公开(公告)号：USRE41867E1

公开(公告)日：2010-10-26

申请号：US12397560

申请日：2009-03-04

申请人： Takumi Yamaguchi

发明人： Takumi Yamaguchi

IPC分类号： H01L31/103

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semiconductor substrate; the unit pixels include a photodiode, MOS (metal-oxide-semiconductor) transistors and a first device-isolation portion, the peripheral circuit region includes a second device-isolation portion for isolating devices in the driving circuit; wherein each of the first device-isolation portion and the second device-isolation portion is at least one portion selected from an electrically insulating film formed on the substrate in order not to erode the substrate, a electrically insulating film formed on the substrate so as to erode the substrate to a depth ranging from 1 nm to 50 nm, and an impurity diffusion region formed within the substrate. The MOS image pick-up device is incorporated in a camera. Thereby, devices are isolated between MOS transistors, and noise caused by leakage current is decreased.

摘要翻译： 一种MOS图像拾取装置，包括半导体衬底，通过排列多个单位像素而形成在半导体衬底上的成像区域和包括用于操作形成在半导体衬底上的成像区域的驱动电路的外围电路区域; 单位像素包括光电二极管，MOS（金属氧化物半导体）晶体管和第一器件隔离部分，外围电路区域包括用于隔离驱动电路中的器件的第二器件隔离部分; 其中，所述第一器件隔离部分和所述第二器件隔离部分中的每一个是选自形成在所述衬底上的电绝缘膜中的至少一个部分，以便不侵蚀所述衬底;形成在所述衬底上的电绝缘膜，以便 将衬底侵蚀到1nm至50nm的深度，以及形成在衬底内的杂质扩散区。 MOS图像拾取装置并入相机中。 因此，器件在MOS晶体管之间被隔离，并且由漏电流引起的噪声降低。

公开(公告)号：US07759679B2

公开(公告)日：2010-07-20

申请号：US10536962

申请日：2004-09-13

申请人： Yuuichi Inaba ,  Masahiro Kasano ,  Shinji Yoshida ,  Takumi Yamaguchi

发明人： Yuuichi Inaba ,  Masahiro Kasano ,  Shinji Yoshida ,  Takumi Yamaguchi

IPC分类号： H01L29/10

CPC分类号： H01L27/14685 ,  G02B5/201 ,  G02B5/285 ,  H01L27/14621 ,  H04N5/2254

摘要： A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.

摘要翻译： 固态成像装置包括选择性地传输入射光的滤色器。 滤色器包括两个λ/ 4多层膜和夹在两个λ/ 4多层膜之间的绝缘层。 这里，λ/ 4多层膜由多个电介质层构成，绝缘层的光学厚度不为λ/ 4。 由于该滤色器具有较小的厚度，所以固态成像装置具有较小的尺寸。

公开(公告)号：US07706129B2

公开(公告)日：2010-04-27

申请号：US12300619

申请日：2007-05-25

申请人： Eri Hirose ,  Yasuyuki Ito ,  Satomi Onishi ,  Mitsuru Iwai ,  Takumi Yamaguchi ,  Ichiro Aoki ,  Kouji Moriyama ,  Yoshiki Hashimoto

发明人： Eri Hirose ,  Yasuyuki Ito ,  Satomi Onishi ,  Mitsuru Iwai ,  Takumi Yamaguchi ,  Ichiro Aoki ,  Kouji Moriyama ,  Yoshiki Hashimoto

IPC分类号： H01G9/00

CPC分类号： H01G11/28 ,  H01G11/74 ,  H01G11/84 ,  H01G11/86 ,  Y02E60/13 ,  Y10T29/417

摘要： In an electric double-layer capacitor, resistance of a polarizable electrode layer is reduced and gas generation inside a case is suppressed in an attempt to improve reliability. On that account, an electric double-layer capacitor is provided, which is obtained by housing in a case, together with a driving electrolyte, a capacitor element wound with a separator interposed between electrodes being paired anode and cathode electrodes in each of which polarizable electrode layers are formed on and lead wires are fixed to both sides of a current collector made of metallic foil, such that the polarizable electrode layers are opposed to each other. Further, an electric double-layer capacitor is provided in which the lead wire is fixed to a polarizable-electrode-layer-removed section on the electrode where the polarizable electrode layer has been removed, and an area of the polarizable-electrode-layer-removed section is not smaller than 1 and not larger than 2.0 when a project area of a portion where the lead wire is connected with the current collector is set to 1.

摘要翻译： 在双电层电容器中，为了提高可靠性，可以降低极化电极层的电阻，并抑制气体产生。 因此，提供了一种双电层电容器，其通过壳体与驱动电解质一起容纳电容器元件而获得，所述电容器元件被插入电极之间的间隔件，所述电极元件设置在成对的阳极和阴极电极之间，其中每个极化电极 在金属箔的集电体的两侧固定引线，使可极化电极层相对。 此外，提供一种双电层电容器，其中引线固定到已去除可极化电极层的电极上的可极化电极层去除部分上，并且可极化电极层 - 当引线与集电器连接的部分的投影区域设定为1时，取出部分不小于1且不大于2.0。

公开(公告)号：US20090021626A1

公开(公告)日：2009-01-22

申请号：US12233068

申请日：2008-09-18

申请人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H04N5/335

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US20080303108A1

公开(公告)日：2008-12-11

申请号：US12187720

申请日：2008-08-07

申请人： Masahiro Kasano ,  Yuichi Inaba ,  Takumi Yamaguchi

发明人： Masahiro Kasano ,  Yuichi Inaba ,  Takumi Yamaguchi

IPC分类号： H01L31/0232

CPC分类号： G02B5/201 ,  G01J3/513 ,  G02B5/285 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02165

摘要： Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.

