Photosensitive Detector with Composite Dielectric Gate MOSFET Structure and Its Signal Readout Method
    1.
    发明申请
    Photosensitive Detector with Composite Dielectric Gate MOSFET Structure and Its Signal Readout Method 有权
    具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法

    公开(公告)号:US20110215227A1

    公开(公告)日:2011-09-08

    申请号:US13126079

    申请日:2010-02-10

    IPC分类号: H01L31/112 H03F3/08

    摘要: The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.

    摘要翻译: 本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧,以形成源极和漏极。 依次将基底电介质层,光电子存储层,顶部电介质层和控制栅极堆叠在基板上。 顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。 当光电子被收集并注入到要保持在其中的光电子储存层时,源极和漏极是浮置的。 存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。 本发明的检测器具有优异的可扩展性,与闪存制造技术的基本兼容性,低漏电流,比CCD更高的成像速度,对处理缺陷的灵敏度,对其他结构的动态范围更大,信号读出精度更高。

    Photosensitive detector with composite dielectric gate MOSFET structure and its signal readout method
    2.
    发明授权
    Photosensitive detector with composite dielectric gate MOSFET structure and its signal readout method 有权
    具有复合介质栅MOSFET结构的感光探测器及其信号读出方法

    公开(公告)号:US08604409B2

    公开(公告)日:2013-12-10

    申请号:US13126079

    申请日:2010-02-10

    IPC分类号: H01L31/00

    摘要: The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.

    摘要翻译: 本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧,以形成源极和漏极。 依次将基底电介质层,光电子存储层,顶部电介质层和控制栅极堆叠在基板上。 顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。 当光电子被收集并注入到要保持在其中的光电子储存层时,源极和漏极是浮置的。 存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。 本发明的检测器具有优异的可扩展性,与闪存制造技术的基本兼容性,低漏电流,比CCD更高的成像速度,对处理缺陷的灵敏度,对其他结构的动态范围更大,信号读出精度更高。

    Method for operating a high density multi-level cell non-volatile flash memory device
    3.
    发明授权
    Method for operating a high density multi-level cell non-volatile flash memory device 失效
    用于操作高密度多电平单元非易失性闪存器件的方法

    公开(公告)号:US08462556B1

    公开(公告)日:2013-06-11

    申请号:US13327586

    申请日:2011-12-15

    IPC分类号: G11C11/40 G11C16/04

    摘要: A localized trapping multi-level memory cell operating method includes the following steps. First, a localized trapping memory cell with the initial threshold voltage of approximately 2.5V is provided. Next, an erasing operation is performed to obtain a negative threshold level having uniform charge distribution along the channel region. Taking into account the over-erasure issue in the erasing operation, a programming operation is performed to precisely adjust the threshold voltage to a predetermined level of −2V to −1V. Then, with this negative voltage as a new initial state, a corresponding programming operation is performed and electrons are locally injected into the storage layer. By controlling the quantity of injected electrons, the MLC storage is achieved.

    摘要翻译: 本地化陷阱多级存储单元操作方法包括以下步骤。 首先,提供具有大约2.5V的初始阈值电压的局部捕获存储单元。 接下来,执行擦除操作以获得沿通道区域具有均匀电荷分布的负阈值电平。 考虑到擦除操作中的过度擦除问题,执行编程操作以将阈值电压精确地调节到-2V至-1V的预定电平。 然后,利用该负电压作为新的初始状态,执行相应的编程操作,并将电子局部地注入存储层。 通过控制注入电子的数量,实现了MLC存储。

    LED light
    4.
    外观设计

    公开(公告)号:USD1003497S1

    公开(公告)日:2023-10-31

    申请号:US29890660

    申请日:2023-04-26

    申请人: Feng Yan

    设计人: Feng Yan

    摘要: FIG. 1 is a perspective view of a LED light, showing my new design;
    FIG. 2 is a another perspective view thereof;
    FIG. 3 is a front elevational view thereof;
    FIG. 4 is a rear elevational view thereof;
    FIG. 5 is a left side elevational view thereof;
    FIG. 6 is a right side elevational view thereof;
    FIG. 7 is a top plan view thereof;
    FIG. 8 is a bottom plan view thereof; and,
    FIG. 9 is an enlarged view of portion 9 shown in FIG. 1.
    The dash-dash broken lines in the drawings depict portions of the LED light that form no part of the claimed design. The dot-dash broken lines in the drawings denote the boundaries of the enlarged detail view and form no part of the claimed design.

