公开(公告)号：US20150097254A1

公开(公告)日：2015-04-09

申请号：US14476970

申请日：2014-09-04

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A memory element having a layer structure, the layer structure includes: a memory layer whose magnetization direction is changed in accordance with information; a magnetization-fixed layer having magnetization perpendicular to a film surface to be a basis of the information stored in the memory layer; and an intermediate layer made of a non-magnetic material, disposed between the memory layer and the magnetization-fixed layer, wherein at least a periphery of the memory layer is covered with a magnetic material through a non-magnetic material among the layer structure.

Abstract translation: 一种具有层结构的存储元件，该层结构包括：其磁化方向根据信息改变的存储层; 具有垂直于膜表面的磁化的磁化固定层作为存储在存储层中的信息的基础; 以及设置在所述存储层和所述磁化固定层之间的由非磁性材料制成的中间层，其中所述存储层的至少周边通过所述层结构中的非磁性材料用磁性材料覆盖。

公开(公告)号：US20140374752A1

公开(公告)日：2014-12-25

申请号：US14478642

申请日：2014-09-05

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/10 ,  H01L27/22

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

Abstract: A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.

Abstract translation: 存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础 所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层 。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

公开(公告)号：US20130302913A1

公开(公告)日：2013-11-14

申请号：US13922752

申请日：2013-06-20

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

IPC: H01L43/12

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/307 ,  H01L43/08

Abstract: A method of manufacturing a storage element by forming a magnetic layer; and forming a tunnel barrier layer on the magnetic layer, wherein, n the forming a tunnel barrier layer, the tunnel barrier layer is formed to a predetermined thickness in at least two steps in a divided manner.

Abstract translation: 一种通过形成磁性层来制造存储元件的方法; 以及在所述磁性层上形成隧道阻挡层，其中，在形成隧道势垒层时，所述隧道势垒层以分开的方式至少在两个步骤中形成为预定厚度。

公开(公告)号：US20130163317A1

公开(公告)日：2013-06-27

申请号：US13680669

申请日：2012-11-19

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C7/04

Abstract: There is provided a memory element having a layered structure, including a memory layer having magnetization perpendicular to a film face in which a magnetization direction is changed corresponding to information, and including a Co—Fe—B magnetic layer and at least on non-magnetic layer; the magnetization direction being changed by flowing a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to the film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, further including a laminated structure where an oxide layer, the Co—Fe—B magnetic layer and the non-magnetic layer are laminated is formed.

Abstract translation: 提供了一种具有分层结构的存储元件，包括具有垂直于膜面的磁化的存储层，其中磁化方向根据信息而改变，并且包括Co-Fe-B磁性层和至少在非磁性 层; 通过使分层结构的叠层方向上的电流流动来改变磁化方向，以将信息记录在存储层中，具有垂直于胶片面的磁化的磁化固定层成为存储在存储层中的信息的基础 以及由非磁性材料形成并设置在所述存储层和所述磁化固定层之间的中间层，还包括其中氧化物层，所述Co-Fe-B磁性层和所述非磁性固定层的层叠结构， 形成磁性层。

公开(公告)号：US20130163315A1

公开(公告)日：2013-06-27

申请号：US13675416

申请日：2012-11-13

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: G11C11/161

Abstract: A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer. The non-magnetic layer includes Cr. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Abstract translation: 存储元件包括分层结构。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于膜面的磁化，其中磁化方向根据信息而改变，并且通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储器中 层。 磁化固定层具有垂直于成为存储在存储层中的信息的基底的膜面的磁化，并且具有包括至少两个铁磁层和非磁性层的叠层铁钉结构。 非磁性层包括Cr。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。

公开(公告)号：USRE49364E1

公开(公告)日：2023-01-10

申请号：US16811534

申请日：2020-03-06

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L27/24 ,  H01L43/02 ,  G11B5/39 ,  G01R33/09 ,  H01L43/10 ,  H01L29/82

Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

公开(公告)号：US10937955B2

公开(公告)日：2021-03-02

申请号：US16853157

申请日：2020-04-20

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02

Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

公开(公告)号：US10580471B2

公开(公告)日：2020-03-03

申请号：US16408840

申请日：2019-05-10

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01F10/32 ,  G11C11/155 ,  H01L43/08 ,  H01L27/22 ,  G11B5/39 ,  H01L43/02 ,  G11C11/15

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

公开(公告)号：US10475474B2

公开(公告)日：2019-11-12

申请号：US15997868

申请日：2018-06-05

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11B5/31 ,  G11B5/39 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32 ,  H01L43/02 ,  G11B5/127 ,  H01L23/528 ,  H01L27/22 ,  B82Y25/00 ,  H01F10/12

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

公开(公告)号：US10374146B2

公开(公告)日：2019-08-06

申请号：US15646544

申请日：2017-07-11

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.