Abstract:
A user interface of an interactive program guide includes a two-dimensional EPG area and a selected program area. The two-dimensional EPG area includes a list of channels, programs corresponding to the channels and an indicator pointing to a selected program. The selected program area includes an analog clock indicating the current time and display period of the selected program and a status area with text indicating the status of the selected program.
Abstract:
The method for accessing an EPG server includes the steps of: sending a web request from a browser-embedded DTV viewing terminal to the EPG server through the Internet; identifying the web requester in the EPG server; providing collected EPG in a webpage mode in the EPG server; and providing DTV presenting parameters from the EPG server to the browser-embedded DTV viewing terminal as soon as a desired program is selected.
Abstract:
The current invention provides a method of determining the lifetime of a semiconductor device due to time dependent dielectric breakdown (TDDB). This method includes providing a plurality of samples of dielectric layer disposed as a gate dielectric layer of a MOS transistor, approximating a source/drain current density distribution as a first function of voltage applied on the samples, approximating a substrate current density distribution as a second function of voltage applied on the samples, approximating a dielectric layer lifetime distribution as a third function of source/drain current density and substrate current density in the samples, deriving, from the first, second, and the third functions, an empirical model wherein a dielectric layer lifetime is a function of voltage applied thereon, and using the model to determine dielectric layer lifetime at a pre-determined operating gate voltage.
Abstract:
The present invention relates to an image display method and system thereof. When displaying an image, a picture is captured. A calculated number of human eyes is determined from the picture to quantify the attraction of the image for the crowd. And then, a reasonable charged fee is calculated.
Abstract:
A semiconductor device having a random grained polysilicon layer and a method for its manufacture are provided. In one example, the device includes a semiconductor substrate and an insulator layer on the substrate. A first polysilicon layer having a random grained structure is positioned above the insulator layer, a semiconductor alloy layer is positioned above the first polysilicon layer, and a second polysilicon layer is positioned above the semiconductor alloy layer.
Abstract:
A method for driving a display device includes the following steps: providing a first displaying data to a first region of a display panel, wherein the first displaying data is a first color displaying data; providing a backlight source of the first color at the first region; and displaying a black color at a specific region neighboring to the first region. Accordingly two different colors will not neighbor with each other based on the above-mentioned method and thus the color deviation problem caused by different color backlight sources is solved by this invention.
Abstract:
A monitoring system for a landing gear system comprising a plurality of sensors for monitoring respective parameters of the aircraft landing system, and a monitor which receives the outputs of the sensors.
Abstract:
A gas supply device, including: a first source of an inert carrier gas, communicated with a first pipeline; a second source of anhydrous reactive gas, communicated with a second pipeline; a third source of enabling chemical gas of an enabling chemical compound, communicated with a third pipeline; a main pipeline, communicated with the first, second, and third pipelines; and a temperature controller, located on the second pipeline.
Abstract:
A method includes measuring a gate leakage current of at least one transistor. A single stress bias voltage is applied to the at least one transistor at a given temperature for a stress period t. The stress bias voltage causes a 10% degradation in a drive current of the transistor at the given temperature within the stress period t. A negative bias temperature instability (NBTI) lifetime τ of the transistor is estimated based on the measured gate leakage current and a relationship between drive current degradation and time observed during the applying step.
Abstract:
The invention discloses an equipment including a main body and N multi-threaded shafts. The main body has a bottom, and N multi-threaded holes are formed on the bottom of the main body, wherein N is a natural number. Each of the N multi-threaded shafts is screwed into one of the N multi-threaded holes via a head end thereof. Each of the N multi-threaded shafts has a manual part at a tail end thereof, wherein the manual part of each of the N multi-threaded shafts is capable of being operated to rotate the shaft relative to the bottom of the main body, so as to adjust a height of the equipment.