公开(公告)号：US07863911B2

公开(公告)日：2011-01-04

申请号：US12006322

申请日：2007-12-31

申请人： Ying Hong ,  Wipul P. Jayasekara ,  Daniele Mauri ,  David J. Seagle

发明人： Ying Hong ,  Wipul P. Jayasekara ,  Daniele Mauri ,  David J. Seagle

IPC分类号： G01R27/08 ,  G01R31/08 ,  G01R31/02

CPC分类号： G11B5/3166 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3173 ,  G11B5/3906 ,  G11B5/3909

摘要： A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.

摘要翻译： 用于测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性的组合制造晶片和测试装置。 组合的可制造晶片和测试装置包括设置在基板上的隧道 - 磁阻，传感器层结构。 组合的可制造晶片和测试装置还包括多个部分制造的隧道 - 磁阻传感器; 部分制造的隧道 - 磁阻传感器中的至少一个设置在多个第一位置中的一个位置。 测试装置在不同于多个第一位置的第二位置处设置在基板上。 测试装置允许使用平面内隧道技术测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性。

公开(公告)号：US20090165286A1

公开(公告)日：2009-07-02

申请号：US11966106

申请日：2007-12-28

申请人： Kuok San Ho ,  Ying Hong ,  Wipul Pemsiri Jayasekara ,  Daniele Mauri

发明人： Kuok San Ho ,  Ying Hong ,  Wipul Pemsiri Jayasekara ,  Daniele Mauri

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.

摘要翻译： 一种降低传感器堆叠高度的磁阻传感器的制造方法。 该方法包括形成传感器结构，其顶部具有在Ru层上的Ru层和Ta层。 执行退火处理以设置传感器结构的钉扎层的磁化。 在完成退火处理并且不再需要Ta层之后，执行离子铣削处理以去除Ta层。

公开(公告)号：US20080285182A1

公开(公告)日：2008-11-20

申请号：US12172134

申请日：2008-07-11

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

公开(公告)号：US20050180112A1

公开(公告)日：2005-08-18

申请号：US10782208

申请日：2004-02-18

申请人： Daniele Mauri ,  Alexander Zeltser

发明人： Daniele Mauri ,  Alexander Zeltser

IPC分类号： G11B5/39 ,  H05K7/20

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： The pinned layer structure in a self-pinned spin valve is deposited using a DC aligning field. The deposition of each of the Reference and Keeper layer in the pinned layer occurs within two different polarity DC aligning fields. Thus, a first portion of the Reference layer is deposited with a DC alignment field of a first polarity, i.e., either positive or negative, and a second portion of the Reference layer is deposited in a DC alignment field of opposite polarity. The Keeper layer is similarly deposited, with a first portion of the Keeper layer deposited in a first polarity DC alignment field and the second portion deposited in the opposite polarity DC alignment field. By splitting the deposition of the Reference and Keeper layers into portions using DC aligning fields the pinned layer structure is highly repeatable while providing a good thickness uniformity of the structure.

摘要翻译： 使用直流对准场沉积自锁自旋阀中的钉扎层结构。 参考和守护层中的每一个在被钉扎层中的沉积发生在两个不同极性的直流对准场内。 因此，参考层的第一部分被沉积有第一极性的DC对准场，即正或负，并且参考层的第二部分沉积在相反极性的DC对准场中。 Keeper层类似地沉积，Keeper层的第一部分沉积在第一极性DC对准场中，而第二部分沉积在相反极性的DC对准场中。 通过使用直流对准场将参考和守恒分层的沉积分裂成部分，钉扎层结构是高度可重复的，同时提供了良好的结构厚度均匀性。

公开(公告)号：US06920021B2

公开(公告)日：2005-07-19

申请号：US10229248

申请日：2002-08-26

申请人： Daniele Mauri ,  Tao Pan

发明人： Daniele Mauri ,  Tao Pan

IPC分类号： G11B5/012 ,  G11B5/31 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3903 ,  G11B2005/3996

摘要： In fabricating the magnetic head, a first magnetic shield layer (S1) is fabricated upon a substrate base, followed by a thin first insulation layer (G1). A photoresist mask is fabricated upon the G1 layer and electrical lead recesses are milled through the G1 layer and into the S1 layer. An insulation layer is deposited into the electrical lead recesses, followed by the fabrication of electrical leads within the recesses. The photoresist is removed and a magnetoresistive (MR) sensor is subsequently fabricated on top of the G1 layer, such that portions of the MR sensor are fabricated on top of portions of the electrical leads. Hard bias elements are then fabricated at outboard edges of the MR sensor. A thin second insulation layer (G2) is fabricated on top of the MR sensor and hard bias elements, and a second magnetic shield layer (S2) is fabricated on top of the G2 layer.

摘要翻译： 在制造磁头时，在衬底基底上制造第一磁屏蔽层（S1），随后是薄的第一绝缘层（G 1）。 在G 1层上制造光致抗蚀剂掩模，并且将电引线凹槽通过G 1层研磨并进入S1层。 绝缘层沉积到电引线凹槽中，随后在凹槽内制造电引线。 去除光致抗蚀剂，随后在G 1层的顶部上制造磁阻（MR）传感器，使得MR传感器的部分制造在电引线的部分的顶部。 然后在MR传感器的外侧边缘处制造硬偏置元件。 在MR传感器和硬偏置元件的顶部制造薄的第二绝缘层（G 2），并且在G 2层的顶部上制造第二磁屏蔽层（S 2）。

