摘要:
A manufacturing method of a solid-state imaging device prevents generation of a space due to insufficient filling of a conductive material. Materials constituting a multilayer film 41 are sequentially deposited on a semiconductor substrate, and portions respectively included in a plug formation intended region and a surrounding region that surrounds the plug formation intended region are removed from the deposited multilayer film 41. Next, the plug formation intended region and the surrounding region from which the portions have been removed is refilled with a single insulating material, and a hole is formed on the plug formation intended region by etching. Then, the formed hole is filled with a conductive material to therefore form a plug.
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要:
A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.
摘要:
A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.
摘要:
An object of the present invention is to provide a solid-state image sensor including a filter membrane that has excellent light resistance and can be thinned. A solid-state image sensor 1 having a plurality of pixels, wherein each of the plurality of pixels includes a filter membrane 21 for transmitting light of a predetermined color, and a photoelectric conversion unit 17 for converting the light transmitted through the filter membrane 21 into a charge; the filter membrane 21 is a single layer film composed of an inorganic material; and an optical thickness of the single layer film is smaller than a thickness equivalent to one half of a wavelength of the predetermined color, by a thickness corresponding to an amount of the light of the predetermined color absorbed by the inorganic material.
摘要:
An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.
摘要:
A solid-state imaging device 101 is composed of a transparent film 204, a color filter 205, a planarizing film 207, and a plurality of microlenses 208 that are sequentially formed on a semiconductor substrate 201. A photodiode 202 is formed in a surface of the semiconductor substrate 201 that is closer to the transparent film 204. A light shielding film 203 is formed in a surface of the transparent film 204 that is closer to the semiconductor substrate 201. Color filters 205 respectively corresponding to two adjacent pixels are partitioned by a light shielding wall 206. The light shielding wall 206 is a λ/4 multilayer film that reflects visible light.