公开(公告)号：US20040094402A1

公开(公告)日：2004-05-20

申请号：US10632882

申请日：2003-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

IPC: C23C014/35

CPC classification number: C23C14/345 ,  C23C14/35 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/3455

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract translation: 例如，用于溅射诸如钽和氮化钽的沉积材料的DC磁控溅射反应器及其使用的自离子等离子体（SIP）溅射和电容耦合等离子体（CCP）溅射的方法，其一起或交替地被促进 ，在同一个房间。 此外，可以通过电感耦合等离子体（ICP）再溅射来减薄或消除底部覆盖。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 CCP由将电能耦合到等离子体中的RF能量的基座电极提供。 CCP等离子体优选由围绕基座的电磁线圈产生的磁场增强，其作用是限制CCP等离子体并增加其密度。

公开(公告)号：US20040050687A1

公开(公告)日：2004-03-18

申请号：US10658460

申请日：2003-09-10

Applicant: ULVAC, INC.

Inventor： Myounggoo Lee ,  Yoshihiro Okamura ,  Kazuyuki Tomizawa ,  Satoru Toyoda ,  Narishi Gonohe

IPC: C23C014/32

CPC classification number: C23C14/345 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3455

Abstract: The present invention provides a bias sputtering film forming process and film forming apparatus that can form a coating film having a good film thickness distribution in a minute coated surface of a complicated shape, such as contact holes, through-holes and wiring grooves, especially for the sidewall portions thereof. To a bias sputtering film forming apparatus provided with a sputtering cathode 4 and a substrate stage 5 holding a target 6 and a substrate 7 facing to each other, respectively, in a vacuum chamber 1 having a sputtering gas inlet 3 and a vacuum exhaust port 2, a power source 9 of a variable output for the substrate stage 5 and a control system 10 are connected. The substrate bias voltage value when the cathode voltage is made set to a predetermined voltage previously, and the target is parted from the substrate by a predetermined distance; and the thickness distribution of the thin film on each surface corresponding to this substrate bias voltage value are stored in the control system 10 as reference data. The substrate bias voltage value to make the film thickness substantially uniform in the film forming of each surface is selected from the reference data to be a bias voltage function that makes this a variable, and the output of the power source is controlled by this function.

Abstract translation: 本发明提供一种偏置溅射成膜方法和成膜装置，其能够在复杂形状的微小涂布表面形成具有良好膜厚分布的涂膜，例如接触孔，通孔和布线槽，特别是用于 其侧壁部分。 在具有溅射阴极4和基板台5的偏压溅射成膜装置中，分别在具有溅射气体入口3和真空排气口2的真空室1中分别保持靶6和相互面对的基板7 连接基板台5的可变输出用电源9和控制系统10。 将阴极电压预先设定为预定电压并将靶从衬底分离预定距离时的衬底偏置电压值; 并且对应于该衬底偏置电压值的每个表面上的薄膜的厚度分布作为参考数据存储在控制系统10中。 从使基准数据成为偏置电压函数的参考数据中选择使每个表面的膜形成膜厚度基本均匀的衬底偏置电压值，并且通过该功能来控制电源的输出。

公开(公告)号：US06491801B1

公开(公告)日：2002-12-10

申请号：US09924251

申请日：2001-08-07

Applicant: Tza-Jing Gung

Inventor： Tza-Jing Gung

IPC: C23C1435

CPC classification number: H01J37/3455 ,  H01J37/3408

Abstract: An unbalanced magnetron rotatable about the back of a sputtering target and including a nested magnetron part having an outer magnetic pole of a first magnetic polarity surrounding an inner magnetic pole of an opposed second magnetic polarity and an auxiliary magnet increasing the unbalance and adjusting the uniformity of sputtering. In a first embodiment, the auxiliary magnet is vertically magnetized and placed on an opposite side of the rotation axis from the major portion of the nested magnetron part. This embodiment most strongly affects the vertical magnetic field distribution near the wafer and can produce a more uniform magnetic field at the wafer. In a second embodiment, the auxiliary magnet is horizontally magnetized and placed between the inner pole and the portion of the outer pole near the target periphery. This embodiment most strongly affects the sputtering erosion pattern near the target periphery. The two embodiments can be combined.

