MULTIPLE IRRADIATION EFFECT-CORRECTED DOSE DETERMINATION TECHNIQUE FOR CHARGED PARTICLE BEAM LITHOGRAPHY
    71.
    发明申请
    MULTIPLE IRRADIATION EFFECT-CORRECTED DOSE DETERMINATION TECHNIQUE FOR CHARGED PARTICLE BEAM LITHOGRAPHY 有权
    多重辐射效应校正剂量测定技术,用于充电粒子束光刻

    公开(公告)号:US20070187624A1

    公开(公告)日:2007-08-16

    申请号:US11671789

    申请日:2007-02-06

    IPC分类号: G21K5/10

    摘要: A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.

    摘要翻译: 带电粒子束微光刻设备通常由图案写入单元和系统控制器组成。 作者具有电子束源和用于在工件上形成图案图像的图案发生器。 系统控制器包括用于在模式写入期间发生的用于校正接近度和起雾效果的单元。 该单元具有用于计算接近效应校正剂量的第一计算器,用于计算雾化校正剂量的功能模块,同时在其中包括邻近效应的影响,以及用于将计算的剂量组合在一起以确定总校正的乘数 剂量。 该模块具有第二计算器,用于计算表示在雾化校正期间考虑的邻近效应影响的可变实数值;以及第三计算器,用于使用该值计算雾化校正剂量。

    BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS
    72.
    发明申请
    BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS 有权
    光束剂量计算方法和书写方法和记录载体体系和书写装置

    公开(公告)号:US20070114453A1

    公开(公告)日:2007-05-24

    申请号:US11460848

    申请日:2006-07-28

    IPC分类号: A61N5/00

    摘要: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

    摘要翻译: 光束剂量计算方法包括:从目标对象的表面区域划分出区域的行和列的矩阵,以包括不同大小的第一,第二和第三区域,第三区域的尺寸小于第一和第二区域 确定用于校正所述第一区域中的雾化效应的带电粒子束的第一校正剂量,确定用于校正由于所述第二区域中的负载效应而导致的图案线宽度偏差的校正大小值,使用所述第二区域中的所述校正大小值来创建 使用所述校正的大小值,在所述第二区域的各个区域中的所述光束的基本剂量的映射,以使用所述映射来确定所述第二区域中的相应的所述第二区域中的邻近效应校正系数的映射,以确定所述光束的第二校正剂量 校正所述第三区域中的邻近效应,并且使用第一和第二校正剂量来确定实际波束d 在所述对象的表面上的每个位置上。

    Magnetic resonance imaging system and contrast-enhanced angiography
    73.
    发明申请
    Magnetic resonance imaging system and contrast-enhanced angiography 失效
    磁共振成像系统和对比度增强血管造影

    公开(公告)号:US20070078333A1

    公开(公告)日:2007-04-05

    申请号:US10575159

    申请日:2004-10-05

    IPC分类号: A61B5/05

    CPC分类号: G01R33/5601

    摘要: An MRI system is realized which can always take an image under optimum conditions following the concentration of a contrast agent injected into a body and changed at every moment with time in the body, thereby obtaining a blood vessel image with higher quality even in a zone of a measurement period other than the time when the concentration of the injected contrast agent is peaked. A flip angle is changed following a contrast agent concentration b(t) as indicated by a curve 102. During a period Da in which the contrast agent concentration b(t) is gradually increased, a flip angle FA is increased following the contrast agent concentration b(t). During a period Db in which the contrast agent concentration b(t) is gradually decreased, the flip angle is gradually reduced. By controlling the flip angle following the contrast agent concentration b(t) so that the flip angle becomes an Ernst's angle at which signal intensity is maximized, the blood vessel image with higher quality can be obtained even in the zone of the measurement period other than the time when the concentration of the injected contrast agent is peaked.

