公开(公告)号：US20110104871A1

公开(公告)日：2011-05-05

申请号：US12934788

申请日：2009-04-10

申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

公开(公告)号：US20100244182A1

公开(公告)日：2010-09-30

申请号：US12685194

申请日：2010-01-11

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L21/76256

摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

摘要翻译： 为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合， 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理 温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

公开(公告)号：US20120126362A1

公开(公告)日：2012-05-24

申请号：US13320663

申请日：2010-05-25

申请人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/268

摘要： A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded.

摘要翻译： 通过以下步骤获得在蓝宝石衬底的表面上或上方具有半导体膜的结合SOS衬底：从半导体衬底的表面注入离子以形成离子注入层的步骤; 至少活化离子已被植入的表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材以形成粘合体; 以及将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到所述半导体衬底的离子注入层，以使所述离子注入层的界面脆化，同时将所述接合体保持在高于 键合半导体衬底和蓝宝石衬底的表面。

公开(公告)号：US20120119323A1

公开(公告)日：2012-05-17

申请号：US13320655

申请日：2010-05-25

申请人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L21/762 ,  H01L29/02

CPC分类号： H01L21/76254 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/268

摘要： A method of making bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate.

摘要翻译： 一种通过从半导体衬底的表面注入离子以形成离子注入层来在蓝宝石衬底上或上方制造具有半导体膜的结合SOS衬底的方法; 激活蓝宝石衬底和离子已被植入的半导体衬底之一的至少一个表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材。 并将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到半导体衬底的离子注入层，使得离子注入层的界面在接合体的温度下脆性高于表面 以将半导体膜转移到蓝宝石衬底。

公开(公告)号：US08563401B2

公开(公告)日：2013-10-22

申请号：US13127257

申请日：2009-11-11

申请人： Shoji Akiyama ,  Atsuo Ito

发明人： Shoji Akiyama ,  Atsuo Ito

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface 9 or the breakage of a bonded wafer.Provided is a method for manufacturing an SOI substrate 8 by forming an SOI layer 4 on a surface of a transparent insulating substrate 3, the method comprising, in the following order, implanting ions into a silicon wafer 5 or a silicon wafer 5 with an oxide film 7 from a surface thereof so as to form an ion-implanted layer 2; subjecting at least one of the surface of the transparent insulating substrate and the surface of the ion-implanted silicon wafer or the silicon wafer with an oxide film to a surface activation treatment; bonding together the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 and the transparent insulating substrate 3; subjecting the bonded wafer to a heat treatment at 150° C. or higher but not higher than 350° C. so as to obtain a laminate 6; and irradiating visible light at a side of the transparent insulating substrate 3 of the laminate 6 toward the ion-implanted layer 2 of the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 to embrittle an interface of the ion-implanted layer 2 and transfer a silicon thin film to the transparent insulating substrate 3 so that the SOI layer 4 can be formed.

摘要翻译： 提供了一种能够有效且有效地脆化离子注入层的界面而不会导致接合面9分离或者接合晶片的断裂的SOI衬底的制造方法。提供了一种制造SOI衬底的方法 如图8所示，通过在透明绝缘基板3的表面上形成SOI层4，该方法包括以下顺序，从其表面将离子注入到具有氧化物膜7的硅晶片5或硅晶片5中，以便 形成离子注入层2; 将透明绝缘基板的表面和离子注入硅晶片或硅晶片的表面中的至少一个用氧化膜进行表面活化处理; 将硅晶片5或硅晶片5与氧化膜7和透明绝缘基板3接合在一起; 使接合晶片在150℃以上且不高于350℃进行热处理，得到层叠体6; 并且利用氧化膜7将层叠体6的透明绝缘性基板3侧的可见光朝向硅晶片5或硅晶片5的离子注入层2照射，从而使离子注入层2的界面脆化 并将硅薄膜转移到透明绝缘基板3，从而可以形成SOI层4。

