摘要:
A booster circuit generates a boosted output by boosting a low voltage output supplied as a target to be boosted and feeds back a part of the boosted output, an output by the booster circuit itself, to the booster circuit as operation energy. An auxiliary booster circuit outputs start-up energy generated based on a low voltage output to the booster circuit as start-up energy that is necessary for starting up the booster circuit.
摘要:
When switching a mode between an imaging mode imaging an object and an adjustment mode adjusting an image produced by the imaging, in accordance with the switched mode, one photometric region is selected from at least two photometric regions to an image signal obtained from incident light, and exposure of the incident light is controlled on the selected photometric region based on photometric information, thereby achieving accuracy in adjusting the image produced by imaging an object by preventing effect on exposure due to dispersion in field angle.
摘要:
If a projection display device includes a shifting mechanism for shifting a projection lens to adjust the direction in which the display projects an optical image, it is difficult to find suitable position where the display should be installed. Thus, the projection lens is fitted with a projection angle adjusting mechanism, which includes an adjusting dial having a scale representing the position of the lens relative to a display element. The projection display device is capable of automatically displaying on the projected optical image a scale image corresponding to the scale. The projection display also is capable of displaying on the projected optical image the position of the optical axis of the projection lens, which can be shifted by the adjusting mechanism.
摘要:
A projection display according to the present invention reduces the size of a light beam in the optical path of an illumination optics from the periphery to change the amount of light incident on a video display device and the angle of such incidence, thereby making a plurality of image brightness/contrast combinations selectable. Further, the present invention changes the revolving speed of a projection display cooling fan and the adjustment value settings for the video display device's electrical characteristics in accordance with the aperture.
摘要:
An actuator driving circuit is provided for a positive feedback amplification, through an amplifier, of a counter electromotive force generated in a stator coil of a linear actuator, for continuating a reciprocating movement of a moving element by self-oscillation of the linear actuator, and for an application of a periodic voltage to the stator coil, while the voltage is made sinusoidal if required, so as to render the driving circuit to be high in the driving efficiency and small in dimensions.
摘要:
In order to enhance the sensitivity of a nondestructive testing system, a pair of superconducting coils are disposed in the same plane such that a current flowing through the respective coils when exposed to a uniform magnetic field cancels out. As a result of this configuration, the detection coils are immune to noise, offset fields or other uniform ambient phenomena. In one embodiment, the nondestructive testing unit includes a plurality of detection coils, a SQUID having a pair of connectors for connection to the detection coils, a probe for supporting the detection coils and the SQUID in a coolant, a cryostat for supporting the probe and for keeping the coolant constant, a controller for processing a signal transmitted from the SQUID, and a display device for displaying the result of the processing. At least two detection coils are disposed in the same plane, are directly connected to the SQUID and are integrated on a semiconductor substrate.
摘要:
According to this method, before a silicon nitride (Si.sub.3 N.sub.4) layer having a thickness of about 200 nm and serving as a field oxidation (selective oxidation) mask is formed, nitrogen-doped amorphous silicon is deposited to form a silicon layer having a thickness of about 50 nm and serving as an underlying layer of the silicon nitride layer.
摘要翻译:根据该方法,在形成厚度为约200nm并用作场氧化(选择性氧化)掩模的氮化硅(Si 3 N 4)层之前,形成氮掺杂的非晶硅以形成厚度为 约50nm并用作氮化硅层的下层。
摘要:
A DC superconducting quantum interference device has a superconductive ring and a feedback modulation coil for detecting a magnetic field. A variable bias current is applied to the superconductive ring and a modulating signal is applied to the feedback modulation coil. A signal change-over circuit is provided for superposing a false signal on the modulating signal, the false signal electrically simulating the effect of an applied magnetic field to enable adjustment of the variable bias current and the modulating signal under measurement conditions. A flux locked loop circuit of the DC superconducting quantum interference device has an external input terminal or a low-frequency oscillator for supplying a low-frequency signal to the signal change-over circuit which is superposed on the modulating signal applied to the feedback modulation coil. In this manner, the conditions for adjustment and measurement are not changed thereby facilitating the adjustment so that the DC superconductive quantum interference device effectively offsets a disturbing magnetic field.
摘要:
A semiconductor device of a MOS structure having a p-type gate electrode has a gate electrode including at least two layers consisting of a boron-doped polysilicon layer and a polysilicon layer doped with boron and an inert material. This inert material is nitrogen or carbon.
摘要:
The present invention relates to a plasma apparatus, in which a plasma is generated by the use of an electron cyclotron resonance, said plasma being introduced into a sample chamber where a sample is housed through a plasma outlet window by the use of a magnetic field for use in the electron cyclotron resonance, and said sample being subjected to a film-formation or an etching, characterized by that the distribution of magnetic flux density on a surface of the sample can be improved to uniform the plasma density, whereby subjecting the sample with the film-formation of uniformly thick or a uniform etching, by disposing a magnetic field forming means capable of forming a magnetic field, wherein the magnetic flux density at the peripheral edge portion of the sample is higher than that at the central portion of the sample, on a side opposite to the plasma outlet window relatively to the sample.