公开(公告)号：US08611143B2

公开(公告)日：2013-12-17

申请号：US13403308

申请日：2012-02-23

申请人： Hideyuki Sugiyama ,  Masato Oda ,  Shinobu Fujita ,  Tetsufumi Tanamoto ,  Mizue Ishikawa ,  Takao Marukame ,  Tomoaki Inokuchi ,  Yoshiaki Saito

发明人： Hideyuki Sugiyama ,  Masato Oda ,  Shinobu Fujita ,  Tetsufumi Tanamoto ,  Mizue Ishikawa ,  Takao Marukame ,  Tomoaki Inokuchi ,  Yoshiaki Saito

IPC分类号： G11C11/00

CPC分类号： G11C5/148 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A memory circuit according to an embodiment includes: a first transistor including a first source/drain electrode, a second source/drain electrode, and a first gate electrode; a second transistor including a third source/drain electrode connected to the second source/drain electrode, a fourth source/drain electrode, and a second gate electrode; a third transistor and a fourth transistor forming an inverter circuit, the third transistor including a fifth source/drain electrode, a sixth source/drain electrode, and a third gate electrode connected to the second source/drain electrode, the fourth transistor including a seventh source/drain electrode connected to the sixth source/drain electrode, an eighth source/drain electrode, and a fourth gate electrode connected to the second source/drain electrode; and an output terminal connected to the sixth source/drain electrode. At least one of the third transistor and the fourth transistor is a spin MOSFET, and an output of the inverter circuit is sent from the output terminal.

摘要翻译： 根据实施例的存储器电路包括：第一晶体管，包括第一源极/漏极，第二源极/漏极和第一栅电极; 第二晶体管，包括连接到第二源极/漏极的第三源极/漏极，第四源极/漏极和第二栅极; 第三晶体管和形成逆变器电路的第四晶体管，所述第三晶体管包括第五源极/漏极，第六源极/漏极和连接到所述第二源极/漏极的第三栅电极，所述第四晶体管包括第七 连接到第六源极/漏极的源极/漏极电极，连接到第二源极/漏极的第八源极/漏极电极和第四栅极电极; 以及连接到第六源极/漏极的输出端子。 第三晶体管和第四晶体管中的至少一个是自旋MOSFET，并且从输出端子发送反相器电路的输出。

公开(公告)号：US08576601B2

公开(公告)日：2013-11-05

申请号：US13403398

申请日：2012-02-23

申请人： Takao Marukame ,  Tomoaki Inokuchi ,  Hideyuki Sugiyama ,  Mizue Ishikawa ,  Yoshiaki Saito ,  Atsuhiro Kinoshita ,  Kosuke Tatsumura

发明人： Takao Marukame ,  Tomoaki Inokuchi ,  Hideyuki Sugiyama ,  Mizue Ishikawa ,  Yoshiaki Saito ,  Atsuhiro Kinoshita ,  Kosuke Tatsumura

IPC分类号： G11C15/02

CPC分类号： G11C15/02 ,  G11C11/161 ,  G11C15/046 ,  H01L27/228

摘要： One embodiment provides a content addressable memory, including: a pair of spin MOSFETs including: a first spin MOSFET whose magnetization state is set in accordance with stored data; and a second spin MOSFET whose magnetization state is set in accordance with the stored data, the second spin MOSFET being connected in parallel with the first spin MOSFET; a first wiring configured to apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data; and a second wiring configured to apply a current to both of the first spin MOSFET and the second spin MOSFET.

