公开(公告)号：US20110003462A1

公开(公告)日：2011-01-06

申请号：US12920363

申请日：2009-03-23

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/306

CPC分类号： H01L21/76254 ,  H01L21/30608

摘要： Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

摘要翻译： 提供一种SOI晶片的制造方法，其能够：有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。 制造SOI晶片的方法至少包括以下步骤：将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底，其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片，从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 在浸渍的剥离后的SOI晶片上，在900℃以上的温度下进行热处理，和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。

公开(公告)号：US07749870B2

公开(公告)日：2010-07-06

申请号：US12383834

申请日：2009-03-27

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/322

CPC分类号： H01L21/76254 ,  Y10S438/964 ,  Y10S438/967

摘要： Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser.

摘要翻译： 提供一种制造SOI基板的方法，该SOI基板包括透明绝缘基板和形成在绝缘基板的第一主表面上的硅膜，其中绝缘基板的与主表面相对的第二主表面被粗糙化，该方法抑制 以简单方便的方式生成金属杂质和颗粒。 更具体地说，提供一种SOI基板的制造方法，其包括透明绝缘基板，形成在透明绝缘基板的第一主表面上的硅膜和与第一主表面相对的粗糙化的第二主表面， 方法包括以下步骤：提供透明绝缘基板，至少透明绝缘基板的第一主表面进行镜面处理，在透明绝缘基板的第一主表面上形成硅膜，并且对第二主表面进行激光加工 的透明绝缘基板，以便通过使用激光使第二主表面粗糙化。

公开(公告)号：US20120119323A1

公开(公告)日：2012-05-17

申请号：US13320655

申请日：2010-05-25

申请人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L21/762 ,  H01L29/02

CPC分类号： H01L21/76254 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/268

摘要： A method of making bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate.

摘要翻译： 一种通过从半导体衬底的表面注入离子以形成离子注入层来在蓝宝石衬底上或上方制造具有半导体膜的结合SOS衬底的方法; 激活蓝宝石衬底和离子已被植入的半导体衬底之一的至少一个表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材。 并将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到半导体衬底的离子注入层，使得离子注入层的界面在接合体的温度下脆性高于表面 以将半导体膜转移到蓝宝石衬底。

公开(公告)号：US20120126362A1

公开(公告)日：2012-05-24

申请号：US13320663

申请日：2010-05-25

申请人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/268

摘要： A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded.

摘要翻译： 通过以下步骤获得在蓝宝石衬底的表面上或上方具有半导体膜的结合SOS衬底：从半导体衬底的表面注入离子以形成离子注入层的步骤; 至少活化离子已被植入的表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材以形成粘合体; 以及将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到所述半导体衬底的离子注入层，以使所述离子注入层的界面脆化，同时将所述接合体保持在高于 键合半导体衬底和蓝宝石衬底的表面。

公开(公告)号：US08030176B2

公开(公告)日：2011-10-04

申请号：US12380090

申请日：2009-02-24

申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

IPC分类号： H01L21/46

CPC分类号： C30B31/20 ,  C30B19/12 ,  C30B23/025 ,  C30B25/183 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B33/02 ,  C30B33/06 ,  H01L21/76254

摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

摘要翻译： 提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。 更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

公开(公告)号：US20090221131A1

公开(公告)日：2009-09-03

申请号：US12380090

申请日：2009-02-24

申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

IPC分类号： H01L21/36

CPC分类号： C30B31/20 ,  C30B19/12 ,  C30B23/025 ,  C30B25/183 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B33/02 ,  C30B33/06 ,  H01L21/76254

摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

摘要翻译： 提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。 更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

公开(公告)号：US08497188B2

公开(公告)日：2013-07-30

申请号：US13318250

申请日：2010-04-30

申请人： Makoto Kawai ,  Yuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/67109

摘要： When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate (3) from a surface thereof to form an ion-implanted interface (5); bonding a handle substrate (7) with a thermal expansion coefficient higher than that of the donor substrate (3) onto the ion-implanted surface of the donor substrate to provide bonded substrates, subjecting the bonded substrates to a heat treatment to provide an assembly (1), and delaminating the donor substrate (3) of the assembly (1) at the ion-implanted interface wherein the assembly (1) has been cooled to a temperature not greater than room temperature by a cooling apparatus (20), so that a donor film is transferred onto the handle substrate (7).

