公开(公告)号：US09882022B2

公开(公告)日：2018-01-30

申请号：US15592150

申请日：2017-05-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ming Kuo ,  Po-Jen Chuang ,  Fu-Jung Chuang ,  Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang ,  Fu-Yu Tsai

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28 ,  H01L29/49 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0228 ,  H01L21/28088 ,  H01L21/31111 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, a gate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

公开(公告)号：US09589846B1

公开(公告)日：2017-03-07

申请号：US15006053

申请日：2016-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Yu Tsai ,  Wei-Hsin Liu ,  Han-Sheng Huang

IPC: H01L21/82 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/823462 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833

Abstract: A method for forming a semiconductor device is provided. First, a dielectric layer is provided on a substrate, wherein a first recess and a second recess are formed in the dielectric layer. After a mask layer is filled into the first recess and the second recess, the mask layer in the second recess is removed away, thereby forming a patterned mask layer. Subsequently, a nitride treatment is performed to remove unwanted residue of the mask layer in the second recess.

Abstract translation: 提供一种形成半导体器件的方法。 首先，在基板上设置电介质层，其中在电介质层中形成有第一凹部和第二凹部。 在将掩模层填充到第一凹部和第二凹部中之后，将第二凹部中的掩模层去除，从而形成图案化掩模层。 随后，进行氮化处理以去除第二凹陷中的掩模层的不需要的残留物。