摘要翻译： 光电转换器被二维布置在半导体衬底中。 在半导体基板和光电转换器上依次形成平坦化层，遮光膜，进一步的平坦化层和聚光透镜。 遮光膜在对应于光电转换装置的位置处具有孔。 透射光的红色，绿色或蓝色波长分量的多层干涉滤光片设置在孔中。

公开(公告)号：US07436012B2

公开(公告)日：2008-10-14

申请号：US11335533

申请日：2006-01-20

申请人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US20070122935A1

公开(公告)日：2007-05-31

申请号：US11602179

申请日：2006-11-21

申请人： Masahiro Kasano ,  Yuichi Inaba ,  Keisuke Tanaka ,  Takumi Yamaguchi

发明人： Masahiro Kasano ,  Yuichi Inaba ,  Keisuke Tanaka ,  Takumi Yamaguchi

IPC分类号： H01L21/00

CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

摘要： A manufacturing method of a solid-state imaging device prevents generation of a space due to insufficient filling of a conductive material. Materials constituting a multilayer film 41 are sequentially deposited on a semiconductor substrate, and portions respectively included in a plug formation intended region and a surrounding region that surrounds the plug formation intended region are removed from the deposited multilayer film 41. Next, the plug formation intended region and the surrounding region from which the portions have been removed is refilled with a single insulating material, and a hole is formed on the plug formation intended region by etching. Then, the formed hole is filled with a conductive material to therefore form a plug.

摘要翻译： 固态成像装置的制造方法防止由于导电材料的填充不充分而产生空间。 构成多层膜41的材料依次沉积在半导体衬底上，并且从沉积的多层膜41中去除分别包含在插塞形成预期区域中的部分和围绕插塞形成区域的周围区域。 接下来，使用单个绝缘材料重新填充已经去除了部分的插塞形成预期区域和周围区域，并且通过蚀刻在插塞形成预期区域上形成孔。 然后，形成的孔填充有导电材料，从而形成插头。

公开(公告)号：US07199411B2

公开(公告)日：2007-04-03

申请号：US10930814

申请日：2004-09-01

申请人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

发明人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC分类号： H01L31/062

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

摘要翻译： 在硅基板上形成固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。 固态成像装置包括：对于每个像素，成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度 杂质密度最大的第一导电类型。

公开(公告)号：US20070020795A1

公开(公告)日：2007-01-25

申请号：US10568961

申请日：2005-01-07

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Shinji Yoshida

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Shinji Yoshida

IPC分类号： H01L21/00

CPC分类号： H01L27/1463 ,  H01L21/76205 ,  H01L27/14689

摘要： In a method for manufacturing a solid-state imaging device of the present invention, a pad insulting film 2 made of an oxide film and an anti-oxidizing film 3 made of a nitride film are deposited on a n-type semiconductor substrate 1. Then, an opening 4 is formed to expose an element isolation formation region of the semiconductor substrate 1. Next, an anti-oxidizing film (not shown) for burying the opening 4 is formed on the substrate and anisotropic etching is performed to form a sidewall 5. Subsequently, a trench 6 is formed using the anti-oxidizing film 3 and the sidewall 5 as a mask. Then, a p-type impurity is implanted into a part of the semiconductor substrate 1 which is exposed at the side face of the trench 6 and a thermal oxide film is formed in the surface portion of the trench 6 in the semiconductor substrate 1. Thereafter, the trench 6 is buried with a burying film 8.

摘要翻译： 在本发明的固体摄像装置的制造方法中，在n型半导体基板1上沉积由氧化膜构成的焊盘绝缘膜2和由氮化物膜构成的抗氧化膜3。 然后，形成开口4以露出半导体衬底1的元件隔离形成区域。 接下来，在基板上形成用于埋入开口4的抗氧化膜（未示出），并执行各向异性蚀刻以形成侧壁5。 随后，使用抗氧化膜3和侧壁5作为掩模形成沟槽6。 然后，将p型杂质注入到在沟槽6的侧面露出的半导体衬底1的一部分中，并且在半导体衬底1中的沟槽6的表面部分中形成热氧化膜。 此后，沟槽6被埋入掩埋膜8。

公开(公告)号：US20060205107A1

公开(公告)日：2006-09-14

申请号：US10536962

申请日：2004-09-13

申请人： Yuuichi Inaba ,  Masahiro Kasano ,  Shinji Yoshida ,  Takumi Yamaguchi

发明人： Yuuichi Inaba ,  Masahiro Kasano ,  Shinji Yoshida ,  Takumi Yamaguchi

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L27/14685 ,  G02B5/201 ,  G02B5/285 ,  H01L27/14621 ,  H04N5/2254

摘要： A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.

摘要翻译： 固态成像装置包括选择性地传输入射光的滤色器。 滤色器包括两个λ/ 4多层膜和夹在两个λ/ 4多层膜之间的绝缘层。 这里，每个λ/ 4多层膜由多个电介质层构成，绝缘层的光学厚度不是λ/ 4。 由于该滤色器具有较小的厚度，所以固态成像装置具有较小的尺寸。