Abstract translation: 一种不平衡磁控管，其可围绕溅射靶的背面旋转，并且包括嵌套的磁控管部件，该嵌套磁控管部件具有围绕相对的第二磁极极的内部磁极的第一磁极的外部磁极和辅助磁体，从而增加不平衡并且调节 溅射。 在第一实施例中，辅助磁体被垂直磁化并且被放置在与嵌套的磁控管部分的主要部分相反的旋转轴线的一侧。 该实施例最强烈地影响晶片附近的垂直磁场分布，并且可以在晶片处产生更均匀的磁场。 在第二实施例中，辅助磁体被水平地磁化并且放置在靠近目标周边的内极和外极部分之间。 该实施例最有力地影响靶周边附近的溅射侵蚀图案。 可以组合两个实施例。

公开(公告)号：US06261428B1

公开(公告)日：2001-07-17

申请号：US08183787

申请日：1994-01-21

Applicant: Toshihisa Nozawa ,  Keiji Horioka ,  Isahiro Hasegawa

Inventor： Toshihisa Nozawa ,  Keiji Horioka ,  Isahiro Hasegawa

IPC: C23C1434

CPC classification number: H01J37/3408 ,  H01J37/3455

Abstract: A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space between the electrodes, a high-frequency power supply for generating an electric field, to thereby to form plasma from the process gas, and magnetic field generating section for generating a magnetic field which extends through the space between the electrodes. The magnetic field generating section has a pair of permanent magnets located outside the process chamber, sandwiching the space between the electrodes. The magnetic field generated by this section extends through said space, from one of the magnets to the other thereof and substantially parallel to the electrodes, and serves to achieve magnetron plasma process on an object placed on the lower electrode.

Abstract translation: 磁控管等离子体处理装置包括处理室，上电极和下电极，两者都位于处理室内并且彼此平行延伸;气体供应系统，用于将处理气体供应到电极之间的空间中，高 用于产生电场，从而从处理气体形成等离子体的频率电源以及用于产生延伸穿过电极之间的空间的磁场的磁场产生部。 磁场产生部分具有位于处理室外的一对永磁体，夹在电极之间的空间。 由该部分产生的磁场延伸穿过所述空间，从一个磁体到另一个磁体并且基本上平行于电极，并且用于在放置在下电极上的物体上实现磁控管等离子体处理。

公开(公告)号：US5985115A

公开(公告)日：1999-11-16

申请号：US832718

申请日：1997-04-11

Applicant: Larry D. Hartsough ,  David J. Harra ,  Ronald R. Cochran ,  Mingwei Jiang

Inventor： Larry D. Hartsough ,  David J. Harra ,  Ronald R. Cochran ,  Mingwei Jiang

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3497 ,  H01J37/3408 ,  H01J37/3455

Abstract: An internally cooled target assembly for use in a magnetron sputtering apparatus is provided. The internally cooled target assembly includes a cooling plate that is configured to promote highly turbulent coolant flow through the target assembly to achieve efficient and uniform target cooling. The volume of coolant required to cool the target assembly is minimized.

Abstract translation: 提供一种用于磁控溅射装置的内部冷却的目标组件。 内部冷却的目标组件包括冷却板，该冷却板构造成促进高度紊流的冷却剂流过目标组件以实现有效和均匀的目标冷却。 冷却目标组件所需的冷却剂体积最小化。

公开(公告)号：US5980707A

公开(公告)日：1999-11-09

申请号：US217545

申请日：1998-12-18

Applicant: Barry W. Manley

Inventor： Barry W. Manley

IPC: H01J37/34 ,  C23C14/32

CPC classification number: H01J37/3455 ,  H01J37/3408

Abstract: A magnet assembly may comprise a first magnet plate having a first magnet mounted thereon and a second magnet plate having a second magnet mounted thereon and a third magnet mounted thereon adjacent the second magnet so that a pole axis of the second magnet is substantially perpendicular to a pole axis of the third magnet. The second magnet plate is positioned adjacent the first magnet plate so that a plasma-confining magnetic field is created between the first, second, and third magnets. The first and second magnet plates are also moveable with respect to one another so that they can be moved between a center position configuration and an end position configuration. An actuator operatively associated with the first and second magnet plates moves the first and second magnet plates with respect to one another so that the first and second magnet plates are located at about the center position configuration for a time that is greater than a time that the first and second magnet plates are located at about the end position configuration.

