公开(公告)号：US20160181406A1

公开(公告)日：2016-06-23

申请号：US15057457

申请日：2016-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/24 ,  H01L21/02 ,  H01L29/786 ,  H01L21/465 ,  H01L21/441

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/441 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

Abstract translation: 本发明的目的是提供一种包括控制载流子密度的氧氮化物半导体的半导体器件。 通过将控制氮引入到氧化物半导体层中，可以制造其中具有期望的载流子密度和特性的氧氮化物半导体用于沟道的晶体管。 此外，通过使用氧氮化物半导体，即使在氮氧化物半导体层和源电极之间以及氧氮化物半导体层和漏电极之间没有设置低电阻层等的情况下，也可以表现出良好的接触特性。

公开(公告)号：US20160125969A1

公开(公告)日：2016-05-05

申请号：US14993395

申请日：2016-01-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Takayuki SAITO ,  Yuki IMOTO ,  Noriaki UTO ,  Yuta ENDO ,  Hitomi SHIONOYA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI

IPC: H01B1/02

CPC classification number: H01B1/02 ,  C23C14/0676 ,  C23C14/3414 ,  C23C14/541 ,  C23C14/5806

Abstract: An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

Abstract translation: 本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。 另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。 另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。 当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。 在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

公开(公告)号：US20150137123A1

公开(公告)日：2015-05-21

申请号：US14602878

申请日：2015-01-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

Abstract translation: 在包括氧化物半导体膜的晶体管中，其包括用于从氧化物半导体膜（氢捕获膜）捕获氢的膜和用于扩散氢的膜（氢可渗透膜），氢从氧化物半导体膜转移到 通过热处理通过氢气渗透膜的氢捕获膜。 具体地，包含氧化物半导体膜的晶体管的基膜或保护膜具有氢捕获膜和氢可渗透膜的堆叠层结构。 此时，氢氧渗透膜形成在与氧化物半导体膜接触的一侧。 之后，通过热处理从氧化物半导体膜释放的氢气通过氢可渗透膜转移到氢捕获膜。

公开(公告)号：US20150084050A1

公开(公告)日：2015-03-26

申请号：US14560259

申请日：2014-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Kosei NODA ,  Yuhei SATO ,  Yuta ENDO

IPC: H01L29/786 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42364

Abstract: Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

Abstract translation: 氧化物半导体膜中的氢浓度和氧空位减少。 提高了包括使用氧化物半导体膜的晶体管的半导体器件的可靠性。 本发明的一个实施例是一种半导体器件，其包括基底绝缘膜; 形成在所述基底绝缘膜上的氧化物半导体膜; 形成在所述氧化物半导体膜上的栅极绝缘膜; 以及与氧化物半导体膜重叠的栅电极，其间设置有栅极绝缘膜。 基极绝缘膜通过电子自旋共振显示出g值为2.01的信号。 氧化物半导体膜通过电子自旋共振不显示g值为1.93的信号。

公开(公告)号：US20150060853A1

公开(公告)日：2015-03-05

申请号：US14537232

申请日：2014-11-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Kosei NODA ,  Yuta ENDO

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention.

Abstract translation: 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 p型氧化物半导体材料包含在n型氧化物半导体膜中，由此可以减少在氧化物半导体膜中产生的载流子。 这是因为在n型氧化物半导体膜中产生的电子没有意图与在p型氧化物半导体材料中产生的空穴重新组合而消失。 因此，可以无意地减少在氧化物半导体膜中产生的载流子。

公开(公告)号：US20140342498A1

公开(公告)日：2014-11-20

申请号：US14448015

申请日：2014-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L21/477 ,  H01L21/425

CPC classification number: H01L29/66969 ,  H01L21/02 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L21/425 ,  H01L21/477 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

Abstract translation: 使用其中氧化物半导体包括在沟道区域中的晶体管制造半导体器件，并且不太可能引起由于短沟道效应引起的电特性的变化。 半导体器件包括具有一对氧氮化物半导体区域的氧化物半导体膜，该氧氮化物半导体区域包括氮和夹在一对氧氮化物半导体区域之间的氧化物半导体区域，栅极绝缘膜和设置在氧化物半导体区域上的栅电极，栅极绝缘 胶片位于其间。 这里，一对氧氮化物半导体区域用作晶体管的源极区域和漏极区域，氧化物半导体区域用作晶体管的沟道区域。

公开(公告)号：US20140239297A1

公开(公告)日：2014-08-28

申请号：US14269819

申请日：2014-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Hitomi SATO ,  Kosei NODA ,  Yuta ENDO ,  Mizuho IKARASHI ,  Keitaro IMAI ,  Atsuo ISOBE ,  Yutaka OKAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

Abstract translation: 本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。 首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序 在不暴露于空气的情况下执行层。 接下来，在形成氧化物半导体层之后，进行第二热处理。 使用通过加热而释放氧的绝缘层作为基底绝缘层。

公开(公告)号：US20130099237A1

公开(公告)日：2013-04-25

申请号：US13651809

申请日：2012-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Kosei NODA ,  Yuhei SATO ,  Yuta ENDO

IPC: H01L21/477 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42364

Abstract: Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.