公开(公告)号：US20050205885A1

公开(公告)日：2005-09-22

申请号：US11059648

申请日：2005-02-17

申请人： Youhei Nakagawa ,  Nobuhiko Hayashi ,  Keiichi Kuramoto ,  Mitsuaki Matsumoto ,  Hitoshi Hirano

发明人： Youhei Nakagawa ,  Nobuhiko Hayashi ,  Keiichi Kuramoto ,  Mitsuaki Matsumoto ,  Hitoshi Hirano

IPC分类号： G02B6/13 ,  G02B6/122 ,  G02B6/138 ,  H01L21/00 ,  H01L33/00

CPC分类号： G02B6/138

摘要： Disclosed herein is an optical waveguide comprising a core layer to be an optical waveguide region, an upper clad layer covering the core layer and a lower clad layer, characterized in that an ultraviolet control region for preventing ultraviolet light from entering is provided at any one location of under the lower clad layer, on an interface of the lower clad layer and the upper clad layer, and on the upper clad layer. And a method of fabricating this optical waveguide is also disclosed.

摘要翻译： 本文公开了一种光波导，其包括作为光波导区域的芯层，覆盖芯层的上覆层和下包层，其特征在于，在任何一个位置处设置用于防止紫外线进入的紫外线控制区域 在下包层的下面，在下包层和上包层的界面上，在上包层上。 并且还公开了制造该光波导的方法。

公开(公告)号：US20050106400A1

公开(公告)日：2005-05-19

申请号：US10952497

申请日：2004-09-29

申请人： Keiichi Kuramoto ,  Youhei Nakagawa ,  Mitsuaki Matsumoto ,  Nobuhiko Hayashi ,  Hitoshi Hirano

发明人： Keiichi Kuramoto ,  Youhei Nakagawa ,  Mitsuaki Matsumoto ,  Nobuhiko Hayashi ,  Hitoshi Hirano

IPC分类号： C03C17/28 ,  C08G77/20 ,  C08G77/58 ,  G02B1/04 ,  B32B27/00

CPC分类号： C08G77/20 ,  C03C17/28 ,  C08G77/58 ,  G02B1/04 ,  Y10T428/31663

摘要： An organometallic polymer material having a -M-O-M-bond (M is a metal atom) and containing a metal alkoxide having only one hydrolyzable group and/or a hydrolysate of the metal alkoxide and preferably further containing an organic acid anhydride and/or an organic acid.

摘要翻译： 具有-MOM键（M是金属原子）并且含有仅具有一个可水解基团的金属醇盐和/或金属醇盐的水解产物并且优选还含有机酸酐和/或有机酸的有机金属聚合物材料 。

公开(公告)号：US06713845B2

公开(公告)日：2004-03-30

申请号：US10084050

申请日：2002-02-28

申请人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

发明人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

IPC分类号： H01L2358

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. Thus, the nitride-based semiconductor layer is formed while forming the void on the recess portion of the mask layer when laterally grown on the mask layer, whereby strain of the laterally grown nitride-based semiconductor layer is so relaxed that the nitride-based semiconductor layer is improved in crystallinity. The underlayer is formed in a substantially flat shape, whereby no etching may be performed over a long time dissimilarly to a case of forming recess portions on an underlayer consisting of a nitride-based semiconductor or the like.

摘要翻译： 通过获得具有优异结晶度的氮化物系半导体层，而不进行长时间蚀刻工艺，可以获得元素特性优异的氮化物系半导体元件。 该氮化物系半导体元件包括具有凹部的掩模层，形成在下层的大致平坦的上表面上以部分地暴露下层的上表面，形成在底层的露出部分上的氮化物系半导体层 以及掩模层，同时在掩模层的凹部上形成空隙，以及形成在具有元件区域的氮化物基半导体层上的氮化物基半导体元件层。 因此，当在掩模层上横向生长时，在掩模层的凹部上形成空隙的同时形成氮化物基半导体层，由此横向生长的氮化物基半导体层的应变如此松弛，使得氮化物基半导体 层的结晶度提高。 底层形成为大致平坦的形状，由此与在由氮化物类半导体等构成的基底上形成凹部的情况不同，长时间不进行蚀刻。

公开(公告)号：US06624001B2

公开(公告)日：2003-09-23

申请号：US10244513

申请日：2002-09-17

申请人： Hiroki Ohbo ,  Nobuhiko Hayashi

发明人： Hiroki Ohbo ,  Nobuhiko Hayashi

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01L33/02 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173

摘要： An AlGaN buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, an MQW active layer, and a p-AlGaN cladding layer are formed in this order on a sapphire substrate. A ridge portion is formed in the p-AlGaN cladding layer, and a p-GaN cap layer is formed on an upper surface of the ridge portion. An n-AlGaN first regrown low-temperature buffer layer and an n-AlGaN current blocking layer are formed in this order on a flat portion and on side surfaces of the ridge portion in the p-AlGaN cladding layer. A p-AlGaN second regrown low-temperature buffer layer and a p-GaN contact layer are formed on the n-AlGaN current blocking layer and on the upper surface of the ridge portion.

公开(公告)号：US06534800B1

公开(公告)日：2003-03-18

申请号：US09666557

申请日：2000-09-21

申请人： Hiroki Ohbo ,  Nobuhiko Hayashi

发明人： Hiroki Ohbo ,  Nobuhiko Hayashi

IPC分类号： H01L3300

CPC分类号： B82Y20/00 ,  H01L33/02 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173

摘要： An AlGaN buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, an MQW active layer, and a p-AlGaN cladding layer are formed in this order on a sapphire substrate. A ridge portion is formed in the p-AlGaN cladding layer, and a p-GaN cap layer is formed on an upper surface of the ridge portion. An n-AlGaN first regrown low-temperature buffer layer and an n-AlGaN current blocking layer are formed in this order on a flat portion and on side surfaces of the ridge portion in the p-AlGaN cladding layer. A p-AlGaN second regrown low-temperature buffer layer and a p-GaN contact layer are formed on the n-AlGaN current blocking layer and on the upper surface of the ridge portion.

摘要翻译： 依次形成AlGaN缓冲层，未掺杂的GaN层，n-GaN接触层，n-InGaN抗裂层，n-AlGaN包层，MQW有源层和p-AlGaN包层 蓝宝石衬底。 在p-AlGaN包层中形成脊部，在该脊部的上表面形成有p-GaN覆盖层。 在p-AlGaN包层的平坦部分和脊部的侧表面上依次形成n-AlGaN第一再生长的低温缓冲层和n-AlGaN电流阻挡层。 在n-AlGaN电流阻挡层和脊部的上表面上形成p-AlGaN第二重新生长的低​​温缓冲层和p-GaN接触层。