摘要:
A static random access memory having multiple I/Os includes a memory array (10) of memory cells (42) with columns that are selectively clearable as a function of the associated I/O. The columns are arranged in pairs (34) with each column in the pair (34) associated with the same I/O. A clear signal is input thereto on a line (28) and driven by a driver (30). The clear signal is only associated with the pairs (34) associated with a selected I/O. The remaining columns of memory cells associated with unselected I/Os are not cleared.
摘要:
An integrated circuit, such as a memory, having an internal data bus and circuitry for precharging the same, with each data conductor in the said data bus associated with a dummy data conductor, which is driven to a complementary logic state from that of its associated data conductor. During precharge and equilibration at the beginning of a cycle, initiated by an address transition detection or by a clock signal, each data conductor is connected to its dummy data conductor so that the data conductor is precharged to a midlevel by way of charge sharing. Also during precharge and equilibration, the data driver is placed in a high impedance state by the sense amplifier output nodes both going to the same logic level. This midlevel precharge allows for faster switching, and reduced instantaneous current, than obtained for rail-to-rail switching. Self-biasing circuits are connected to each of the data conductors and dummy data conductors, to prevent floating conditions during long precharge and equilibration periods. The output stage receiving the data conductor is preferably disabled during precharge and equilibration, so that the data conductor can be precharged near the trip level of the output stage, without risking output stage oscillations. A termination is also provided for the dummy data conductor, matching the load presented by the output stage to the data conductor, so that the data conductor and its dummy data conductor are at complementary states even during transient conditions.
摘要:
An input buffer circuit having a latching function controlled by a transition detection circuit is disclosed. The input stage of the input buffer is connected to a delay stage, and to a transition detection circuit. The output of the delay stage is connected to a pass gate, which is controlled by the output of the transition detection circuit; a latch is connected to the other side of the pass gate. The transition detection circuit produces a pulse responsive to a transition, and the pass gate is turned off during the length of the pulse, with the latch maintaining and presenting the state of the input prior to the transition. After the pulse is complete, the new value of the input signal is latched and presented to the circuit. Since the pass gate is turned off during the transition detection pulse, a short and spurious transition at the input terminal is isolated from the latch by the pass gate (with the transition detection pulse lengthened), and does not appear at the output of the input buffer circuit.
摘要:
Two sets of binary data of N bits in length are compared by first forming the exclusive OR function of each of the corresponding bits of the two data sets. The output of each of the exclusive OR gates controls two sets of transmission gates in each of N comparator circuits which are combined in series. If an individual pair of bits are the same, then the comparator circuit transfers the data from its compare input to its compare output, and if the individual bits are different, the respective compare circuit transfers the data from the respective bit on one of the buses to the compare output of the circuit. The compare input of the first compare circuit is connected to ground and the compare input of the rest of the comparator circuits is connected to the compare output of the previous circuit and the compare output of the Nth compare circuit forms a signal indicative of whether the data on the first bus is greater than the data on the second bus.
摘要:
An integrated circuit includes an output pad, an alarm output pad, and a test mode output pad. A first multi-bit register is programmable to store programmable data such as data that identifies a customer for whom the integrated circuit has been manufactured. A second multi-bit register is programmable to store customer specified threshold data. A first circuit selectively couples the first and second multi-bit registers to the output pad. The first circuit is operable responsive to the integrated circuit being placed into a test mode to perform parallel-to-serial conversion of either the customer identification data stored in the first multi-bit register or the customer specified threshold data stored in the second multi-bit register and drive the converted data for output through the output pad. The integrated circuit further includes a tamper detection circuit operable responsive to the customer specified threshold data to generate a tamper alarm signal. A second circuit selectively couples the tamper alarm signal to the alarm output pad and test mode output pad depending on whether the integrated circuit is in a test mode. More specifically, the second circuit operates to drive the alarm output pad with the tamper alarm signal when the integrated circuit is not in test mode and drive the test mode output pad with the tamper alarm signal when the integrated circuit is in test mode (with the alarm output pad driven to a known state).
摘要:
A circuit includes a memory cell having a high voltage supply node and a low voltage supply node. Power multiplexing circuitry is included to selectively apply one of a first set of voltages and a second set of voltages to the high and low voltage supply nodes of the cell in dependence upon a current operational mode of the cell. If the cell is in active read or write mode, then the multiplexing circuitry selectively applies the first set of voltages to the high and low voltage supply nodes. Conversely, if the cell is in standby no-read or no-write mode, then the multiplexing circuitry selectively applies the second set of voltages to the high and low voltage supply nodes. The second set of voltages are offset from the first set of voltages. More particularly, a low voltage in the second set of voltages is higher than a low voltage in the first set of voltages, and wherein a high voltage in the second set of voltages is less than a high voltage in the first set of voltages. The cell can be a member of an array of cells, in which case the selective application of voltages applies to the array depending on the active/standby mode of the array. The array can include a block or section within an overall memory device including many blocks or sections, in which case the selective application of voltages applies to individual blocks/sections depending on the active/standby mode of the block/section itself.
摘要:
A digital-to-analog converter, in response to a digital signal, selectively taps a resistor string to generate an analog output and selectively shunts around resistors in the string to voltage shift the analog output. If two supply voltage sets are present, two strings are provided. A mutually exclusively selection of outputs is made to select a source of the analog output. An integrated circuit temperature sensor uses the converter and includes a sensing circuit that determines exposure to one of a relatively low or high temperature. A measured voltage across the base-emitter of a bipolar transistor is selected in low temperature exposure and compared against a first reference for a too cold temperature condition. Alternatively, a measured delta voltage across the base-emitter is selected in high temperature exposure and compared against a second reference voltage for a too hot temperature condition. Through the comparisons, a temperature exposure detection is made.
摘要:
A test circuit and method are disclosed for testing memory cells of a ferroelectric memory device having an array of ferroelectric memory cells. The test circuitry is coupled to the column lines, for selectively sensing voltage levels appearing on the column lines and providing externally to the ferroelectric memory device an electrical signal representative of the sensed voltage levels. In this way, ferroelectric memory cells exhibiting degraded performance may be identified.
摘要:
An integrated circuit and method for providing a switchover from the primary power source to the secondary power source to prevent a volatile element from losing stored data. The integrated circuit includes a forced power source switchover circuit for detecting that the supply level of the primary power source drops below a predefined threshold level. A switchover circuit on the integrated circuit initiates a switchover operation based upon the forced power source switchover circuit detecting that the supply level being received from the primary power source drops below the predefined threshold level. The detection by the forced power source switchover circuitry may occur on a signal level that transitions faster than a predetermined negative rate of change. The integrated circuit may be incorporated in any system having volatile elements, such as memory or a clock.
摘要:
A memory device having a first and a second memory section, the first and the second memory sections being coupled to bit lines. The second memory section may include at least one fuse. The first memory section includes a volatile memory and the second memory section includes a non-volatile memory. The volatile memory may be static or dynamic random access memory. The memory device may further include a control circuit connected to the at least one fuse to provide for prelaser testing.