SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

    公开(公告)号:US20210098040A1

    公开(公告)日:2021-04-01

    申请号:US16953851

    申请日:2020-11-20

    Abstract: Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

    公开(公告)号:US20210020216A1

    公开(公告)日:2021-01-21

    申请号:US16912832

    申请日:2020-06-26

    Inventor: Yohei SHIOKAWA

    Abstract: A magnetoresistance effect element where asymmetry of an inversion current due to a leakage magnetic field from a magnetization fixed layer is decreased. A magnetoresistance effect element includes a first ferromagnetic layer whose magnetization direction is variable, a second ferromagnetic layer whose magnetization direction is fixed, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer which are laminated in a first direction which is a lamination direction, where both the first ferromagnetic layer and the second ferromagnetic layer are curved so that central portions of the first and second ferromagnetic layers protrude with respect to outer circumferential portions in the first direction, and protruding directions of the central portions are opposite to each other so that a distance between the outer circumferential portions is larger than a distance between the central portions in the first direction.

    SPIN-ORBIT-TORQUE MAGNETIZATION ROTATIONAL ELEMENT AND SPIN-ORBIT-TORQUE MAGNETORESISTANCE EFFECT ELEMENT

    公开(公告)号:US20200335691A1

    公开(公告)日:2020-10-22

    申请号:US16807704

    申请日:2020-03-03

    Abstract: A spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit-torque wiring and a first ferromagnetic layer laminated on the spin-orbit-torque wiring in a first direction, wherein the spin-orbit-torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.

    SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR PRODUCING SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT

    公开(公告)号:US20190386207A1

    公开(公告)日:2019-12-19

    申请号:US16547670

    申请日:2019-08-22

    Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.

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