    Camera
    5.
    外观设计
    Camera 有权

    公开(公告)号:USD980894S1

    公开(公告)日:2023-03-14

    申请号:US29790265

    申请日:2021-11-16

    申请人: Feng Yan

    设计人: Feng Yan

    Gas-filled microvesicles with polymer-modified lipids
    6.
    发明授权
    Gas-filled microvesicles with polymer-modified lipids 有权
    具有聚合物改性脂质的充气微泡

    公开(公告)号:US09446156B2

    公开(公告)日:2016-09-20

    申请号:US12440009

    申请日:2007-09-04

    IPC分类号: A61K49/22 A61K49/18 A61K51/12

    摘要: Image enhancing contrast agents for use in diagnostic and/or therapeutic methods, particularly in the form of gas-filled microvesicles, with enhanced stability. The gas-filled microvesicles are stabilized by a layer of amphiphilic material and comprise from 0.15% to 1.0% by moles of a lipid bearing a hydrophilic polymer. The lipid bearing a hydrophilic polymer is preferably a phospholipid linked to polyethyleneglycol.

    摘要翻译: 用于诊断和/或治疗方法的图像增强造影剂,特别是以气体填充的微泡的形式,具有增强的稳定性。 气体填充的微泡由一层两亲性材料稳定,并含有0.15%至1.0%(摩尔)含有亲水性聚合物的脂质。 含有亲水性聚合物的脂质优选为与聚乙二醇连接的磷脂。

    Detection of immobilized contrast agent in medical imaging applications based on flow dynamics analysis
    7.
    发明授权
    Detection of immobilized contrast agent in medical imaging applications based on flow dynamics analysis 有权
    基于流动动力学分析的医学成像应用中固定化造影剂的检测

    公开(公告)号:US09198639B2

    公开(公告)日:2015-12-01

    申请号:US12084933

    申请日:2006-11-09

    摘要: A system for facilitating the detection of an immobilized contrast agent in medical imaging applications is proposed. The system includes means for providing a sequence of a total number of input images obtained at corresponding acquisition instants by imaging a body-part of a patient subjected to an administration of a contrast agent capable of circulating within the patient and of being substantially immobilized on a biological target, each input image including a plurality of input values each one indicative of a response to an interrogation signal of a corresponding portion of the body-part possibly including said contrast agent, and means for reducing a contribution of the circulating contrast agent within the body-part in at least one selected input image; the means for reducing includes means for creating a filtered image corresponding to each selected input image by replacing a set of input values of the selected input image with a set of corresponding filtered values, each filtered value being representative of the lowest response of the corresponding portion of the body-part in a set of multiple input images including the selected input image, the set of multiple input images consisting of a number of input images lower than the total number.

    摘要翻译: 提出了一种便于在医学成像应用中检测固定的造影剂的系统。 该系统包括用于提供在对应的获取时刻获得的输入图像的总数的序列的装置,其通过对经受施用能够在患者内循环的造影剂并且基本上固定在患者身上的患者的体部成像 每个输入图像包括多个输入值,每个输入值指示对可能包括所述造影剂的身体部分的对应部分的询问信号的响应;以及用于减少循环造影剂在所述生物靶内的贡献的装置 至少一个所选输入图像中的身体部分; 用于减少的装置包括用于通过用一组相应的滤波值替换所选择的输入图像的一组输入值来创建与每个所选择的输入图像相对应的滤波图像的装置,每个滤波值代表相应部分的最低响应 包括所选择的输入图像的一组多个输入图像中的身体部分的多个输入图像组合,所述多个输入图像由少于总数的多个输入图像组成。

    Inductance measuring device and method for measuring an inductance parameter of permanent motor
    8.
    发明授权
    Inductance measuring device and method for measuring an inductance parameter of permanent motor 有权
    电感测量装置及永磁电机电感参数测量方法

