IMAGE SENSORS WITH QUANTUM EFFICIENCY ENHANCED BY INVERTED PYRAMIDS

    公开(公告)号:US20210242265A1

    公开(公告)日:2021-08-05

    申请号:US16777193

    申请日:2020-01-30

    IPC分类号: H01L27/146

    摘要: An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses. The semiconductor substrate includes an array of pixels. Each of the pixels is configured to convert light incident on the pixel to an electrical output signal, the semiconductor substrate having a top surface for receiving the light. The top surface forms a plurality of inverted pyramids in each pixel. The plurality of microlenses are disposed above the top surface and aligned to the plurality of inverted pyramids, respectively.

    Multiple camera calibration chart
    83.
    发明授权

    公开(公告)号:US11082566B2

    公开(公告)日:2021-08-03

    申请号:US15627813

    申请日:2017-06-20

    IPC分类号: H04N1/00 G06T7/80

    摘要: A chart for calibrating a system of multiple cameras, the chart comprising: a background; an array of dots contrasting the background, wherein the array of dots are arranged in rows and columns, wherein the array of dots comprise a first dot array, and a second dot array, wherein the first dot array fully occupies a first region of evenly spaced dots with a first dot density, the second dot array fully occupies a second region of evenly spaced dots with a second dot density, and wherein the second region is enclosed within the first region; a group of first markers in the first region, a group of second markers in the second region, and a third marker at the center of the chart, wherein each second marker is closer to the third marker than each first marker.

    Anti-reflective coating with high refractive index material at air interface

    公开(公告)号:US11075239B2

    公开(公告)日:2021-07-27

    申请号:US16816683

    申请日:2020-03-12

    IPC分类号: H01L27/146

    摘要: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride.

    Charge collection gate with central collection photodiode in time of flight pixel

    公开(公告)号:US11044429B2

    公开(公告)日:2021-06-22

    申请号:US16522496

    申请日:2019-07-25

    发明人: Woon Il Choi

    摘要: A pixel circuit includes a photodiode disposed in a semiconductor material layer to accumulate image charge in response to light incident upon the photodiode. A charge collection gate is coupled to the photodiode. The charge collection gate is disposed over the photodiode to generate an inversion layer in the semiconductor material layer under the charge collection gate to collect the image charge from the photodiode. A first transfer gate is disposed proximate to the charge collection gate, wherein the first transfer gate is coupled to transfer the image charge from in the inversion layer in response to a first transfer signal.

    PIXEL, ASSOCIATED IMAGE SENSOR, AND METHOD

    公开(公告)号:US20210183937A1

    公开(公告)日:2021-06-17

    申请号:US16711239

    申请日:2019-12-11

    发明人: Hui ZANG Gang CHEN

    IPC分类号: H01L27/146

    摘要: A pixel includes a semiconductor substrate, an upper surface thereof forming a trench having a trench depth relative to a planar region of the upper surface surrounding the trench, and in a plane perpendicular to the planar region; an upper width between the planar region and an upper depth that is less than the trench depth; and a lower width, between the upper depth and the trench depth, that is less than the upper width. A floating diffusion region adjacent to the trench extends away from the planar region to a junction depth exceeding the upper depth and is less than the trench depth. The photodiode region in the substrate includes a lower photodiode section beneath the trench and an upper photodiode section adjacent to the trench, beginning at a photodiode depth that is less than the trench depth, extending toward and adjoining the lower photodiode section.

    IMAGE SENSOR FAR END DRIVER CIRCUITRY PROVIDING FAST SETTLING ROW CONTROL SIGNALS

    公开(公告)号:US20210152756A1

    公开(公告)日:2021-05-20

    申请号:US16685663

    申请日:2019-11-15

    IPC分类号: H04N5/341 H04N5/351 H04N5/378

    摘要: An image sensor includes a pixel array with rows and columns of pixels. Each row of the pixel array has a first end that is opposite a second end of each row of the pixel array. Control circuitry is coupled to the first end of each row of the pixel array to provide control signals to each row of the pixel array from the first end of each row of the pixel array. Far end driver circuitry coupled to the second end of each row of the pixel array to selectively further drive from the second end of each row of the pixel array the control signals provided by the control circuitry from the first end of each row of the pixel array. The control circuitry is further coupled to provide far end control signals to the far end driver circuitry.

    Image-sensor package and associated method

    公开(公告)号:US10998361B2

    公开(公告)日:2021-05-04

    申请号:US16139019

    申请日:2018-09-22

    IPC分类号: H01L27/146 H01L23/15

    摘要: An image-sensor package includes a cover glass, an image sensor, and an integrated circuit. The cover glass has a cover-glass bottom surface, to which the image sensor is bonded. The integrated circuit is beneath the cover-glass bottom surface, adjacent to the image sensor, and electronically connected to the image sensor. A method for packaging an image sensor includes attaching an image sensor to a cover-glass bottom surface of a cover glass, a light-sensing region of the image sensor facing the cover-glass bottom surface. The method also includes attaching an integrated circuit to the cover-glass bottom surface, a top IC-surface of the integrated circuit facing the cover-glass bottom surface.

    Light control for improved near infrared sensitivity and channel separation

    公开(公告)号:US10964744B1

    公开(公告)日:2021-03-30

    申请号:US16570920

    申请日:2019-09-13

    IPC分类号: G01J5/20 H01L27/14 H01L27/146

    摘要: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.

    IMAGE SENSOR WITH MICRO-STRUCTURED COLOR FILTER

    公开(公告)号:US20210091130A1

    公开(公告)日:2021-03-25

    申请号:US16576603

    申请日:2019-09-19

    IPC分类号: H01L27/146

    摘要: An image sensor includes a two-dimensional photodiode-array formed in a semiconductor substrate, a first waveguide, and a first color filter. The first waveguide is aligned to a first photodiode of the photodiode-array, located above a top substrate surface of the semiconductor substrate. A first core of the first waveguide has a first core width that is less than a pitch of the photodiode-array in a first direction and a second direction corresponding to respective orthogonal dimensions of the photodiode-array. The first color filter is on a top waveguide surface of the first waveguide and has a first non-uniform thickness above the first core. The first waveguide is between the top substrate surface and the first color filter.