公开(公告)号：US20110244655A1

公开(公告)日：2011-10-06

申请号：US13127257

申请日：2009-11-11

申请人： Shoji Akiyama ,  Atsuo Ito

发明人： Shoji Akiyama ,  Atsuo Ito

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface 9 or the breakage of a bonded wafer.Provided is a method for manufacturing an SOI substrate 8 by forming an SOI layer 4 on a surface of a transparent insulating substrate 3, the method comprising, in the following order, implanting ions into a silicon wafer 5 or a silicon wafer 5 with an oxide film 7 from a surface thereof so as to form an ion-implanted layer 2; subjecting at least one of the surface of the transparent insulating substrate and the surface of the ion-implanted silicon wafer or the silicon wafer with an oxide film to a surface activation treatment; bonding together the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 and the transparent insulating substrate 3; subjecting the bonded wafer to a heat treatment at 150° C. or higher but not higher than 350° C. so as to obtain a laminate 6; and irradiating visible light at a side of the transparent insulating substrate 3 of the laminate 6 toward the ion-implanted layer 2 of the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 to embrittle an interface of the ion-implanted layer 2 and transfer a silicon thin film to the transparent insulating substrate 3 so that the SOI layer 4 can be formed.

摘要翻译： 提供了一种能够有效且有效地脆化离子注入层的界面而不会导致接合面9分离或者接合晶片的断裂的SOI衬底的制造方法。提供了一种制造SOI衬底的方法 如图8所示，通过在透明绝缘基板3的表面上形成SOI层4，该方法包括以下顺序，从其表面将离子注入到具有氧化物膜7的硅晶片5或硅晶片5中，以便 形成离子注入层2; 将透明绝缘基板的表面和离子注入硅晶片或硅晶片的表面中的至少一个用氧化膜进行表面活化处理; 将硅晶片5或硅晶片5与氧化膜7和透明绝缘基板3接合在一起; 使接合晶片在150℃以上且不高于350℃进行热处理，得到层叠体6; 并且利用氧化膜7将层叠体6的透明绝缘性基板3侧的可见光朝向硅晶片5或硅晶片5的离子注入层2照射，从而使离子注入层2的界面脆化 并将硅薄膜转移到透明绝缘基板3，从而可以形成SOI层4。

公开(公告)号：US20080305318A1

公开(公告)日：2008-12-11

申请号：US12163785

申请日：2008-06-27

申请人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

发明人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

IPC分类号： B32B27/32 ,  H01L21/30

CPC分类号： H01L21/76256 ,  C30B29/06 ,  C30B33/00 ,  H01L27/12

摘要： In a manufacturing method of manufacturing a silicon on insulator (SOI) wafer, a single crystal silicon whose surface is an N region on an outer side of an OSF region, is grown and sliced to fabricate an N region single crystal silicon. An ion injection layer is formed within the N region single crystal silicon wafer by injecting a hydrogen ion or a rare gas ion from a surface of the N region single crystal silicon wafer; the ion injection surface of the N region single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone. The ion injection surface is bonded to the surface of the transparent insulation substrate by bringing them into close contact with each other at room temperature. An SOI layer is formed by mechanically peeling the single crystal silicon wafer.

摘要翻译： 在制造绝缘体上硅（SOI）晶片的制造方法中，生长表面为OSF区域外侧的N区的单晶硅，并切片以制造N区单晶硅。 通过从N区域单晶硅晶片的表面注入氢离子或稀有气体离子，在N区域单晶硅晶片内形成离子注入层; 使用等离子体和/或臭氧处理N区域单晶硅晶片的离子注入表面和/或透明绝缘衬底的表面。 离子注入表面通过在室温下彼此紧密接触而结合到透明绝缘基板的表面。 通过机械剥离单晶硅晶片形成SOI层。

公开(公告)号：US08236667B2

公开(公告)日：2012-08-07

申请号：US12163743

申请日：2008-06-27

申请人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

发明人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

IPC分类号： H01L21/30

CPC分类号： H01L27/1203 ,  H01L21/76254 ,  H01L21/84 ,  H01L29/78603

摘要： Ion injection is performed to a single crystal silicon wafer to form an ion injection layer, with the ion injection surface of the single crystal silicon wafer and/or the surface of the transparent insulation substrate are/is processed using plasma and/or ozone. The ion injection surface of the single crystal silicon wafer and the surface of the transparent insulation substrate are bonded to each other by bringing them into close contact with each other at room temperature. A silicon on insulator (SOI) wafer is obtained by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer, to form an SOI layer on the transparent insulation substrate, and thermal processing for flattening the SOI layer surface is performed to the SOI wafer, under an atmosphere of an inert gas, a hydrogen gas, and a mixture gas of them.