Abstract translation: 磁体组件可包括其上安装有第一磁体的第一磁体板和安装在其上的第二磁体的第二磁体板和安装在其上的与第二磁体相邻的第三磁体，使得第二磁体的极轴基本垂直于 第三磁体的极轴。 第二磁体板位于第一磁体板附近，使得在第一磁体和第三磁体之间产生等离子体约束磁场。 第一和第二磁体板也可以相对于彼此移动，使得它们可以在中心位置构型和端部位置构型之间移动。 可操作地与第一和第二磁体板相关联的致动器相对于第一和第二磁体板移动第一和第二磁体板，使得第一和第二磁体板位于大约中心位置配置一段时间， 第一和第二磁体板位于端部位置的构型。

公开(公告)号：US5882488A

公开(公告)日：1999-03-16

申请号：US31958

申请日：1998-02-26

Applicant: Shane P. Leiphart

Inventor： Shane P. Leiphart

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/58 ,  H01L21/285 ,  H01L21/768 ,  C23C14/00

CPC classification number: C23C14/345 ,  C23C14/046 ,  C23C14/58 ,  C23C14/5806 ,  H01J37/3447 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76804 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76877 ,  H01J2237/3327 ,  Y10S438/978 ,  Y10T428/24331

Abstract: An improved apparatus and method for manufacturing semiconductor devices, and, in particular, for depositing material at the bottom of a contact hole, comprises sputtering a material onto a semiconductor substrate; applying a first bias voltage to the substrate, simultaneously removing the material surrounding the contact hole to form a facet at the top of the recess; and applying a second bias voltage to the substrate, simultaneously sputter-depositing the first material onto the bottom of the recess. A further embodiment of the invention utilizes an electrically isolated collimator for the sputtering apparatus. Another embodiment of the invention resputters a first material onto sidewalls of a contact hole during physical vapor deposition.

Abstract translation: 一种用于制造半导体器件的改进的装置和方法，特别是用于在接触孔的底部沉积材料，包括将材料溅射到半导体衬底上; 向基板施加第一偏置电压，同时去除接触孔周围的材料，以在凹部的顶部形成小面; 以及向所述衬底施加第二偏置电压，同时将所述第一材料溅射沉积到所述凹部的底部上。 本发明的另一实施例利用用于溅射装置的电隔离准直器。 本发明的另一个实施例在物理气相沉积期间将第一材料重新喷射到接触孔的侧壁上。

公开(公告)号：US5873989A

公开(公告)日：1999-02-23

申请号：US795754

申请日：1997-02-06

Applicant: John L. Hughes ,  Gary A. Davis ,  Robert J. Kolenkow ,  Carl T. Petersen ,  Norman H. Pond ,  Robert E. Weiss

Inventor： John L. Hughes ,  Gary A. Davis ,  Robert J. Kolenkow ,  Carl T. Petersen ,  Norman H. Pond ,  Robert E. Weiss

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3408

Abstract: A magnetron sputtering source for depositing a material onto a substrate includes a target from which the material is sputtered, a magnet assembly disposed in proximity to the target for confining a plasma at the surface of the target and a drive assembly for scanning the magnet assembly relative to the target. The sputtering source may further include an anode for maintaining substantially constant plasma characteristics as the magnet assembly is scanned relative to the target. The anode may be implemented as variable voltage stationary electrodes positioned at or near the opposite ends of the scan path followed by the magnet assembly, spaced-apart anode wires positioned between the target and the substrate or a movable anode that is scanned with the magnet assembly. The magnet elements of the magnet assembly may have different spacings from the surface of the target to enhance depositional thickness uniformity. The target may be fabricated in sections, each having a target element bonded to a backing element for reduced sensitivity to thermal variations. The target may be rotated from a first fixed position to a second fixed position relative to the magnet assembly at least once during its operating life for increased target utilization.

