摘要:
A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.
摘要:
A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.
摘要:
An MRI system is realized which can always take an image under optimum conditions following the concentration of a contrast agent injected into a body and changed at every moment with time in the body, thereby obtaining a blood vessel image with higher quality even in a zone of a measurement period other than the time when the concentration of the injected contrast agent is peaked. A flip angle is changed following a contrast agent concentration b(t) as indicated by a curve 102. During a period Da in which the contrast agent concentration b(t) is gradually increased, a flip angle FA is increased following the contrast agent concentration b(t). During a period Db in which the contrast agent concentration b(t) is gradually decreased, the flip angle is gradually reduced. By controlling the flip angle following the contrast agent concentration b(t) so that the flip angle becomes an Ernst's angle at which signal intensity is maximized, the blood vessel image with higher quality can be obtained even in the zone of the measurement period other than the time when the concentration of the injected contrast agent is peaked.
摘要:
An exposure method of sequential beam, contributing to the improvement of alignment accuracy at connecting portion at the end part of an exposure region, as well as pattern dimension accuracy is provided. The method comprises the steps of dividing an area to be exposed into a plurality of fields each being determined by the deflection width of the main deflector, dividing each field into a plurality of sub-fields each being determined by the deflection width of the sub-deflector, applying a sequential exposure process to each field by using a variable shaped electron beam, and applying a multiple exposure process to an area where adjacent fields overlap each other, wherein the multiple exposure process is conducted in the area in units of sub-field, the exposure dose at each of exposure unit is determined such that the total exposure dosage in the area subject to the multiple exposure process is set equal to an exposure dosage used when single exposure process is applied, the exposure dosage in the area subject to multiple exposure process is decreased in steps, in the direction perpendicular to the longitudinal direction of the boundary portion from the outer edge of the field towards the outside of the field, an exposure dosage in the area subject to the multiple exposure process is determined using the minimum exposure dosage available in the exposure apparatus as the lower limit.
摘要:
A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes. Thus, the charged beam lithography system is designed to shift a divided form of the whole written region using the stripes at each wiring number of times, by a predetermined distance from a predetermined reference position in a direction perpendicular to a stage continuous moving direction, while selectively extracting the optimum dosage data from the cash memory so as to correspond to each of written stripes at each writing number of times, to write patterns. During the writing operation, the optimum dosage data corresponding to the next region to be written are transferred from the real time proximity effect correcting circuit to the cash memory, and the real time proximity effect correcting circuit calculates optimum dosages for the stripes corresponding to regions to be written after next and thereafter.
摘要:
An (R)-2-amino-1-phenylethanol derivative shown by the general formula (IIa) ##STR1## wherein R.sup.1 and R.sup.5 represent a hydrogen atom, etc.; R.sup.2, R.sup.3 and R.sup.4 independently represent a halogen atom, etc., or a salt thereof, can readily be produced (1) by permitting a microorganism belonging to the genus Rhodosporidium, the genus Comamonas or the like to act on a mixture of corresponding (R)-form and (S)-form to asymmetrically utilize, or (2) by permitting a microorganism belonging to the genus Lodderomyces, the genus Pilimelia or the like to act on a corresponding aminoketone derivative to asymmetrically reduce. An (R,R)-1-phenyl-2-�(2-phenyl-1-alkylethyl) amino!ethanol derivative having a high optical purity can easily be obtained from the compound of the formula (IIa) or a salt thereof. Said derivative is useful as an intermediate for producing an anti-obesity agent and so on.
摘要:
An (R)-2-amino-1-phenylethanol derivative shown by the general formula (IIa) ##STR1## wherein R.sup.1 and R.sup.5 represent a hydrogen atom, etc.; R.sup.2, R.sup.3 and R.sup.4 independently represent a halogen atom, etc., or a salt thereof, can readily be produced (1) by permitting a microorganism to act on a mixture of corresponding (R)-form and (S)-form to asymmetrically utilize, or (2) by permitting a microorganism to act on a corresponding aminoketone derivative to asymmetrically reduce. An (R,R)-1-phenyl-2-[(2-phenyl-1-alkylethyl) amino]ethanol derivative having a high optical purity can easily be obtained from the compound of the formula (IIa) or a salt thereof. Said derivative is useful as an intermediate for producing an anti-obesity agent.
摘要:
In an electron beam lithographic method including a correction radiation step based on the ghost method, the entire correction region is divided into small regions, each having a size smaller than a spread of backscattering of an electron beam and larger than a minimum figure which can be drawn. Representative figures are set, as radiation unit figures in the respective small regions, to be smaller in number than the number of times of radiation to be performed when the desired patterns in the small regions are drawn as black/white-inverted patterns. Exposure dose are set for the representative figures in the respective small regions. The electron beam is defocused to increase a beam size to a size roughly coinciding with the spread of backscattering, and the representative figures in the respective small regions are drawn with the set exposure dose.
摘要:
In an electron beam lithography method which irradiates a sample with an electron beam to draw a desired pattern on the sample, figure data representing the shape of an elemental figure, placement data representing placement information of the figure data, and dose data representing dose for each of areas which are obtained by dividing a drawing area which are smaller than the broadening of backscattering of an electron beam are independently stored in a memory as drawing data. On the basis of the drawing data, the figure data is divided into unit figures each of which has a predetermined shape and is smaller than a predetermined size. A represented point of each unit figure is calculated, a dose of an electron beam is obtained from the data set for an area in which the represented point is present, and the quantity of radiation is determined as dose for the unit figure.
摘要:
A finely pulverized component added in vehicle spray washing water and acting to remove dirt which ordinarily tend to be left on a car surface when washing the car by applying dynamic water spray, and a vehicle spray washing system using the spray washing water containing detergent and the finely pulverized component, including a device for clarifying waste washing water and a device for recovering the finely pulverized component from the waste washing water to return the same to water to be sprayed.