    公开(公告)号:US09081065B2

    公开(公告)日:2015-07-14

    申请号:US13559599

    申请日:2012-07-27

    申请人: Feng Yan Cheng Lu

    发明人: Feng Yan Cheng Lu

    IPC分类号: G06F19/00 G01R31/34

    CPC分类号: G01R31/34

    摘要: The present disclosure provides an inductance parameter measuring device of the permanent motor and the method thereof. The method includes: providing a d-axis given current signal and a q-axis given current signal; converting the d-axis given current signal and the q-axis given current signal to a three-phase command signal and outputting a motor control signal corresponding to the three-phase command signal, and obtaining a three-phase feedback signal, from which a d-axis feedback signal and a q-axis feedback signal is generated, based on the motor control signal; calculating a d-axis inductance and a q-axis inductance based on the first, second, third and fourth response signals when the permanent motor is in a stationary state, wherein the first, second, third and fourth response signals are respectively corresponded to the d-axis given current signal, the q-axis given current signal, the d-axis feedback signal and the q-axis feedback signal.

    摘要翻译: 本公开提供了永磁电机的电感参数测量装置及其方法。 该方法包括:提供d轴给定电流信号和q轴给定电流信号; 将d轴给定电流信号和q轴给定电流信号转换为三相指令信号,并输出与三相指令信号对应的电机控制信号,并获得三相反馈信号, 基于电机控制信号生成d轴反馈信号和q轴反馈信号; 当永久电动机处于静止状态时,基于第一,第二,第三和第四响应信号计算d轴电感和q轴电感,其中第一,第二,第三和第四响应信号分别对应于 d轴给定电流信号,q轴给定电流信号,d轴反馈信号和q轴反馈信号。

    Three-dimensional multi-bit non-volatile memory and method for manufacturing the same
    9.
    发明授权
    Three-dimensional multi-bit non-volatile memory and method for manufacturing the same 有权
    三维多位非易失性存储器及其制造方法

    公开(公告)号:US08705274B2

    公开(公告)日:2014-04-22

    申请号:US13376925

    申请日:2011-06-30

    IPC分类号: G11C16/04 H01L21/336

    CPC分类号: H01L27/11582

    摘要: The present disclosure relates to the field of microelectronics manufacture and memories. A three-dimensional multi-bit non-volatile memory and a method for manufacturing the same are disclosed. The memory comprises a plurality of memory cells constituting a memory array. The memory array may comprise: a gate stack structure; periodically and alternately arranged gate stack regions and channel region spaces; gate dielectric layers for discrete charge storage; periodically arranged channel regions; source doping regions and drain doping regions symmetrically arranged to each other; bit lines led from the source doping regions and the drain doping regions; and word lines led from the gate stack regions. The gate dielectric layers for discrete charge storage can provide physical storage spots to achieve single-bit or multi-bit operations, so as to achieve a high storage density. According to the present disclosure, the localized charge storage characteristic of the charge trapping layer and characteristics such as a longer effective channel length and a higher density of a vertical memory structure are utilized, to provide multiple storage spots in a single memory cell. Therefore, the storage density is improved while good performances such as high speed are ensured.

    摘要翻译: 本公开涉及微电子制造领域和存储器。 公开了一种三维多位非易失性存储器及其制造方法。 存储器包括构成存储器阵列的多个存储单元。 存储器阵列可以包括:栅极堆叠结构; 定期和交替布置的栅极堆叠区域和沟道区域空间; 用于离散电荷存储的栅极电介质层; 定期布置的通道区域; 源极掺杂区域和漏极掺杂区域彼此对称布置; 源极掺杂区域和漏极掺杂区域引出的位线; 和从栅极堆栈区域引出的字线。 用于离散电荷存储的栅极电介质层可以提供物理存储点以实现单位或多位操作,从而实现高存储密度。 根据本公开,利用电荷俘获层的局部电荷存储特性以及垂直存储器结构的较长有效沟道长度和较高密度等特征,以在单个存储单元中提供多个存储点。 因此,存储密度得到改善,同时保证了诸如高速的良好性能。