公开(公告)号：US20220302314A1

公开(公告)日：2022-09-22

申请号：US17830620

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiromichi GODO ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L29/49

Abstract: To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced.

公开(公告)号：US20210184042A1

公开(公告)日：2021-06-17

申请号：US17167286

申请日：2021-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Akihisa SHIMOMURA ,  Yuji EGI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US20190341495A1

公开(公告)日：2019-11-07

申请号：US16513826

申请日：2019-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20190237586A1

公开(公告)日：2019-08-01

申请号：US16354394

申请日：2019-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Hideomi SUZAWA ,  Sachiaki TEZUKA ,  Tetsuhiro TANAKA ,  Toshiya ENDO ,  Mitsuhiro ICHIJO

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/092 ,  H01L27/06 ,  H01L29/49 ,  H01L21/8258 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L21/76826 ,  H01L21/02321 ,  H01L21/76802 ,  H01L21/823418 ,  H01L21/823462 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78651 ,  H01L29/7869 ,  H01L29/78696

Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

公开(公告)号：US20190221674A1

公开(公告)日：2019-07-18

申请号：US16367329

申请日：2019-03-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka OKAZAKI ,  Akihisa SHIMOMURA ,  Naoto YAMADE ,  Tomoya TAKESHITA ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L29/45 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US20190165179A1

公开(公告)日：2019-05-30

申请号：US16248903

申请日：2019-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Sachiaki TEZUKA ,  Tetsuhiro TANAKA ,  Toshiya ENDO ,  Mitsuhiro ICHIJO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

公开(公告)号：US20190035937A1

公开(公告)日：2019-01-31

申请号：US16024967

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20180323306A1

公开(公告)日：2018-11-08

申请号：US16038515

申请日：2018-07-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiromichi GODO ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/4908

Abstract: To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced.

公开(公告)号：US20180151743A1

公开(公告)日：2018-05-31

申请号：US15865308

申请日：2018-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20170018655A1

公开(公告)日：2017-01-19

申请号：US15204015

申请日：2016-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka OKAZAKI ,  Akihisa SHIMOMURA ,  Naoto YAMADE ,  Tomoya TAKESHITA ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Abstract translation: 提供具有良好电特性的晶体管。 本发明的一个实施例是一种半导体器件，包括半导体，与半导体接触的第一绝缘体，与第一绝缘体接触的第一导体，并与位于半导体与第一导体之间的第一绝缘体与半导体重叠， 以及与半导体接触的第二导体和第三导体。 第一至第三导体中的一个或多个包括含有钨和选自硅，碳，锗，锡，铝和镍中的一种或多种元素的区域。