公开(公告)号：US06376977B1

公开(公告)日：2002-04-23

申请号：US09580638

申请日：2000-05-30

申请人： Makoto Kawai ,  Keiichi Goto ,  Kazuyoshi Tamura ,  Yoshihiro Kubota ,  Toshimi Kobayashi

发明人： Makoto Kawai ,  Keiichi Goto ,  Kazuyoshi Tamura ,  Yoshihiro Kubota ,  Toshimi Kobayashi

IPC分类号： G01M1102

CPC分类号： H01J37/32009 ,  H01J37/3255 ,  Y10T428/24421 ,  Y10T428/249969

摘要： There is disclosed a silicon electrode plate including silicon single crystal used as an upper electrode in a plasma etching apparatus wherein concentration of interstitial oxygen contained in the silicon electrode plate is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, and the silicon electrode plate wherein nitrogen concentration in the silicon electrode plate is not less than 5×1013 atoms/cm3 and not more than 5×1015 atoms/cm3. There can be provided a silicon electrode plate consisting of silicon single crystal used as an upper electrode in a plasma etching apparatus wherein problems due to adhesion of impurities such as heavy metal or the like can be prevented.

摘要翻译： 公开了一种在等离子体蚀刻装置中用作上电极的硅单晶的硅电极板，其中硅电极板中所含的间隙氧的浓度不小于5×10 17原子/ cm 3且不大于1.5×10 18原子/ cm 3， 硅电极板中的氮浓度不小于5×10 13原子/ cm 3且不大于5×10 15原子/ cm 3的硅电极板。 在等离子体蚀刻装置中可以提供由用作上电极的硅单晶组成的硅电极板，其中可以防止由于诸如重金属等的杂质的附着而引起的问题。

公开(公告)号：US06815352B1

公开(公告)日：2004-11-09

申请号：US09696955

申请日：2000-10-27

申请人： Kazuyoshi Tamura ,  Makoto Kawai ,  Keiichi Goto

发明人： Kazuyoshi Tamura ,  Makoto Kawai ,  Keiichi Goto

IPC分类号： H01L21302

CPC分类号： H01J37/32642 ,  C30B15/00 ,  C30B29/06

摘要： There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3 is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.

摘要翻译： 公开了在等离子体装置中用作硅聚焦环的硅单晶组成的硅聚焦环，其中硅聚焦环中所含的间隙氧的浓度不小于5×10 17原子/ cm 3，而不是 大于1.5×10 18原子/ cm 3，以及用于等离子体装置的硅聚焦环的制造方法，其中，在硅聚焦环中包含的间隙氧的浓度为5×10 6个以上的单晶硅 通过Czochralski法生长17个原子/ cm 3以上1.5×10 18个/ cm 3以下的单晶硅，制成硅聚焦环。 可以提供硅聚焦环，其可以防止由于诸如重金属的杂质导致的不利影响。

公开(公告)号：US20050258280A1

公开(公告)日：2005-11-24

申请号：US11118373

申请日：2005-05-02

申请人： Keiichi Goto ,  Makoto Kawai ,  Kenji Satoh

发明人： Keiichi Goto ,  Makoto Kawai ,  Kenji Satoh

IPC分类号： H05H1/46 ,  B05B1/18 ,  B05B3/04 ,  C23C8/36 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  B05B1/185 ,  C23C8/36 ,  H01L21/3065

摘要： There is disclosed a shower plate 1, wherein the shower plate has a plurality of holes 3 for inserting the head of the fastening member and holes 4 for fitting the head are formed integrally along a concentric circle in the outside region of the gas feeding holes 2 on a side facing the supporting member, each hole for fitting extending in one direction of the concentric circle from each hole for insertion, each hole for fitting has a groove portion 4b through which the shank of the fastening member is to pass and a fitting portion 4a which is wider than the groove portion and in which the head of the fastening member is to be fitted, and the head of the fastening member fixed in the supporting member is inserted into the hole for insertion of the shower plate and the shower plate is turned so that the head of the fastening member is fitted in the fitting portion, and thereby the shower plate is supported by the supporting member without exposure of the fastening member. There can be provided a shower plate for a plasma processing apparatus, wherein effective diameter is large enough, contamination of a substrate to be treated can be prevented, it is easy to manufacture, and it is easy to fix to a supporting member.

摘要翻译： 公开了一种喷淋板1，其中喷淋板具有用于插入紧固部件的头部的多个孔3，用于安装头部的孔4沿气体供给孔2的外部区域中的同心圆一体地形成 在面对支撑构件的一侧，每个孔用于从每个孔插入同心圆的一个方向延伸，每个用于装配的孔具有凹槽部分4b，紧固构件的柄将穿过该槽部分4b和配件 部分4a，其宽于凹槽部分，并且紧固构件的头部将被装配在其中，并且固定在支撑构件中的紧固构件的头部插入到用于插入淋浴板和淋浴器的孔中 板的转动使得紧固件的头部装配在装配部分中，从而淋浴板由支撑件支撑而不暴露紧固件。 可以提供一种用于等离子体处理装置的喷淋板，其中有效直径足够大，可以防止待处理基板的污染，易于制造，并且易于固定到支撑构件。

公开(公告)号：US08268700B2

公开(公告)日：2012-09-18

申请号：US12153160

申请日：2008-05-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.

摘要翻译： 公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中 从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。 并且基于化学机械抛光将SOI层的表面抛光10至50nm。 可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

公开(公告)号：US08030118B2

公开(公告)日：2011-10-04

申请号：US11976021

申请日：2007-10-19

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L21/00

CPC分类号： H01L31/068 ,  H01L31/022466 ,  H01L31/1884 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

公开(公告)号：US20110104871A1

公开(公告)日：2011-05-05

申请号：US12934788

申请日：2009-04-10

申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

公开(公告)号：US07879175B2

公开(公告)日：2011-02-01

申请号：US12078276

申请日：2008-03-28

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： B32B38/10

CPC分类号： H01L21/76254 ,  C23C14/48

摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.

摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。 将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理 硅基板10，用于表面清洁或表面活化。 经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从 待转移的硅衬底的体积13。 将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

公开(公告)号：US20100311221A1

公开(公告)日：2010-12-09

申请号：US12805582

申请日：2010-08-06

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.

摘要翻译： 将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 氢离子注入，形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。 此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。 可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

公开(公告)号：US20100244182A1

公开(公告)日：2010-09-30

申请号：US12685194

申请日：2010-01-11

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L21/76256

摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

摘要翻译： 为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合， 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理 温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

公开(公告)号：US20100227452A1

公开(公告)日：2010-09-09

申请号：US12161819

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603

摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

摘要翻译： 将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时， 晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。