Abstract translation: 用于将材料沉积到衬底上的磁控溅射源包括溅射材料的靶，设置在靶附近的磁体组件，用于限制目标表面处的等离子体和用于扫描磁体组件的驱动组件 到目标。 当磁体组件相对于靶被扫描时，溅射源还可以包括用于维持基本恒定的等离子体特性的阳极。 阳极可以被实现为位于扫描路径的相对端处或附近的可变电压固定电极，随后是磁体组件，位于靶和衬底之间的间隔开的阳极线或者用磁体组件扫描的可移动阳极 。 磁体组件的磁体元件可以具有与目标表面不同的间隔，以增强沉积厚度均匀性。 靶可以制造成具有目标元件结合到背衬元件的部分，以降低对热变化的敏感性。 目标可以在其运行寿命期间相对于磁体组件从第一固定位置旋转至第二固定位置，以增加目标利用率。

公开(公告)号：US5855744A

公开(公告)日：1999-01-05

申请号：US684446

申请日：1996-07-19

Applicant: Harlan I. Halsey ,  Richard E. Demaray ,  Russell Black ,  Akihiro Hosokawa ,  Allan De Salvo ,  Victoria L. Hall

Inventor： Harlan I. Halsey ,  Richard E. Demaray ,  Russell Black ,  Akihiro Hosokawa ,  Allan De Salvo ,  Victoria L. Hall

IPC: C23C14/35 ,  H01J37/34 ,  H01L21/203

CPC classification number: H01J37/3455 ,  H01J37/3408

Abstract: The structure and method which improves the film thickness uniformity or thickness control when using magnetron sputtering by adjusting the distance between the magnetron or a portion of the magnetron and the sputtering target to provide an improvement in the film thickness uniformity. Shimmed rails, contoured rails, contoured surfaces, cam plates, and cam plate control followers are utilized to achieve an improvement in film thickness uniformity or thickness control due to anomalies in magnetic field as a magnetron assembly moves back and forth when sputtering substrates (utilized primarily for rectangularly shaped substrates).

Abstract translation: 通过调整磁控管或磁控管的一部分与溅射靶之间的距离来改善使用磁控管溅射时的膜厚均匀性或厚度控制的结构和方法，以提高膜厚均匀性。 由于磁控管组件在溅射基板（来自主要应用时）来回移动，因此利用薄板轨道，轮廓轨道，轮廓表面，凸轮板和凸轮板控制跟随器来实现由于磁场异常而导致的膜厚度均匀性或厚度控制的改进 对于矩形基板）。

公开(公告)号：US5833815A

公开(公告)日：1998-11-10

申请号：US842356

申请日：1997-04-24

Applicant: Kyung Shik Kim ,  Tamio Yamada ,  Daisuke Aonuma ,  Yoshifumi Unehara

Inventor： Kyung Shik Kim ,  Tamio Yamada ,  Daisuke Aonuma ,  Yoshifumi Unehara

IPC: C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3455 ,  C23C14/35 ,  C23C14/56 ,  H01J37/3408

Abstract: A sputtering apparatus is equipped with a vacuum enclosure 11, a pumping mechanism 18 that evacuates the interior of the vacuum enclosure, magnetron cathodes 12a and 12b to which are attached targets 14, a gas feed mechanism 19 that feeds sputtering gas, and a substrate transfer mechanism. An electrical discharge is generated in the vicinity of the targets, thereby sputtering the targets, and sputter deposition is performed on substrates 15 that pass by facing onto the target surfaces. The magnetron cathodes are equipped with magnetron magnetic circuits 32, which are able to move, and the magnetron magnetic circuits are equipped with magnetron reciprocating mechanisms 33 including a left-right reciprocating part that reciprocates in the substrate transfer direction, which is parallel to the target surface, and an up-down reciprocating part that reciprocates in a direction perpendicular to the substrate transfer direction.

Abstract translation: 溅射装置配备有真空外壳11，排空真空外壳内部的泵送机构18，附着目标物14的磁控阴极12a和12b，供给溅射气体的气体供给机构19和基板传送 机制。 在靶附近产生放电，由此溅射靶，并且在面向目标表面的基板15上进行溅射沉积。 磁控管阴极配备有能够移动的磁控管磁路32，并且磁控管磁路配备有磁控管往复运动机构33，磁控管往复运动机构33包括在基板传送方向上往复运动的左右往复运动部件，该往复运动部件平行于目标 以及沿垂直于基板输送方向往复运动的上下往复运动部件。