摘要:
A stacked FeRAM uses a structure where the bit line is formed above the ferroelectric capacitor. The word line is formed so that it moves away from the opposing other word line in areas near the contact plug with the relevant contact plug in between, and moves toward the other word line in areas not near the contact plug, and the contact hole is formed so that it is displaced alternately with respect to the longitudinal centerline of the relevant plate line.
摘要:
The object of the present invention is to provide a gas discharge panel, where the conversion efficiency of discharge energy into visible rays and the panel brightness are improved, with the color purity being improved as far as possible. To achieve this object, in a gas discharge panel, the pressure of discharge gas is set in a range of 800-4000 Torr, that is higher than a conventional gas pressure. Also, a rare gas mixture including helium, neon, xenon, and argon is used as discharge gas charged into discharge spaces, instead of conventional discharge gas. Here, it is preferable that the proportion of Xe is set to 5% by volume or less, that of Ar 0.5% by volume or less, and that of He under 55% by volume. With this rare gas mixture, the light-emission efficiency is improved, with the firing voltage being suppressed. Furthermore, display electrodes and address electrodes are arranged on the surface of either of a front cover plate and a back plate, with a dielectric layer existing between the display electrodes and the address electrodes. With this construction, addressing is performed with a relatively low voltage even if the gas pressure is high.
摘要:
The source region and gate electrode of a field effect transistor including a drain region and a gate electrode in addition to the source region are connected by a first ferroelectric capacitor. The drain region and gate electrode are connected by a second ferroelectric capacitor. A ferroelectric memory device suitable for high integration is provided.
摘要:
The present invention aims to provide a method of producing a plasma display panel in which the fluorescent substance layer or the reflection layer is formed easily and accurately even for a minute cell structure, and in which the fluorescent substance layer or the reflection layer is formed evenly in the channels between the partition walls formed in stripes, or such a layer is formed also on the sides of the partition walls. To achieve this purpose, a fluorescent substance layer or a reflection layer is formed by applying a fluorescent substance ink or a reflection material ink continuously onto the channels, the ink being spouted out from a nozzle which runs along the partition walls. The nozzle may be directed to one side of the plurality of partition walls while running. Pressure may be put upon the ink having been applied onto the channels so that the ink sticks to both sides of the partition walls. The ink may be continuously spouted out from a nozzle while a bridge is formed between the nozzle and both sides of the partition walls by surface tension of the ink. A plate with a plurality of partition walls and channels in between may be formed so that adsorption of the sides of the channels against the ink is higher than that of the bottom of the channels.
摘要:
A base material excellent in heat resistance and high-temperature strength is processed into a desired configuration. The processed base material is coated with a heat-resistant film having excellent strength at high temperatures and low reactivity with a glass material to be molded. A resist is applied on the heat resistant film and a desired pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. Or if a mold having deep unevenness of the pressing surface is required, the resist is applied after an intermediate layer which permits selective etching is formed on the heat resistant film, and the required pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. The intermediate layer is removed by wet etching or dry etching to emphasize unevenness of the mask. The resist film or the resist film and intermediate layer film are completely removed and a part of the heat-resistant film is removed to obtain a mold having the desired configuration of the molding surface.
摘要:
An iron-aluminum-silicon (Fe-Al-Si) series magnetic alloy magnetic head is described. The magnetic head is filled between front gap forming surfaces (the front gap facing a magnetic tape) of a pair of Fe-Al-Si core pieces with non-magnetic ceramic films formed on the respective front gap forming surfaces and a glass film formed therebetween, and between rear gap forming surfaces for junction with an Ag-Cu-In series alloy film.
摘要:
A mold for press-molding glass elements comprising a base member made of a super hard alloy or a cermet; at least one intermediate layer made of a nitride, a carbide, an oxide or a metal, provided on the base member; and a noble metal layer provided on the intermediate layer for forming a mold surface. An active metal contained in the base member is prevented from diffusing to the mold surface by the presence of the intermediate layer.
摘要:
A cantilever for a pickup cartridge comprising a base in the form of a solid rod or a pipe coated with a layer of a substance exhibiting a high modulus of elasticity ratio higher than 5000 Kg/mm.sup.2. The substance is for example boron or a boride.
摘要翻译:一种用于拾取盒的悬臂,其包括实心棒状的基部或涂覆有显示高于5000Kg / mm 2的高弹性模量比的物质层的管。 该物质例如是硼或硼化物。
摘要:
The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.
摘要:
A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.
摘要翻译:磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处,并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ,以及连接到磁阻效应元件MTJ的选择晶体管Tr,磁阻效应元件MC具有 一个端子连接到位线BL,另一个端子经由选择晶体管连接到第一信号线GND; 设置在相应的多个位线BL上的虚设单元DC,并且每个包括具有恒定电阻值的电阻元件R,该电阻元件具有连接到位线BL的一个端子和连接到第二信号线SIG < SUB> D SUB> 以及连接到多个位线BL的电压检测放大器SA。