摘要翻译： 一个实施例提供一种内容可寻址存储器，包括：一对自旋MOSFET，其包括：第一自旋MOSFET，其磁化状态根据存储的数据设置; 以及第二自旋MOSFET，其磁化状态根据存储的数据设定，第二自旋MOSFET与第一自旋MOSFET并联连接; 第一布线，被配置为施加栅极电压，使得第一自旋MOSFET和第二自旋MOSFET中的任何一个根据搜索数据变为导电; 以及配置为向第一自旋MOSFET和第二自旋MOSFET两者施加电流的第二布线。

公开(公告)号：US08548693B2

公开(公告)日：2013-10-01

申请号：US13515324

申请日：2011-03-10

申请人： Masatsugu Numazaki ,  Isamu Satoh ,  Satoshi Kohsuge ,  Kyouhei Sawada ,  Yoshiaki Saito ,  Jun Kawayanagi ,  Minoru Wada

发明人： Masatsugu Numazaki ,  Isamu Satoh ,  Satoshi Kohsuge ,  Kyouhei Sawada ,  Yoshiaki Saito ,  Jun Kawayanagi ,  Minoru Wada

IPC分类号： E02F3/43 ,  E02F9/22

CPC分类号： E02F9/2207 ,  E02F3/431 ,  E02F9/2012 ,  F15B11/048 ,  F15B2211/20546 ,  F15B2211/6309 ,  F15B2211/6336 ,  F15B2211/6346 ,  F15B2211/6656 ,  F15B2211/6657 ,  F15B2211/755 ,  F15B2211/7656 ,  F15B2211/853 ,  F15B2211/8606

摘要： A control device for a work machine on a construction vehicle is provided so that a bucket cylinder is stopped at a target position, with high accuracy achieved in a bucket cylinder length, and with chock held down to a low level. A bucket cylinder length detection section refereces a cylinder length detection table on the basis of a boom angle and a bell crank angle, thereby detecting a bucket cylinder length. A bucket attitude control section controls the bucket cylinder length so that a target position will be reached. Feedback control is performed until a set value which is set short of a target value is reached. After the bucket cylinder length reaches the set value, open loop control is performed until the target value is reached.

摘要翻译： 提供了一种用于施工车辆上的作业机械的控制装置，使得铲斗缸在目标位置停止，在铲斗缸长度上实现高精度，并且将轴承座压低至低水平。 铲斗缸长度检测部基于起重臂角度和钟形曲柄角度来回转缸长度检测台，从而检测铲斗缸长度。 铲斗姿态控制部分控制铲斗缸长度，从而达到目标位置。 执行反馈控制，直到达到设定为不足目标值的设定值。 铲斗缸长度达到设定值后，执行开环控制，直到达到目标值。

公开(公告)号：US20130075843A1

公开(公告)日：2013-03-28

申请号：US13526007

申请日：2012-06-18

申请人： Tomoaki Inokuchi ,  Takao Marukame ,  Tetsufumi Tanamoto ,  Hideyuki Sugiyama ,  Mizue Ishikawa ,  Yoshiaki Saito

发明人： Tomoaki Inokuchi ,  Takao Marukame ,  Tetsufumi Tanamoto ,  Hideyuki Sugiyama ,  Mizue Ishikawa ,  Yoshiaki Saito

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  H01L29/66984

摘要： A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.

摘要翻译： 根据实施例的自旋晶体管包括：形成在衬底上并用作源极和漏极之一的第一磁性层; 绝缘膜，其具有面向第一磁性层的上表面的下表面，与下表面相对的上表面，以及不同于下表面和上表面的侧面，绝缘膜形成在第一磁性层的上表面上 第一磁性层，作为通道; 第二磁性层，形成在绝缘膜的上表面上并用作源极和漏极中的另一个; 沿绝缘膜的侧面形成的栅电极; 以及位于绝缘膜的栅极和侧面之间的栅极绝缘膜。

公开(公告)号：US08385114B2

公开(公告)日：2013-02-26

申请号：US13360904

申请日：2012-01-30

申请人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

发明人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

IPC分类号： G11C11/14

CPC分类号： G11C14/0081

摘要： Certain embodiments provide a nonvolatile memory circuit in which a first p-channel MOS transistor and a first n-channel spin MOS transistor are connected in series, a second p-channel MOS transistor and a second n-channel spin MOS transistor are connected in series, gates of the first p-channel MOS transistor and the first n-channel spin MOS transistor are connected, gates of the second p-channel MOS transistor and the second n-channel spin MOS transistor are connected, a first n-channel transistor includes a drain connected to a drain of the first p-channel transistor and the gate of the second p-channel transistor, a second n-channel transistor includes a drain connected to a drain of the second p-channel transistor and the gate of the first p-channel transistor, and gates of the first and second n-channel transistors are connected.

