Partial array refresh timing
    2.
    发明授权

    公开(公告)号:US11868619B2

    公开(公告)日:2024-01-09

    申请号:US17785269

    申请日:2020-12-03

    Applicant: Rambus Inc.

    Abstract: A memory controller combines information about which memory component segments are not being refreshed with the information about which rows are going to be refreshed next, to determine, for the current refresh command, the total number of rows that are going to be refreshed. Based on this total number of rows, the memory controller selects how long to wait after the refresh command before issuing a next subsequent command. When the combination of masked segments and the refresh scheme results in less than the ‘nominal’ number of rows typically refreshed in response to a single refresh command, the waiting period before the next command (e.g., non-refresh command) is issued may be reduced from the ‘nominal’ minimum time period, thereby allowing the next command to be issued earlier.

    FLASH MEMORY DEVICE HAVING A CALIBRATION MODE

    公开(公告)号:US20230418770A1

    公开(公告)日:2023-12-28

    申请号:US18216439

    申请日:2023-06-29

    Applicant: Rambus Inc.

    CPC classification number: G06F13/1668 Y02D10/00

    Abstract: A method of operation of a flash integrated circuit (IC) memory device is described. The flash IC memory device has an array of memory cells and an interface to receive control, address and data signals using an internal reference voltage. The method includes, at boot-up, initializing the internal reference voltage to a default voltage. At boot-up, the interface is operable to receive, using the internal reference voltage, signals having a first voltage swing at a first signaling frequency. The method includes receiving a first command that specifies calibration of the interface during a calibration mode. The calibration mode is used to calibrate the interface to operate at a second signaling frequency and receive signals having a second voltage swing. The second voltage swing is smaller than the first voltage swing and the second signaling frequency is higher than the first signaling frequency.

    Energy-Efficient Error-Correction-Detection Storage

    公开(公告)号:US20230315563A1

    公开(公告)日:2023-10-05

    申请号:US18306542

    申请日:2023-04-25

    Applicant: Rambus Inc.

    CPC classification number: G06F11/1004 G06F3/0673 G06F3/064 G06F3/0619

    Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

    DEDICATED CACHE-RELATED BLOCK TRANSFER IN A MEMORY SYSTEM

    公开(公告)号:US20220214979A1

    公开(公告)日:2022-07-07

    申请号:US17581659

    申请日:2022-01-21

    Applicant: Rambus Inc.

    Abstract: A memory system includes a dynamic random access memory (DRAM) device, a second memory device, and a memory controller circuit. The memory controller circuit is coupled to the DRAM device by a first data channel configured to transfer first data between the memory controller circuit and the DRAM device on behalf of a host, and is also coupled to the DRAM device by a second data channel configured to transfer second data between the memory controller circuit and the DRAM device on behalf of the second memory device while the first data is being transferred across the first data bus.

    Energy-Efficient Error-Correction-Detection Storage

    公开(公告)号:US20200278902A1

    公开(公告)日:2020-09-03

    申请号:US16832263

    申请日:2020-03-27

    Applicant: Rambus Inc.

    Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

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