    摘要翻译: 实现了一种MRI系统,其可以在注射到体内的造影剂浓度之后在最佳条件下拍摄图像,并且随着时间在身体中随时间而改变,从而获得更高质量的血管图像,即使在 除了注射的造影剂的浓度达到峰值之外的测量周期。 在如曲线102所示的造影剂浓度b(t)之后改变翻转角。 在造影剂浓度b(t)逐渐增加的期间Da中,在造影剂浓度b(t)之后翻转角FA增加。 在造影剂浓度b(t)逐渐降低的期间Db中,翻转角逐渐减小。 通过控制造影剂浓度b(t)之后的翻转角度,使翻转角成为信号强度最大化的Ernst角,即使在测量周期以外的区域也可以获得质量更高的血管图像 注射造影剂的浓度达到峰值的时间。

    Exposure method utilizing partial exposure stitch area
    74.
    发明授权
    Exposure method utilizing partial exposure stitch area 失效
    曝光方法采用部分曝光针迹区域

    公开(公告)号:US06333138B1

    公开(公告)日:2001-12-25

    申请号:US09520631

    申请日:2000-03-07

    IPC分类号: G03C500

    摘要: An exposure method of sequential beam, contributing to the improvement of alignment accuracy at connecting portion at the end part of an exposure region, as well as pattern dimension accuracy is provided. The method comprises the steps of dividing an area to be exposed into a plurality of fields each being determined by the deflection width of the main deflector, dividing each field into a plurality of sub-fields each being determined by the deflection width of the sub-deflector, applying a sequential exposure process to each field by using a variable shaped electron beam, and applying a multiple exposure process to an area where adjacent fields overlap each other, wherein the multiple exposure process is conducted in the area in units of sub-field, the exposure dose at each of exposure unit is determined such that the total exposure dosage in the area subject to the multiple exposure process is set equal to an exposure dosage used when single exposure process is applied, the exposure dosage in the area subject to multiple exposure process is decreased in steps, in the direction perpendicular to the longitudinal direction of the boundary portion from the outer edge of the field towards the outside of the field, an exposure dosage in the area subject to the multiple exposure process is determined using the minimum exposure dosage available in the exposure apparatus as the lower limit.

    摘要翻译: 提供顺序光束的曝光方法,有助于提高曝光区域的端部的连接部分的对准精度以及图案尺寸精度。 该方法包括以下步骤:将要暴露的区域划分为多个场,每个场由主偏转器的偏转宽度确定,将每个场分成多个子场,每个子场由子场的偏转宽度确定, 偏转器,通过使用可变形的电子束对每个场施加顺序曝光处理,以及对相邻场相互重叠的区域施加多次曝光处理,其中在该区域中以子场为单位进行多次曝光处理 确定每个曝光单元的曝光剂量,使得经受多次曝光处理的区域中的总曝光剂量设定为等于施加单次曝光处理时使用的曝光剂量,在多个区域内的曝光剂量 曝光过程在从场的外边缘朝向与边界部分的纵向方向垂直的方向上逐步减小 使用曝光装置中可获得的最小曝光剂量作为下限来确定在多次曝光处理区域内的曝光剂量。

    Charged beam lithography system
    75.
    发明授权
    Charged beam lithography system 有权
    带电光束光刻系统

    公开(公告)号:US06313476B1

    公开(公告)日:2001-11-06

    申请号:US09459648

    申请日:1999-12-13

    IPC分类号: A61N500

    摘要: A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes. Thus, the charged beam lithography system is designed to shift a divided form of the whole written region using the stripes at each wiring number of times, by a predetermined distance from a predetermined reference position in a direction perpendicular to a stage continuous moving direction, while selectively extracting the optimum dosage data from the cash memory so as to correspond to each of written stripes at each writing number of times, to write patterns. During the writing operation, the optimum dosage data corresponding to the next region to be written are transferred from the real time proximity effect correcting circuit to the cash memory, and the real time proximity effect correcting circuit calculates optimum dosages for the stripes corresponding to regions to be written after next and thereafter.

    摘要翻译: 带电束光刻系统包括用于产生带电束的带电粒子枪,用于偏转由带电粒子枪产生的带电束的主偏转系统和副偏转系统以及控制计算机。 带电光束光刻系统被设计成在连续移动平台的同时使来自带电粒子枪的带电束照射衬底的表面,以便为由主体的最大偏转宽度限定的条纹写入期望的图案 偏转系统和副偏转系统。 带电光束光刻系统还包括:实时邻近效应校正电路,用于通过根据邻近效应的影响校正电子束的剂量来计算每个条纹的最佳剂量; 以及用于存储至少两个条纹的最佳剂量数据的现金存储器。 因此,带电光束光刻系统被设计成使用每个布线次数的条纹将整个写入区域的分割形式沿垂直于平台连续移动方向的预定基准位置移动预定距离,同时 从现金存储器中选择性地提取最佳剂量数据,以便在每次写入次数时对应于每个写入条带,以写入模式。 在写入操作期间,对应于要写入的下一区域的最佳剂量数据从实时邻近效应校正电路传送到现金存储器,并且实时邻近效应校正电路针对与区域对应的条纹计算最佳剂量 写在下一个和之后。

