公开(公告)号：US20240389442A1

公开(公告)日：2024-11-21

申请号：US18693773

申请日：2022-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuya SUGIMOTO ,  Ryo HATSUMI ,  Daisuke KUBOTA ,  Rai SATO ,  Masataka NAKADA ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K39/34

Abstract: A display apparatus having an image capturing function is provided. An image capturing device or a display apparatus capable of high-sensitivity image capturing can be provided. The display apparatus includes a first substrate, a second substrate facing the first substrate, a light-emitting element over the first substrate, a light-receiving element adjacent to the light-emitting element, a first light-blocking layer over the first substrate, a second light-blocking layer on the surface of the second substrate facing the first substrate, and a third light-blocking layer on the surface of the second light-blocking layer facing the first substrate. Each of the first to third light-blocking layers is provided between the light-emitting element and the light-receiving element in a plan view. The first light-blocking layer and the third light-blocking layer are provided so as to have a space between each other in a plan view.

公开(公告)号：US20240415012A1

公开(公告)日：2024-12-12

申请号：US18690357

申请日：2022-09-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Kazuya SUGIMOTO ,  Akio YAMASHITA ,  Yasuhiro NIIKURA ,  Sachiko KAWAKAMI ,  Anna TADA

IPC: H10K85/60 ,  C07C211/61 ,  H10K39/00

Abstract: A novel and highly convenient, useful, or reliable material for a photoelectric conversion device is provided. The photoelectric conversion device includes a first electrode, a second electrode, a first layer, a second layer, and a third layer. The first layer is held between the first electrode and the second electrode; the second layer is held between the second electrode and the first layer; the third layer is held between the second electrode and the second layer; and the third layer has higher electron mobility than the first layer. The material is used in the second layer, the material contains an anthracene skeleton, and the anthracene skeleton is bonded to a diarylamino group, a diheteroarylamino group, or an arylheteroarylamino group.

公开(公告)号：US20170170326A1

公开(公告)日：2017-06-15

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Kazuya SUGIMOTO ,  Tsutomu MURAKAWA ,  Motoki NAKASHIMA ,  Shinpei MATSUDA ,  Noritaka ISHIHARA ,  Daisuke KUROSAKI ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Junichi KOEZUKA

IPC: H01L29/786 ,  H01L27/105 ,  H03K17/687 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US20230309346A1

公开(公告)日：2023-09-28

申请号：US18122773

申请日：2023-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Kazuya SUGIMOTO

IPC: H10K59/122 ,  G09G3/3233 ,  G06V40/13 ,  H10K59/12 ,  H10K39/34

CPC classification number: H10K59/122 ,  G09G3/3233 ,  G06V40/1318 ,  H10K59/1201 ,  H10K39/34 ,  G09G2300/0842 ,  G09G2330/021 ,  G09G2300/0452 ,  G09G2300/0465 ,  H10K59/35

Abstract: A display apparatus with a high aperture ratio can be provided. A display apparatus with a personal authentication function can be provided. A display apparatus having high display quality can be provided. A highly reliable display apparatus can be provided. A display apparatus that can have a higher resolution can be provided. A display apparatus with low power consumption can be provided. An imaging device includes a pixel electrode, a first layer over the pixel electrode, an insulating layer covering part of the top surface of the first layer, and a common electrode covering the first layer and the insulating layer, and the first layer includes a photoelectric conversion layer.

公开(公告)号：US20180006124A1

公开(公告)日：2018-01-04

申请号：US15628945

申请日：2017-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsutomu MURAKAWA ,  Toshihiko TAKEUCHI ,  Hiroki KOMAGATA ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Shota SAMBONSUGE ,  Kazuya SUGIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/24 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/24 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7881

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US20230354625A1

公开(公告)日：2023-11-02

申请号：US18306841

申请日：2023-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Akio YAMASHITA ,  Kazuya SUGIMOTO ,  Taisuke KAMADA ,  Sachiko KAWAKAMI ,  Kazuki KAJIYAMA ,  Yasutaka NAKAZAWA ,  Kaori IKADA

IPC: H10K39/32 ,  H10K39/38 ,  H10K59/80

CPC classification number: H10K39/32 ,  H10K39/38 ,  H10K59/80517 ,  H10K59/80523

Abstract: A photoelectric conversion device in which an increase in driving voltage is inhibited is provided. The photoelectric conversion device includes a first electrode, a second electrode, and an organic compound layer; the organic compound layer is positioned between the first electrode and the second electrode; the organic compound layer includes a first layer; a structure body including projections is included between the first layer and the second electrode; and the structure body contains a first organic compound.