并且层叠并固定该对基板以产生预定的层状结构。 通过将间隔物分散在电极层之一或光控制层上，或者施加包含间隔物，液晶材料和用于在一个电极层上提供透明固体的材料的混合物，将间隔物均匀地设置在基板之间。 该方法是经济的，并且能够提供均匀显示器的大密封液晶电光装置，其极小的步骤包括使用光控层的材料涂覆基板。

    Mounting structure for a semiconductor chip having a buffer layer
    74.
    发明授权
    Mounting structure for a semiconductor chip having a buffer layer 失效
    具有缓冲层的半导体芯片的安装结构

    公开(公告)号：US5194934A

    公开(公告)日：1993-03-16

    申请号：US855481

    申请日：1992-03-23

    申请人： Shunpei Yamazaki ,  Takeshi Oka ,  Akira Mase

    发明人： Shunpei Yamazaki ,  Takeshi Oka ,  Akira Mase

    IPC分类号： H01L21/56

    CPC分类号： H01L21/563 ,  H01L2224/73203 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079

    摘要： A semiconductor device is comprised of glass substrate, an epoxy-phenol resin for buffer means formed on the glass substrate, a set of electrical wiring provided on the epoxy-phenol resin and a semiconductor chip provided with a bump of gold and bonded to the electric wiring with therebetween chip provided with the bump therebetween using a photo-cured type of an epoxy resin.

    摘要翻译： 半导体器件由玻璃基板，用于形成在玻璃基板上的缓冲装置的环氧酚醛树脂，设置在环氧酚醛树脂上的一组电线和设置有金凸块的半导体芯片组成， 使用光固化型环氧树脂与它们之间的芯片布线，在其间设置有凸块。

    Optoelectronic panel and method of making the same
    78.
    发明授权
    Optoelectronic panel and method of making the same 失效
    光电板及其制作方法

    公开(公告)号：US4917474A

    公开(公告)日：1990-04-17

    申请号：US198699

    申请日：1988-05-23

    申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshimitsu Konuma

    发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshimitsu Konuma

    IPC分类号： G02F1/135 ,  G02F1/1365

    CPC分类号： G02F1/1354 ,  G02F1/1365

    摘要： An optoelectronic panel is disclosed wherein the liquid crystal device and the photo detecting device are formed on a common transparent substrate. The liquid crystal display device includes at least one liquid crystal element which is supplied with a drive signal via a non-single-crystal semiconductor diode serving as a non-linear element and a photo diode of the same structure as the non-single-crystal semiconductor diode serving as the non-linear element of the liquid crystal display device. The liquid crystal display device and the photo detecting device are disposed side by side on the transparent substrate. The liquid crystal element, the non-linear element, the non-single-crystal element and the non-single-crystal semiconductor diode, as the non-linear element, of the liquid crystal display device are formed adjacent one another on the transparent substrate. The one electrode of the liquid crystal element and the one electrode of the non-single-crystal semiconductor diode, serving as the photo diode are both formed on the transparent substrate and are transparent. The one electrode of the non-single-crystal semiconductor diode serving as the non-linear element is also formed on the transparent first substrate but is nontransparent.

    摘要翻译： 公开了一种光电板，其中液晶装置和光检测装置形成在共同的透明基板上。 液晶显示装置包括至少一个液晶元件，该液晶元件经由用作非线性元件的非单晶半导体二极管和与非单晶体结构相同的光电二极管提供驱动信号 作为液晶显示装置的非线性元件的半导体二极管。 液晶显示装置和光检测装置并排设置在透明基板上。 作为液晶显示装置的非线性元件的液晶元件，非线性元件，非单晶元件和非单晶半导体二极管在透明基板上彼此相邻地形成 。 作为光电二极管的液晶元件的一个电极和非单晶半导体二极管的一个电极均形成在透明基板上并且是透明的。 用作非线性元件的非单晶半导体二极管的一个电极也形成在透明第一衬底上，但是不透明。