    Electron beam lithographic method and apparatus
    78.
    发明授权
    Electron beam lithographic method and apparatus 失效
    电子束光刻方法和装置

    公开(公告)号:US5451487A

    公开(公告)日:1995-09-19

    申请号:US209360

    申请日:1994-03-14

    摘要: In an electron beam lithographic method including a correction radiation step based on the ghost method, the entire correction region is divided into small regions, each having a size smaller than a spread of backscattering of an electron beam and larger than a minimum figure which can be drawn. Representative figures are set, as radiation unit figures in the respective small regions, to be smaller in number than the number of times of radiation to be performed when the desired patterns in the small regions are drawn as black/white-inverted patterns. Exposure dose are set for the representative figures in the respective small regions. The electron beam is defocused to increase a beam size to a size roughly coinciding with the spread of backscattering, and the representative figures in the respective small regions are drawn with the set exposure dose.

    摘要翻译: 在包括基于重影法的校正辐射步骤的电子束光刻方法中,整个校正区域被划分为小的区域,每个区域的尺寸小于电子束的后向散射的扩展,并且大于可以是 画。 当各小区域中的辐射单元图形数量小于将小区域中的期望图案绘制为黑/白反转图案时要执行的辐射次数,则设置代表性图形。 对各小区域的代表性数字设定曝光剂量。 电子束散焦以将光束尺寸增加到与后向散射的扩展大致一致的尺寸,并且以设定的曝光剂量绘制各个小区域中的代表性图形。

    Charged particle litography method and apparatus
    79.
    发明授权
    Charged particle litography method and apparatus 失效
    带电粒子方法和装置

    公开(公告)号:US5305225A

    公开(公告)日:1994-04-19

    申请号:US876426

    申请日:1992-04-30

    CPC分类号: H01J37/3026

    摘要: In an electron beam lithography method which irradiates a sample with an electron beam to draw a desired pattern on the sample, figure data representing the shape of an elemental figure, placement data representing placement information of the figure data, and dose data representing dose for each of areas which are obtained by dividing a drawing area which are smaller than the broadening of backscattering of an electron beam are independently stored in a memory as drawing data. On the basis of the drawing data, the figure data is divided into unit figures each of which has a predetermined shape and is smaller than a predetermined size. A represented point of each unit figure is calculated, a dose of an electron beam is obtained from the data set for an area in which the represented point is present, and the quantity of radiation is determined as dose for the unit figure.

    摘要翻译: 在用电子束照射样品以在样品上画出所需图案的电子束光刻方法中,表示基本数字形状的图形数据,表示图形数据的放置信息的放置数据和表示每个 通过划分比电子束的后向散射加宽的绘制区域获得的区域被独立地存储在作为绘图数据的存储器中。 基于图形数据,图形数据被划分为各自具有预定形状且小于预定尺寸的单位图形。 计算每个单位图的表示点,从存在表示点的区域的数据集中获得电子束的剂量,并且将辐射量确定为单位图的剂量。

    Finely pulverized component added in vehicle spray washing water and
apparatus for recovering thereof
    80.
    发明授权
    Finely pulverized component added in vehicle spray washing water and apparatus for recovering thereof 失效
    在车辆喷雾洗涤水中加入微粉碎的组分和用于回收的装置

    公开(公告)号:US4977912A

    公开(公告)日:1990-12-18

    申请号:US347120

    申请日:1989-05-04

    IPC分类号: B60S3/04

    CPC分类号: B60S3/04

    摘要: A finely pulverized component added in vehicle spray washing water and acting to remove dirt which ordinarily tend to be left on a car surface when washing the car by applying dynamic water spray, and a vehicle spray washing system using the spray washing water containing detergent and the finely pulverized component, including a device for clarifying waste washing water and a device for recovering the finely pulverized component from the waste washing water to return the same to water to be sprayed.

    摘要翻译: 加入车辆喷淋洗涤水中的细粉碎成分,并且通过施加动态喷水剂来清洗通常倾向于留在车辆表面上的污垢,以及使用含有洗涤剂的喷淋洗涤剂和 细粉碎部件,包括用于澄清废水清洗水的装置和用于从废洗涤水中回收细粉碎部件的装置,将其返回到待喷雾的水中。