摘要翻译： 对单晶硅晶片进行离子注入以形成离子注入层，使用等离子体和/或臭氧处理单晶硅晶片的离子注入表面和/或透明绝缘基板的表面。 单晶硅晶片的离子注入表面和透明绝缘基板的表面通过在室温彼此紧密接触而彼此接合。 通过对单晶硅晶片进行机械剥离而对离子注入层产生冲击，在透明绝缘基板上形成SOI层，进行SOI层表面的平坦化处理，得到绝缘体上硅（SOI）晶片 在惰性气体，氢气和它们的混合气体的气氛下，向SOI晶片。

公开(公告)号：US08703580B2

公开(公告)日：2014-04-22

申请号：US12163764

申请日：2008-06-27

申请人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

发明人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L27/1203 ,  H01L29/78603

摘要： In a manufacturing method for manufacturing a silicon on insulator (SOI) wafer, an ion injection layer is formed within the wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the single crystal silicon wafer, the ion injection surface of the single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone, the ion injection surface of the single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s), and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer.

摘要翻译： 在制造绝缘体上硅（SOI）晶片的制造方法中，通过从单晶硅晶片的表面注入氢离子或稀有气体离子，在晶片内形成离子注入层，离子注入层 使用等离子体和/或臭氧处理单晶硅晶片和/或透明绝缘基板的表面，通过使单晶硅晶片的离子注入表面接近透明绝缘基板的表面， 在室温下彼此接触，将处理后的表面作为接合表面，并且通过对单晶硅晶片进行机械剥离而对透明绝缘基板形成冲击，形成SOI层 层。

公开(公告)号：US20140014182A1

公开(公告)日：2014-01-16

申请号：US14008919

申请日：2012-05-31

申请人： Tomoyoshi Furihata ,  Atsuo Ito ,  Hyung-Bae Kim ,  Minoru Igarashi ,  Masakatsu Hotta ,  Tsutomu Nakamura

发明人： Tomoyoshi Furihata ,  Atsuo Ito ,  Hyung-Bae Kim ,  Minoru Igarashi ,  Masakatsu Hotta ,  Tsutomu Nakamura

IPC分类号： H01L31/048 ,  H01L31/18 ,  H01L31/052

CPC分类号： H01L31/0481 ,  B32B17/10036 ,  B32B17/10091 ,  B32B17/10302 ,  B32B17/10798 ,  B32B2307/302 ,  B32B2307/412 ,  B32B2307/558 ,  B32B2307/704 ,  B32B2307/712 ,  B32B2457/00 ,  H01L31/0488 ,  H01L31/052 ,  H01L31/0543 ,  H01L31/0547 ,  Y02B10/12 ,  Y02E10/52

摘要： The present invention relates to a solar cell module which is characterized in that: a light-transmitting elastomer member and a solar cell element are arranged in a space between a panel of a transparent member upon which sunlight is incident and a panel of a thermally conductive member which is arranged on the side opposite to the sunlight incidence side in such a manner that the light-transmitting elastomer member is closer to the sunlight incidence side; and the solar cell element is pressed by the light-transmitting elastomer member toward the panel of a thermally conductive member so that the solar cell element is compression bonded thereto. This solar cell module is most suitable as a solar cell module that has excellent heat dissipation of a cell, the temperature of which is increased due to sunlight or a hot spot, and a structure that suppresses the production cost.

摘要翻译： 太阳能电池模块技术领域本发明涉及一种太阳能电池模块，其特征在于：透光性弹性体部件和太阳能电池元件配置在入射了太阳光的透明部件的面板和导热性板 构件，其布置在与太阳光入射侧相对的一侧，使得透光弹性体构件更靠近太阳光入射侧; 并且太阳能电池元件被透光弹性体部件压向导热部件的面板，使得太阳能电池元件被压接在其上。 该太阳能电池模块最适合作为太阳能电池模块，其具有由于阳光或热点而导致温度升高的电池的良好散热性，以及抑制生产成本的结构。