DRAM INTERFACE MODE WITH INTERRUPTIBLE INTERNAL TRANSFER OPERATION

    公开(公告)号:US20220261361A1

    公开(公告)日:2022-08-18

    申请号:US17568645

    申请日:2022-01-04

    Applicant: Rambus Inc.

    Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory device is disclosed. The memory device includes an array of storage cells and command interface circuitry to receive an internal transfer command. In response to the internal transfer command, transfer logic reads data from a first portion of the array of storage cells, transfers the data as on-chip transfer data, and writes the on-chip transfer data to a second portion of the array of storage cells. In response to the command interface circuitry receiving an interrupt command, the transfer logic pauses the internal transfer operation, and carries out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

    MULTI-CYCLE WRITE LEVELING
    80.
    发明申请
    MULTI-CYCLE WRITE LEVELING 有权
    多循环写水平

    公开(公告)号:US20150162061A1

    公开(公告)日:2015-06-11

    申请号:US14325140

    申请日:2014-07-07

    Applicant: RAMBUS INC.

    Abstract: A memory controller includes logic to determine corresponding reference voltage values and delay values for one or more memory devices. The memory controller includes a command-address (CA) interface to send a command to a memory device to set a reference voltage value of the memory device to a test value, a data interface to write a data pattern to the memory device and read the data pattern from the memory device, and test reference voltage logic to perform a density check on at least a portion of the data pattern read from the memory device and determine whether the test value is a potential reference voltage value based on the density check. An operational reference voltage value selected from one or more potential reference voltage values may be used to determine a delay value.

    Abstract translation: 存储器控制器包括用于确定一个或多个存储器件的相应参考电压值和延迟值的逻辑。 存储器控制器包括命令地址(CA)接口,用于向存储器件发送命令以将存储器件的参考电压值设置为测试值,数据接口将数据模式写入存储器件并读取 来自存储器件的数据模式,以及测试参考电压逻辑,以对从存储器件读取的数据模式的至少一部分执行密度检查,并且基于密度检查确定测试值是否是潜在的参考电压值。 可以使用从一个或多个潜在参考电压值中选择的操作参考电压值来确定延迟值。

Patent Agency Ranking