公开(公告)号：US6088204A

公开(公告)日：2000-07-11

申请号：US348551

申请日：1994-12-01

申请人： Robin Frederick Charles Farrow ,  Ronald Franklin Marks ,  Daniele Mauri ,  Stuart Stephen Papworth Parkin

发明人： Robin Frederick Charles Farrow ,  Ronald Franklin Marks ,  Daniele Mauri ,  Stuart Stephen Papworth Parkin

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/012 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3903 ,  G01R33/09 ,  G11B5/3967 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3103 ,  G11B5/3109 ,  G11B5/3163

摘要： A magnetoresistive sensor for use as the read sensor in magnetic recording disk drives uses a permalloy (approximate composition of Ni.sub.81,Fe.sub.19) sensor layer with a magnetoresistance coefficient significantly greater than prior art permalloy sensor layers for a range of permalloy film thicknesses. The permalloy film is deposited on a substrate, such as alumina, that is essentially non-reactive with permalloy at elevated temperatures while the substrate is heated. The permalloy films have a zero or slightly negative magnetostriction, low easy and hard axis coercivities, and a low anisotropy field. At very small film thicknesses the permalloy films formed with substrate heating exhibit an even greater percentage increase in magnetoresistance coefficient than at higher film thicknesses, thereby allowing the films to function in magnetic recording disk drive heads for use at very high linear recording densities. The precise composition of the Ni--Fe alloy forming the sensor layer can be varied slightly, depending on the film thickness, to provide a sensor layer with essentially zero or slightly negative magnetostriction.

摘要翻译： 在磁记录盘驱动器中用作读取传感器的磁阻传感器使用坡莫合金（Ni81，Fe19）的近似组成，其磁阻系数明显大于现有技术的坡莫合金传感器层，用于一定范围的坡莫合金膜厚度。 坡莫合金膜沉积在基底上，例如氧化铝，其在加热基底的同时基本上与坡莫合金在高温下不反应。 坡莫合金膜具有零或略微负的磁致伸缩，低容易和硬轴矫顽力，以及低各向异性场。 在非常小的膜厚度下，用衬底加热形成的坡莫合金膜的磁阻系数比在较高的膜厚度上显示更大的百分比增加，从而允许膜在非常高的线性记录密度下使用的磁记录盘驱动头中起作用。 形成传感器层的Ni-Fe合金的精确组成可以根据膜厚度稍微变化，以提供基本为零或略微负的磁致伸缩的传感器层。

公开(公告)号：US5856897A

公开(公告)日：1999-01-05

申请号：US979815

申请日：1997-11-26

申请人： Daniele Mauri

发明人： Daniele Mauri

IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3932 ,  G11B5/3954 ,  G11B2005/3996

摘要： A dual spin valve (DSV) magnetoresistive (MR) sensor has a free magnetic layer disposed between first and second pinned magnetic layers. The first pinned layer has two magnetic sublayers separated from each other by an antiparallel spacer. The first magnetic sublayer closer to the free layer has a magnetic moment which is smaller than the magnetic moment of the second magnetic sublayer. The net moment of the magnetic sublayers is chosen to be equal to the magnetic moment of the second pinned layer thus creating a flux closure and substantially minimizing the effect of the demagnetizing forces. By creating a flux closure and current induced magnetic fields, the first and second pinned layers' magnetization are fixed. This is in contrast with conventional dual spin valve sensors using two antiferromagnetic layers to pin the magnetization of the pinned layers.

摘要翻译： 双自旋阀（DSV）磁阻（MR）传感器具有设置在第一和第二固定磁性层之间的自由磁性层。 第一被钉扎层具有通过反平行间隔件彼此分离的两个磁性子层。 靠近自由层的第一磁性子层具有小于第二磁性子层的磁矩的磁矩。 选择磁性子层的净矩为等于第二被钉扎层的磁矩，从而产生通量闭合并且基本上最小化去磁力的影响。 通过产生磁通闭合和电流感应磁场，第一和第二固定层的磁化是固定的。 这与使用两个反铁磁层来固定被钉扎层的磁化的常规双自旋阀传感器形成对比。

公开(公告)号：US5206590A

公开(公告)日：1993-04-27

申请号：US625343

申请日：1990-12-11

申请人： Bernard Dieny ,  Bruce A. Gurney ,  Steven E. Lambert ,  Daniele Mauri ,  Stuart S. P. Parkin ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

发明人： Bernard Dieny ,  Bruce A. Gurney ,  Steven E. Lambert ,  Daniele Mauri ,  Stuart S. P. Parkin ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3903 ,  G11B2005/0018 ,  G11B2005/3996

摘要： A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.

公开(公告)号：US07848064B2

公开(公告)日：2010-12-07

申请号：US12172134

申请日：2008-07-11

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

公开(公告)号：US07791845B2

公开(公告)日：2010-09-07

申请号：US11645462

申请日：2006-12-26

申请人： Daniele Mauri ,  Alexander M. Zeltser

发明人： Daniele Mauri ,  Alexander M. Zeltser

IPC分类号： G11B5/39 ,  G11C11/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An improved formulation for free layers in MTJ sensors is disclosed. Optimized results of the prior art suggest free layer iron concentrations less than 20 atomic % give the best performance. The present invention discloses improved TMR ratio, Hce, and λ performance for high free layer iron concentrations between about 70 and 91.5 atomic %, when compared to the prior art.

摘要翻译： 公开了MTJ传感器中自由层的改进配方。 现有技术的优化结果表明，低于20原子％的自由层铁浓度具有最佳性能。 与现有技术相比，本发明公开了对于高约70至91.5原子％的高自由层铁浓度的改进的TMR比，Hce和λ性能。