摘要翻译： 某些实施例提供了其中第一p沟道MOS晶体管和第一n沟道自旋MOS晶体管串联连接的非易失性存储器电路，第二p沟道MOS晶体管和第二n沟道自旋MOS晶体管串联连接 第一p沟道MOS晶体管和第一n沟道自旋MOS晶体管的栅极连接，第二p沟道MOS晶体管和第二n沟道自旋MOS晶体管的栅极连接，第一n沟道晶体管包括 连接到第一p沟道晶体管的漏极和第二p沟道晶体管的栅极的漏极，第二n沟道晶体管包括连接到第二p沟道晶体管的漏极和第一p沟道晶体管的栅极的漏极 p沟道晶体管，第一和第二n沟道晶体管的栅极连接。

公开(公告)号：US08264024B2

公开(公告)日：2012-09-11

申请号：US13166285

申请日：2011-06-22

申请人： Yoshiaki Saito ,  Hideyuki Sugiyama

发明人： Yoshiaki Saito ,  Hideyuki Sugiyama

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  H01L29/66984 ,  Y10S977/932 ,  Y10S977/933 ,  Y10S977/936

摘要： A spin transistor includes a non-magnetic semiconductor substrate having a channel region, a first area, and a second area. The channel region is between the first and the second areas. The spin transistor also includes a first conductive layer located above the first area and made of a ferromagnetic material magnetized in a first direction; and a second conductive layer located above the second area and made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction. The channel region introduces electron spin between the conductive layers. The spin transistor also includes a gate electrode located between the conductive layers and above the channel region; and a tunnel barrier film located between the non-magnetic semiconductor substrate and at least one of the conductive layers.

摘要翻译： 自旋晶体管包括具有沟道区，第一区和第二区的非磁性半导体衬底。 通道区域在第一和第二区域之间。 自旋晶体管还包括位于第一区域上方并由沿第一方向磁化的铁磁材料制成的第一导电层; 以及第二导电层，其位于第二区域上方并由在相对于第一方向反平行的第一方向和第二方向中的一个中被磁化的铁磁材料制成。 沟道区域在导电层之间引入电子自旋。 自旋晶体管还包括位于导电层之间并位于沟道区之上的栅电极; 以及位于非磁性半导体衬底和至少一个导电层之间的隧道阻挡膜。

公开(公告)号：US20120003070A1

公开(公告)日：2012-01-05

申请号：US13257207

申请日：2010-03-15

申请人： Mamoru Tochizawa ,  Koji Takahashi ,  Yoshiaki Saito

发明人： Mamoru Tochizawa ,  Koji Takahashi ,  Yoshiaki Saito

IPC分类号： E02F9/20 ,  G06F19/00 ,  E02F3/36

CPC分类号： E02F9/202 ,  E02F9/2253

摘要： The construction vehicle is provided with an engine, a clutch, a travel device, a work equipment, a drive force setting dial, and a controller that includes: a theoretical value determination unit that determines a theoretical value, for the degree of engagement to make the upper limit value of the drive force equal to a set drive force; an operational state determination unit that determines whether the work equipment is outputting the drive force in a predetermined travel direction; a drive force determination unit that determines whether the drive force is greater than the set drive force; and a degree of engagement reduction unit that, if of operational state determination and of drive force determination are both affirmative, causes the degree of engagement to approach the theoretical value.

