Semiconductor device and method of manufacturing the same
    71.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US06807082B2

    公开(公告)日:2004-10-19

    申请号:US10282013

    申请日:2002-10-29

    IPC分类号: G11C1122

    摘要: A stacked FeRAM uses a structure where the bit line is formed above the ferroelectric capacitor. The word line is formed so that it moves away from the opposing other word line in areas near the contact plug with the relevant contact plug in between, and moves toward the other word line in areas not near the contact plug, and the contact hole is formed so that it is displaced alternately with respect to the longitudinal centerline of the relevant plate line.

    摘要翻译: 堆叠的FeRAM使用在铁电电容器上方形成位线的结构。 字线被形成为使得其在与接触插塞附近的区域中相对的另一个字线移动,并且相对于接触插头在其之间移动,并且接触孔是 形成为相对于相关板线的纵向中心线交替排列。

    Gas discharge panel and gas light-emitting device
    72.
    发明授权
    Gas discharge panel and gas light-emitting device 失效
    气体放电面板和气体发光装置

    公开(公告)号:US06291943B1

    公开(公告)日:2001-09-18

    申请号:US09254886

    申请日:1999-06-04

    IPC分类号: H01J1312

    CPC分类号: H01J11/12 H01J11/14 H01J11/50

    摘要: The object of the present invention is to provide a gas discharge panel, where the conversion efficiency of discharge energy into visible rays and the panel brightness are improved, with the color purity being improved as far as possible. To achieve this object, in a gas discharge panel, the pressure of discharge gas is set in a range of 800-4000 Torr, that is higher than a conventional gas pressure. Also, a rare gas mixture including helium, neon, xenon, and argon is used as discharge gas charged into discharge spaces, instead of conventional discharge gas. Here, it is preferable that the proportion of Xe is set to 5% by volume or less, that of Ar 0.5% by volume or less, and that of He under 55% by volume. With this rare gas mixture, the light-emission efficiency is improved, with the firing voltage being suppressed. Furthermore, display electrodes and address electrodes are arranged on the surface of either of a front cover plate and a back plate, with a dielectric layer existing between the display electrodes and the address electrodes. With this construction, addressing is performed with a relatively low voltage even if the gas pressure is high.

    摘要翻译: 本发明的目的是提供一种气体放电面板,其中放电能量转换成可见光的转换效率和面板亮度得到改善,色纯度尽可能地得到改善。 为了达到这个目的,在气体放电面板中,放电气体的压力设定在比常规气体压力高的800-4000乇的范围内。 此外,使用包含氦,氖,氙和氩的稀有气体混合物作为放电气体,而不是传统的放电气体。 这里,优选Xe的比例为5体积%以下,Ar为0.5体积%以下,He为55体积%以下。 利用这种稀有气体混合物,随着点火电压的抑制,发光效率提高。 此外,显示电极和寻址电极布置在前盖板和背板之一的表面上,在显示电极和寻址电极之间存在电介质层。 利用这种结构,即使气体压力高,也以相对低的电压进行寻址。

    Production method of plasma display panel suitable for minute cell
structure, the plasma panel, and apparatus for displaying the plasma
display panel
    74.
    发明授权
    Production method of plasma display panel suitable for minute cell structure, the plasma panel, and apparatus for displaying the plasma display panel 失效
    适用于微小电池结构的等离子体显示面板的制造方法,等离子体面板以及显示等离子体显示面板的装置

    公开(公告)号:US5951350A

    公开(公告)日:1999-09-14

    申请号:US932508

    申请日:1997-09-18

    IPC分类号: H01J9/227 H01J17/49

    摘要: The present invention aims to provide a method of producing a plasma display panel in which the fluorescent substance layer or the reflection layer is formed easily and accurately even for a minute cell structure, and in which the fluorescent substance layer or the reflection layer is formed evenly in the channels between the partition walls formed in stripes, or such a layer is formed also on the sides of the partition walls. To achieve this purpose, a fluorescent substance layer or a reflection layer is formed by applying a fluorescent substance ink or a reflection material ink continuously onto the channels, the ink being spouted out from a nozzle which runs along the partition walls. The nozzle may be directed to one side of the plurality of partition walls while running. Pressure may be put upon the ink having been applied onto the channels so that the ink sticks to both sides of the partition walls. The ink may be continuously spouted out from a nozzle while a bridge is formed between the nozzle and both sides of the partition walls by surface tension of the ink. A plate with a plurality of partition walls and channels in between may be formed so that adsorption of the sides of the channels against the ink is higher than that of the bottom of the channels.

