利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

76 条记录 (耗时 0.03 秒)

    Detection of molecular interactions using a field effect transistor
    71.
    发明申请
    Detection of molecular interactions using a field effect transistor 审中-公开
    使用场效应晶体管检测分子相互作用

    公开(公告)号：US20060197118A1

    公开(公告)日：2006-09-07

    申请号：US11377853

    申请日：2006-03-16

    申请人： Piero Migliorato ,  Pedro De Lemos Correia Estrela ,  Feng Yan

    发明人： Piero Migliorato ,  Pedro De Lemos Correia Estrela ,  Feng Yan

    IPC分类号： H01L23/58 ,  H01L21/00

    CPC分类号： G01N33/54373 ,  G01N27/4145

    摘要： A sensor for use in the detection of a molecular interaction comprises a field effect transistor (FET) having a core structure and an extended gate structure, the core structure and the extended gate structure being located on substantially separate regions of a substrate, the extended gate structure including an exposed metal sensor electrode on which probe molecules can be immobilized, wherein, in use, the sensor is operative to produce a change in an electrical characteristic of the FET in response to molecular interaction at the exposed surface of the metal sensor electrode. The sensor is particularly suitable for detecting biomolecular interactions such as the hybridization of DNA, when the sensor is prepared with suitable probe molecules immobilized on the exposed gate metal.

    摘要翻译： 用于检测分子相互作用的传感器包括具有芯结构和延伸栅极结构的场效应晶体管（FET），所述芯结构和延伸栅结构位于基板的基本上分离的区域上，延伸栅极 包括暴露的金属传感器电极，其上可以固定有探针分子，其中在使用中，传感器响应于在金属传感器电极的暴露表面处的分子相互作用而产生FET的电特性的变化。 当传感器与固定在暴露的栅极金属上的合适的探针分子一起制备传感器时，该传感器特别适用于检测生物分子相互作用，例如DNA的杂交。

    LED light
    72.
    外观设计
    LED light 有权

    公开(公告)号：USD1003465S1

    公开(公告)日：2023-10-31

    申请号：US29890665

    申请日：2023-04-26

    申请人： Feng Yan

    设计人： Feng Yan

    摘要： FIG. 1 is a perspective view of a LED light, showing my new design;
    FIG. 2 is a another perspective view thereof;
    FIG. 3 is a front elevational view thereof;
    FIG. 4 is a rear elevational view thereof;
    FIG. 5 is a left side elevational view thereof;
    FIG. 6 is a right side elevational view thereof;
    FIG. 7 is a top plan view thereof;
    FIG. 8 is a bottom plan view thereof; and,
    FIG. 9 is a perspective view of the LED light where the LED light is in a configuration of use.
    The broken lines in the drawings depict portions of the LED light that form no part of the claimed design.

    Photosensitive detector with composite dielectric gate MOSFET structure and its signal readout method
    74.
    发明授权
    Photosensitive detector with composite dielectric gate MOSFET structure and its signal readout method 有权
    具有复合介质栅MOSFET结构的感光探测器及其信号读出方法

    公开(公告)号：US08604409B2

    公开(公告)日：2013-12-10

    申请号：US13126079

    申请日：2010-02-10

    申请人： Feng Yan ,  Rong Zhang ,  Yi Shi ,  Lin Pu ,  Yue Xu ,  Fuwei Wu ,  Xiaofeng Bo ,  Haoguang Xia

    发明人： Feng Yan ,  Rong Zhang ,  Yi Shi ,  Lin Pu ,  Yue Xu ,  Fuwei Wu ,  Xiaofeng Bo ,  Haoguang Xia

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14643 ,  H01L27/14614 ,  H01L31/1136

    摘要： The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.

    摘要翻译： 本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧，以形成源极和漏极。 依次将基底电介质层，光电子存储层，顶部电介质层和控制栅极堆叠在基板上。 顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。 当光电子被收集并注入到要保持在其中的光电子储存层时，源极和漏极是浮置的。 存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。 本发明的检测器具有优异的可扩展性，与闪存制造技术的基本兼容性，低漏电流，比CCD更高的成像速度，对处理缺陷的灵敏度，对其他结构的动态范围更大，信号读出精度更高。

    Non-Invasive Glucose Sensor
    75.
    发明申请
    Non-Invasive Glucose Sensor 有权
    非侵入性葡萄糖传感器

    公开(公告)号：US20120247976A1

    公开(公告)日：2012-10-04

    申请号：US13075027

    申请日：2011-03-29

    申请人： Feng Yan ,  Helen L.W. Chan ,  Hao Tang

    发明人： Feng Yan ,  Helen L.W. Chan ,  Hao Tang

    IPC分类号： G01N33/50 ,  G01N27/327 ,  B05D5/12 ,  B82Y5/00 ,  B82Y99/00

    CPC分类号： G01N27/4145

    摘要： A non-invasive glucose sensor (10) for detecting an amount of glucose in bodily fluid, comprising: an organic electrochemical transistor (OECT) having a gate electrode (20); wherein a surface of the gate electrode (20) is modified with an enzyme and a nanomaterial to increase sensitivity and selectivity of the gate electrode (20).

    摘要翻译： 一种用于检测体液中葡萄糖量的非侵入式葡萄糖传感器（10），包括：具有栅电极（20）的有机电化学晶体管（OECT）; 其中所述栅电极（20）的表面用酶和纳米材料进行改性以提高所述栅电极（20）的灵敏度和选择性。

    COMPOUNDS THAT MAINTAIN PLURIPOTENCY OF EMBRYONIC STEM CELLS
    76.
    发明申请
    COMPOUNDS THAT MAINTAIN PLURIPOTENCY OF EMBRYONIC STEM CELLS 审中-公开
    维持胚胎干细胞群的化合物

    公开(公告)号：US20100234400A1

    公开(公告)日：2010-09-16

    申请号：US11917138

    申请日：2006-06-08

    申请人： Shuibing Chen ,  Sheng Ding ,  Feng Yan ,  Peter G. Schultz

    发明人： Shuibing Chen ,  Sheng Ding ,  Feng Yan ,  Peter G. Schultz

    IPC分类号： A61K31/519 ,  C12N5/071

    CPC分类号： C12N5/0606 ,  C07D487/04 ,  C12N2501/999

    摘要： The present invention relates to methods and compositions for culturing embryonic stem (ES) cells. The methods relate to growing the ES cells in the presence of small molecules of formula (I) that maintain the pluripotency/self-renewal of the cells without feeder cells and LIF in serum-free conditions. These methods in part facilitate much more consistency in embryonic stem cell production, providing, for example, new avenues in the practical applications of embryonic stem cells in regenerative medicine.

    摘要翻译： 本发明涉及用于培养胚胎干（ES）细胞的方法和组合物。 该方法涉及在存在不分泌饲养细胞且LIF在无血清条件下的细胞的多能性/自我更新的式（I）分子存在下生长ES细胞。 这些方法部分地促进了胚胎干细胞生产中更多的一致性，例如提供了胚胎干细胞在再生医学中的实际应用中的新途径。