公开(公告)号：US07291545B2

公开(公告)日：2007-11-06

申请号：US11284975

申请日：2005-11-21

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： H01L21/04

CPC分类号： H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.

摘要翻译： 将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。 所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

公开(公告)号：US07183177B2

公开(公告)日：2007-02-27

申请号：US10989993

申请日：2004-11-16

申请人： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  C23C14/48 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32412 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659

摘要： A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of the pair of wafers. The method further includes performing a cleavage ion implantation step on one of the pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of the wafer at the predetermined depth below the top surface of the one wafer. The wafers are then bonded together by placing the first surfaces of the pair of wafers onto one another so as to form an semiconductor-on-insulator structure. The method also includes separating the one wafer along the cleavage plane so as to remove a portion of the one wafer between the second surface and the cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of the one wafer on the semiconductor-on-insulator structure. Finally, the cleaved surface is smoothed, preferably by carrying out a low energy high momentum ion implantation step.

摘要翻译： 一种从一对半导体晶片制造绝缘体上半导体结构的方法包括在第一晶片的至少第一表面上形成氧化物层，并通过离子注入第一种类进行结合增强注入步骤 在所述一对晶片中的至少一个的第一表面中。 所述方法还包括通过离子注入第二种类来在所述一对晶片之一上执行切割离子注入步骤，以在所述晶片的顶部表面下方的预定深度处限定跨所述晶片的直径的解理面。 然后通过将一对晶片的第一表面放置在彼此上而将晶片结合在一起，以形成绝缘体上半导体结构。 该方法还包括沿着解理平面分离一个晶片，以便去除第二表面和解理面之间的一个晶片的一部分，从而形成半导体芯片上的一个晶片的剩余部分的暴露的切割表面， 绝缘体上的结构。 最后，优选通过进行低能量的高动量离子注入步骤来平滑切割的表面。

公开(公告)号：US07166524B2

公开(公告)日：2007-01-23

申请号：US11003000

申请日：2004-12-01

申请人： Amir Al-Bayati ,  Rick J. Roberts ,  Kenneth S. Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Rick J. Roberts ,  Kenneth S. Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/425

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/76254

摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.

摘要翻译： 集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。 每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

公开(公告)号：US07137354B2

公开(公告)日：2006-11-21

申请号：US10646458

申请日：2003-08-22

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： G23C16/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/321

摘要： A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region and a first hollow conduit outside of the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across said process region. A gas distribution apparatus is provided on or near an interior surface of the reactor for introducing a process gas containing the species to be ion implanted and a first RE plasma source power applicator for generating a plasma in the chamber.

摘要翻译： 用于将物质离子注入到工件的表面层中的等离子体浸没离子注入反应器包括具有侧壁和限定腔室的天花板的壳体，以及腔室内的工件支撑基座，其具有面向天花板的工件支撑表面并且限定 大致横跨晶片支撑基座延伸并由侧壁横向限制并且在工件支撑基座和天花板之间轴向延伸的过程区域。 外壳在工艺区域的大致相对侧具有至少第一对开口，在腔室外部具有第一和第二端，第一和第二端连接到第一对开口中的相应开口，以便提供第一凹槽 路径延伸穿过导管并穿过所述过程区域。 气体分配装置设置在反应器的内表面上或附近，用于引入含有要离子注入的物质的处理气体和用于在室中产生等离子体的第一RE等离子体源功率施加器。

公开(公告)号：US07700465B2

公开(公告)日：2010-04-20

申请号：US10646533

申请日：2003-08-22

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： H01L21/26

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.

摘要翻译： 用于将物种离子注入到室中的工件的表面层中的方法包括将工件放置在由室侧壁和面向所述工件的室顶部以及室的一对端口之间限定的室的处理区域中 靠近处理区域大致相对的两侧，并通过腔室外部的导管连接在一起。 该方法还包括向腔室内引入包括待注入物种的工艺气体，并且还从工艺气体中产生等离子体电流并使等离子体电流在包括导管和处理区域的循环折返路径中振荡。

公开(公告)号：US07666464B2

公开(公告)日：2010-02-23

申请号：US10971772

申请日：2004-10-23

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC分类号： C23C14/48 ,  C23C14/54 ,  C23C16/52 ,  C23C16/505

CPC分类号： H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

摘要翻译： 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， ，然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

公开(公告)号：US07428915B2

公开(公告)日：2008-09-30

申请号：US11115956

申请日：2005-04-26

申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： F16K11/052

CPC分类号： F16K1/526 ,  F16K1/22 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/87531

摘要： A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to block flow of a gas on one side of said valve housing up to a predetermined pressure limit, thereby obviating any need for O-rings.

摘要翻译： 具有高的最大气体流量和气体流量的精细控制的阀门系统包括用于阻止气体流过气体流路的阀壳体，通过所述壳体的大面积开口具有第一弧形侧壁和小区域开口 所述壳体分别具有第二弧形侧壁和分别在所述大面积和小面积开口中的相应的大面积和小面积的可旋转阀瓣，并且分别具有与所述第一和第二弧形侧壁一致的弓形边缘，并且在其间限定各自的第一 和第二阀间隙。 第一和第二阀间隙足够小以阻止气体在所述阀壳体的一侧上的流动直到预定的压力极限，从而避免了对O形环的任何需要。

公开(公告)号：US07422775B2

公开(公告)日：2008-09-09

申请号：US11131899

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H05H1/24

CPC分类号： H05H1/46

摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

摘要翻译： 一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积 在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

公开(公告)号：US07323401B2

公开(公告)日：2008-01-29

申请号：US11199593

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/22 ,  H01L21/38

CPC分类号： H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

摘要翻译： 使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域 到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。 该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：US07303982B2

公开(公告)日：2007-12-04

申请号：US10646467

申请日：2003-08-22

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： H01L21/42 ,  H01L21/425

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.

摘要翻译： 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域， 以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。 该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。