摘要翻译： 当处理基板的热膨胀系数高于供体基板的热膨胀系数时，可以提供分层而不引起基板的裂纹。 一种用于制造接合晶片的方法，至少具有以下步骤：从其表面将离子注入施主衬底（3）中以形成离子注入界面（5）; 将具有高于施主衬底（3）的热膨胀系数的手柄衬底（7）接合到施主衬底的离子注入表面上以提供接合衬底，对接合的衬底进行热处理以提供组件（ 1），并且在离子注入界面处使组件（1）的施主衬底（3）分层，其中组件（1）已经被冷却装置（20）冷却到不高于室温的温度，使得 施主膜转移到手柄基板（7）上。

公开(公告)号：US20120058622A1

公开(公告)日：2012-03-08

申请号：US13318250

申请日：2010-04-30

申请人： Makoto Kawai ,  Yuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/67109

摘要： When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate (3) from a surface thereof to form an ion-implanted interface (5); bonding a handle substrate (7) with a thermal expansion coefficient higher than that of the donor substrate (3) onto the ion-implanted surface of the donor substrate to provide bonded substrates, subjecting the bonded substrates to a heat treatment to provide an assembly (1), and delaminating the donor substrate (3) of the assembly (1) at the ion-implanted interface wherein the assembly (1) has been cooled to a temperature not greater than room temperature by a cooling apparatus (20), so that a donor film is transferred onto the handle substrate (7).

摘要翻译： 当处理基板的热膨胀系数高于供体基板的热膨胀系数时，可以提供分层而不引起基板的裂纹。 一种用于制造接合晶片的方法，至少具有以下步骤：从其表面将离子注入施主衬底（3）中以形成离子注入界面（5）; 将具有高于施主衬底（3）的热膨胀系数的手柄衬底（7）接合到施主衬底的离子注入表面上以提供接合衬底，对接合的衬底进行热处理以提供组件（ 1），并且在离子注入界面处使组件（1）的施主衬底（3）分层，其中组件（1）已经被冷却装置（20）冷却到不高于室温的温度，使得 施主膜转移到手柄基板（7）上。

公开(公告)号：US5382469A

公开(公告)日：1995-01-17

申请号：US72233

申请日：1993-06-03

申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Shinji Kojima ,  Ken-ichi Arai

发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Shinji Kojima ,  Ken-ichi Arai

IPC分类号： B23Q3/15 ,  C04B35/117 ,  H01L21/683 ,  H02N13/00 ,  B32B18/00

CPC分类号： H01L21/6831 ,  C04B35/117 ,  Y10T279/23 ,  Y10T428/26

摘要： Proposed is a ceramic-made electrostatic chuck consisting of two insulating ceramic layers and a metallic electrode layer integrally sandwiched between the two insulating layers, which has a very quick response characteristic to turning-on and -off of the electric voltage applied to the electrodes without affecting the very high electrostatic attracting force. This improvement can be obtained by forming the insulating ceramic layers from a specific ceramic material consisting of a highly resistive ceramic material such as alumina and the like and titanium nitride admixed with the former in an amount not exceeding 5% by weight but sufficient to impart the insulating ceramic layers with a volume resistivity in the range from 1.times.10.sup.8 to 1.times.10.sup.13 ohm.cm at 20.degree. C.

摘要翻译： 提出了一种由两个绝缘陶瓷层和一体地夹在两个绝缘层之间的金属电极层组成的陶瓷制静电卡盘，其对施加到电极的电压的导通和断开具有非常快的响应特性，而没有 影响非常高的静电吸引力。 这种改进可以通过从由高电阻陶瓷材料如氧化铝等组成的特定陶瓷材料和与前者混合的氮化钛以不超过5重量％的量形成绝缘陶瓷层而获得，但足以使 在20℃下体积电阻率为1×10 8至1×10 13欧姆·厘米的绝缘陶瓷层。

公开(公告)号：US06376977B1

公开(公告)日：2002-04-23

申请号：US09580638

申请日：2000-05-30

申请人： Makoto Kawai ,  Keiichi Goto ,  Kazuyoshi Tamura ,  Yoshihiro Kubota ,  Toshimi Kobayashi

发明人： Makoto Kawai ,  Keiichi Goto ,  Kazuyoshi Tamura ,  Yoshihiro Kubota ,  Toshimi Kobayashi

IPC分类号： G01M1102

CPC分类号： H01J37/32009 ,  H01J37/3255 ,  Y10T428/24421 ,  Y10T428/249969

摘要： There is disclosed a silicon electrode plate including silicon single crystal used as an upper electrode in a plasma etching apparatus wherein concentration of interstitial oxygen contained in the silicon electrode plate is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, and the silicon electrode plate wherein nitrogen concentration in the silicon electrode plate is not less than 5×1013 atoms/cm3 and not more than 5×1015 atoms/cm3. There can be provided a silicon electrode plate consisting of silicon single crystal used as an upper electrode in a plasma etching apparatus wherein problems due to adhesion of impurities such as heavy metal or the like can be prevented.

摘要翻译： 公开了一种在等离子体蚀刻装置中用作上电极的硅单晶的硅电极板，其中硅电极板中所含的间隙氧的浓度不小于5×10 17原子/ cm 3且不大于1.5×10 18原子/ cm 3， 硅电极板中的氮浓度不小于5×10 13原子/ cm 3且不大于5×10 15原子/ cm 3的硅电极板。 在等离子体蚀刻装置中可以提供由用作上电极的硅单晶组成的硅电极板，其中可以防止由于诸如重金属等的杂质的附着而引起的问题。