公开(公告)号：US20140306221A1

公开(公告)日：2014-10-16

申请号：US14247676

申请日：2014-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masayuki SAKAKURA ,  Motoki NAKASHIMA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78696

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract translation: 处理使用铜，铝，金，银，钼等形成的布线的步骤的稳定性增加。 此外，半导体膜中的杂质浓度降低。 此外，提高了半导体器件的电特性。 在包括氧化物半导体膜，与氧化物半导体膜接触的氧化物膜和与氧化膜接触并包括铜，铝，金，银，钼等的一对导电膜的晶体管中， 氧化物膜具有多个晶体部分，并且在晶体部分中具有c轴取向，并且c轴在与氧化物半导体膜或氧化物膜的顶表面的法向量平行的方向上排列。

公开(公告)号：US20250081534A1

公开(公告)日：2025-03-06

申请号：US18599592

申请日：2024-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G01N23/223 ,  G01N23/2273 ,  H01L29/04

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The first insulating layer is in contact with part of the top surface of the semiconductor layer, the conductive layer is positioned over the first insulating layer, and the second insulating layer is positioned over the semiconductor layer. The semiconductor layer contains a metal oxide and includes a first region overlapping with the conductive layer and a second region not overlapping with the conductive layer. The second region is in contact with the second insulating layer. The second insulating layer contains oxygen and a first element. The first element is one or more of phosphorus, boron, magnesium, aluminum, and silicon.

公开(公告)号：US20240389442A1

公开(公告)日：2024-11-21

申请号：US18693773

申请日：2022-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuya SUGIMOTO ,  Ryo HATSUMI ,  Daisuke KUBOTA ,  Rai SATO ,  Masataka NAKADA ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K39/34

Abstract: A display apparatus having an image capturing function is provided. An image capturing device or a display apparatus capable of high-sensitivity image capturing can be provided. The display apparatus includes a first substrate, a second substrate facing the first substrate, a light-emitting element over the first substrate, a light-receiving element adjacent to the light-emitting element, a first light-blocking layer over the first substrate, a second light-blocking layer on the surface of the second substrate facing the first substrate, and a third light-blocking layer on the surface of the second light-blocking layer facing the first substrate. Each of the first to third light-blocking layers is provided between the light-emitting element and the light-receiving element in a plan view. The first light-blocking layer and the third light-blocking layer are provided so as to have a space between each other in a plan view.

公开(公告)号：US20240389441A1

公开(公告)日：2024-11-21

申请号：US18692873

申请日：2022-09-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Rai SATO ,  Masataka NAKADA ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K39/34

Abstract: A display apparatus having an image capturing function is provided. Noise in image capturing is reduced. The display apparatus includes a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a spacer, a protective layer, and a light-blocking layer. The first organic layer is provided over the first pixel electrode. The second organic layer is provided over the second pixel electrode. The common electrode includes a portion overlapping with the first pixel electrode with the first organic layer positioned therebetween and a portion overlapping with the second pixel electrode with the second organic layer positioned therebetween. The protective layer is provided to cover the common electrode. The spacer has a light-transmitting property with respect to visible light and includes a portion overlapping with the first pixel electrode with the protective layer, the common electrode, and the first organic layer positioned therebetween. The light-blocking layer is provided over the spacer and includes an opening overlapping with the second pixel electrode. The first organic layer includes a photoelectric conversion layer, and the second organic layer includes a light-emitting layer.

公开(公告)号：US20240381737A1

公开(公告)日：2024-11-14

申请号：US18294431

申请日：2022-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hisao IKEDA ,  Yasutaka NAKAZAWA ,  Rai SATO ,  Shunpei YAMAZAKI

IPC: H10K59/65 ,  H10K59/126 ,  H10K59/38 ,  H10K59/40 ,  H10K59/80

Abstract: A display apparatus having an image capturing function is provided. An image capturing device or a display apparatus capable of high-sensitivity image capturing is provided. The display apparatus includes a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a first resin layer, a second resin layer, and a light-blocking layer. The first organic layer and the second organic layer are provided over the first pixel electrode and the second pixel electrode, respectively. The first resin layer and the second resin layer cover an end portion of the first organic layer and an end portion of the second organic layer, respectively. A side surface of the first organic layer and a side surface of the second organic layer face each other with the first resin layer and the second resin layer interposed therebetween. The common electrode includes portions overlapping with the first pixel electrode, the second pixel electrode, the first resin layer, and the second resin layer, and a depressed portion positioned between the first resin layer and the second resin layer in a plan view. The light-blocking layer is provided over the common electrode so as to fill the depressed portion of the common electrode.

公开(公告)号：US20240379856A1

公开(公告)日：2024-11-14

申请号：US18664558

申请日：2024-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L27/12

Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

公开(公告)号：US20240244887A1

公开(公告)日：2024-07-18

申请号：US18390937

申请日：2023-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Naoto GOTO ,  Kenichi OKAZAKI ,  Takayuki OHIDE

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/80515

Abstract: A method for manufacturing a novel display device that is highly convenient, useful, or reliable is to be provided. A first film is formed over a first electrode and a second electrode in a second step in the manufacturing method; a second film is formed over the first film in a third step; a third film is formed over the second film by a CVD method in a fourth step; part of the third film located above the second electrode is removed by an etching method to form a first layer overlapping with the first electrode in a fifth step; and part of the second film and part of the first film each located above the second electrode are removed by an etching method using the first layer to form a second layer and a first unit each overlapping with the first electrode in a sixth step.

公开(公告)号：US20240213335A1

公开(公告)日：2024-06-27

申请号：US18288599

申请日：2022-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi SHIRAISHI ,  Rai SATO ,  Kenichi OKAZAKI

IPC: H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H10K59/1201 ,  H10K59/1213 ,  H01L29/45

Abstract: A miniaturized semiconductor device is provided. The semiconductor device includes a semiconductor layer over a substrate, a first conductive layer and a second conductive layer being apart from each other over the semiconductor layer, a mask layer in contact with a top surface of the first conductive layer, a first insulating layer covering the semiconductor layer, the first conductive layer, the second conductive layer, and the mask layer, and a third conductive layer overlapping with the semiconductor layer and being over the first insulating layer. The first insulating layer is in contact with a top surface and a side surface of the mask layer, a side surface of the first conductive layer, a top surface and a side surface of the second conductive layer, and a top surface of the semiconductor layer. The semiconductor device includes a region in which the distance between opposite end portions of the first conductive layer and the second conductive layer is less than or equal to 1 μm.

公开(公告)号：US20240099069A1

公开(公告)日：2024-03-21

申请号：US18276078

申请日：2022-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Rai SATO ,  Masahiro KATAYAMA ,  Naoto GOTO ,  Yasutaka NAKAZAWA ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201

Abstract: A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.

公开(公告)号：US20230317856A1

公开(公告)日：2023-10-05

申请号：US18132527

申请日：2023-04-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Yasutaka NAKAZAWA ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H05B33/22

CPC classification number: H01L29/7869 ,  H01L29/78603 ,  H01L29/78696 ,  H01L27/1225 ,  H05B33/22 ,  H10K50/00

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.