摘要翻译： 施工车辆设置有发动机，离合器，行驶装置，作业设备，驱动力设定拨盘和控制器，该控制器包括：理论值确定单元，用于为了使接合程度确定理论值 驱动力的上限值等于设定的驱动力; 操作状态确定单元，其确定所述工作设备是否在预定的行进方向上输出所述驱动力; 驱动力确定单元，其确定驱动力是否大于设定的驱动力; 以及如果操作状态确定和驱动力确定均为肯定的接合减小单元的程度使得接合程度接近理论值。

公开(公告)号：US08004029B2

公开(公告)日：2011-08-23

申请号：US12638375

申请日：2009-12-15

申请人： Yoshiaki Saito ,  Hideyuki Sugiyama

发明人： Yoshiaki Saito ,  Hideyuki Sugiyama

IPC分类号： H01L21/02

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  H01L29/66984 ,  Y10S977/932 ,  Y10S977/933 ,  Y10S977/936

摘要： A spin transistor includes a non-magnetic semiconductor substrate having a channel region, a first area, and a second area. The channel region is between the first and the second areas. The spin transistor also includes a first conductive layer located above the first area and made of a ferromagnetic material magnetized in a first direction; and a second conductive layer located above the second area and made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction. The channel region introduces electron spin between the conductive layers. The spin transistor also includes a gate electrode located between the conductive layers and above the channel region; and a tunnel barrier film located between the non-magnetic semiconductor substrate and at least one of the conductive layers.

摘要翻译： 自旋晶体管包括具有沟道区，第一区和第二区的非磁性半导体衬底。 通道区域在第一和第二区域之间。 自旋晶体管还包括位于第一区域上方并由沿第一方向磁化的铁磁材料制成的第一导电层; 以及第二导电层，其位于第二区域上方并由在相对于第一方向反平行的第一方向和第二方向中的一个中被磁化的铁磁材料制成。 沟道区域在导电层之间引入电子自旋。 自旋晶体管还包括位于导电层之间并位于沟道区之上的栅电极; 以及位于非磁性半导体衬底和至少一个导电层之间的隧道阻挡膜。

公开(公告)号：US07943974B2

公开(公告)日：2011-05-17

申请号：US12662100

申请日：2010-03-31

申请人： Mizue Ishikawa ,  Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

发明人： Mizue Ishikawa ,  Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/08

摘要： A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.

摘要翻译： 自旋MOS场效应晶体管包括源电极和漏电极，每个源极和漏极具有通过层叠杂质扩散层，（001）取向的MgO层和Heusler合金而获得的结构。 杂质扩散层形成在半导体层的表面区域中。 （001）取向的MgO层形成在杂质扩散层上。 Heusler合金形成在MgO层上。

公开(公告)号：US20110040459A1

公开(公告)日：2011-02-17

申请号：US12736159

申请日：2009-03-11

申请人： Takahide Takiguchi ,  Satoshi Matsumoto ,  Yoshiaki Saito

发明人： Takahide Takiguchi ,  Satoshi Matsumoto ,  Yoshiaki Saito

IPC分类号： G06F19/00

CPC分类号： E02F9/2246 ,  E02F9/2235 ,  E02F9/2296

摘要： An object of the present invention is to prevent an unnecessary large amount of hydraulic oil from being supplied to a cylinder when a working vehicle capable of performing both a loading operation and a digging operation is performing the digging operation.When one or a plurality of first digging operation conditions are satisfied and when a second operation condition that it is not detected that the loading operation is being performed is also satisfied, a control unit executes fluid amount reduction control of reducing the amount of hydraulic oil supplied from a first pump to a cylinder that actuates a work equipment.

摘要翻译： 本发明的目的在于，当能够执行装载操作和挖掘操作的作业车辆正在进行挖掘操作时，防止不必要的大量液压油被供给到气缸。 当满足一个或多个第一挖掘操作条件时，并且当满足未检测到正在进行装载操作的第二操作条件时，控制单元执行减少供应的液压油量的流体量减少控制 从第一泵到致动工作设备的气缸。