    摘要翻译: 本发明的目的在于提供等离子体显示面板的制造方法,其中即使对于微小电池结构也容易且准确地形成荧光物质层或反射层,并且其中均匀地形成荧光物质层或反射层 在形成为条纹的隔壁之间的通道中,或者也在隔壁的侧面上形成这样的层。 为了达到这个目的,通过将荧光物质油墨或反射材料油墨连续施加到通道上形成荧光物质层或反射层,油墨从沿着分隔壁延伸的喷嘴喷出。 喷嘴可以在运行时被引导到多个分隔壁的一侧。 可以将压力施加到已经施加到通道上的油墨上,使得油墨粘附在分隔壁的两侧。 油墨可以从喷嘴连续地喷出,同时通过油墨的表面张力在分隔壁的喷嘴和两侧之间形成桥。 可以形成具有多个间隔壁和槽之间的通道的板,使得通道的侧面对油墨的吸附高于通道底部的吸附。

    Method of manufacturing molds for molding optical glass elements and
diffraction gratings
    75.
    发明授权
    Method of manufacturing molds for molding optical glass elements and diffraction gratings 失效
    制造用于模制光学玻璃元件和衍射光栅的模具的方法

    公开(公告)号:US4842633A

    公开(公告)日:1989-06-27

    申请号:US235301

    申请日:1988-08-23

    IPC分类号: B22F5/00 C03B11/08

    摘要: A base material excellent in heat resistance and high-temperature strength is processed into a desired configuration. The processed base material is coated with a heat-resistant film having excellent strength at high temperatures and low reactivity with a glass material to be molded. A resist is applied on the heat resistant film and a desired pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. Or if a mold having deep unevenness of the pressing surface is required, the resist is applied after an intermediate layer which permits selective etching is formed on the heat resistant film, and the required pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. The intermediate layer is removed by wet etching or dry etching to emphasize unevenness of the mask. The resist film or the resist film and intermediate layer film are completely removed and a part of the heat-resistant film is removed to obtain a mold having the desired configuration of the molding surface.

    摘要翻译: 将耐热性和耐高温性优异的基材加工成所希望的结构。 加工后的基材在高温下具有优异的强度和与待成型的玻璃材料的反应性低的耐热膜。 将抗蚀剂施加在耐热膜上,并且通过电子束,离子束,全息曝光或普通光刻法将期望的图案拉到其上。 或者如果需要具有挤压表面的深度不均匀的模具,则在耐热膜上形成允许选择性蚀刻的中间层之后施加抗蚀剂,并且通过电子束,离子束, 全息曝光或普通光刻。 通过湿蚀刻或干蚀刻去除中间层,以强调掩模的不均匀性。 完全除去抗蚀剂膜或抗蚀膜和中间层膜,除去一部分耐热膜,得到具有所需成型面的模具。

    Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device
    79.
    发明申请
    Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device 有权
    磁存储器件,磁存储器件的写入方法和读取磁存储器件的方法

    公开(公告)号:US20070258283A1

    公开(公告)日:2007-11-08

    申请号:US11812294

    申请日:2007-06-18

    申请人: Masaki Aoki

    发明人: Masaki Aoki

    IPC分类号: G11C11/00

    摘要: The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.

    摘要翻译: 磁存储器件包括:包括彼此串联连接的两个磁阻效应元件的存储单元,以及连接到两个磁阻器件之间的连接节点的选择晶体管,连接到磁阻效应元件的连接节点的位线 选择晶体管和用于读取存储在磁阻效应元件中的信息的读取电路,基于输出到位线的连接节点的电压。

    Magnetic memory device and method for reading the same
    80.
    发明申请
    Magnetic memory device and method for reading the same 有权
    磁记忆装置及其读取方法

    公开(公告)号:US20070247943A1

    公开(公告)日:2007-10-25

    申请号:US11808967

    申请日:2007-06-14

    IPC分类号: G11C7/02

    CPC分类号: G11C11/16

    摘要: A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.

    摘要翻译: 磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处,并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ,以及连接到磁阻效应元件MTJ的选择晶体管Tr,磁阻效应元件MC具有 一个端子连接到位线BL,另一个端子经由选择晶体管连接到第一信号线GND; 设置在相应的多个位线BL上的虚设单元DC,并且每个包括具有恒定电阻值的电阻元件R,该电阻元件具有连接到位线BL的一个端子和连接到第二信号线SIG < SUB> D 以及连接到多个位线BL的电压检测放大器SA。