公开(公告)号：US08018689B2

公开(公告)日：2011-09-13

申请号：US11768466

申请日：2007-06-26

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: G11B33/14 ,  G11B5/55 ,  G11B21/08

CPC classification number: G11B5/4813 ,  G11B25/043 ,  G11B33/1406

Abstract: A hard disk drive includes a voice coil motor yoke, a base to support the voice coil motor yoke, and formed of a material different from that of the voice coil motor yoke, and a thermal deformation prevention unit which is formed of a material that is substantially the same as that of the voice coil motor yoke, provided between the voice coil motor yoke and the base, and thereby preventing mechanical deformation due to different thermal expansion coefficients between the voice coil motor yoke and the base.

Abstract translation: 硬盘驱动器包括音圈马达轭，用于支撑音圈马达轭的基座，并且由与音圈马达轭不同的材料形成的热变形防止单元，该热变形防止单元由材料形成 基本上与设置在音圈马达轭和底座之间的音圈马达轭的基本相同，从而防止由于音圈马达轭和基座之间的热膨胀系数的不同引起的机械变形。

公开(公告)号：US07727690B2

公开(公告)日：2010-06-01

申请号：US11941599

申请日：2007-11-16

Applicant: Jae-Suk Lee ,  Nam-Goo Kang ,  Hyo-Jin Jeon

Inventor： Jae-Suk Lee ,  Nam-Goo Kang ,  Hyo-Jin Jeon

IPC: C07D401/10 ,  C07D401/12 ,  C07D209/82

CPC classification number: C07D209/82 ,  C08G65/4006

Abstract: Disclosed are a monomer of iridium complex having a fluoro group as a functional group, a monomer of carbazole derivative having a hydroxy group as the functional group, and a copolymer containing the monomers in its main chain. The iridium complex used as a phosphorescent material and the carbazole derivative having an excellent hole transporting capability are synthesized as the monomer to form the copolymer. The content of iridium complex is easily controlled, and the carbazole derivative and iridium complex are contained in the main chain during the copolymer formation, thereby capable of manufacturing a light emitting device with higher heat resistance and chemical stability.

Abstract translation: 公开了具有氟基作为官能团的铱配合物的单体，具有羟基作为官能团的咔唑衍生物的单体和在其主链中含有单体的共聚物。 合成用作磷光材料的铱络合物和具有优异的空穴传输能力的咔唑衍生物作为单体合成以形成共聚物。 铱络合物的含量容易控制，共聚物形成时主链含有咔唑衍生物和铱络合物，能够制造耐热性和化学稳定性高的发光元件。

公开(公告)号：US07687394B2

公开(公告)日：2010-03-30

申请号：US11604920

申请日：2006-11-27

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/4763

CPC classification number: H01L21/7682 ,  H01L21/76807

Abstract: A method for forming a dielectric layer having a low dielectric constant and a method for forming copper wiring using the same are provided. In the method for forming a dielectric, an etch stop layer and a first dielectric are sequentially formed on a semiconductor substrate. Next, the first dielectric is selectively etched to form a pattern, and a second dielectric is formed thereon. Here, the second dielectric may be formed using a plasma enhanced chemical deposition method to have pores or voids therein. Then, the dielectric is planarized and a damascene copper wiring is formed. Since the dielectric includes pores or voids, it may have a very low dielectric constant, which results in an improvement in RC delay.

Abstract translation: 提供一种形成具有低介电常数的电介质层的方法和使用其形成铜布线的方法。 在形成电介质的方法中，在半导体衬底上依次形成蚀刻停止层和第一电介质。 接下来，选择性地蚀刻第一电介质以形成图案，并且在其上形成第二电介质。 这里，可以使用等离子体增强化学沉积方法形成第二电介质以在其中具有孔或空隙。 然后，将电介质平坦化并形成镶嵌铜布线。 由于电介质包括孔或空隙，它可能具有非常低的介电常数，这导致RC延迟的改善。

公开(公告)号：US20090259017A1

公开(公告)日：2009-10-15

申请号：US12435112

申请日：2009-05-04

Applicant: Jae-Suk LEE ,  Kwan-Soo LEE

Inventor： Jae-Suk LEE ,  Kwan-Soo LEE

IPC: C08G75/04

CPC classification number: C08G65/4025

Abstract: The present invention relates to terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s prepared by using the monomers, more particularly, terphenyl dihydroxy monomers containing both two hydroxy functional groups and fluorine and fluorinated poly(arylene ether sulfide)s prepared by an aromatic nucleophilic substitution polymerization (SNAr) using the monomers, which are thus useful as optical materials in the field of information telecommunications.

Abstract translation: 本发明涉及通过使用单体制备的含氟和氟化聚（亚芳基醚硫醚）的三联苯基二羟基单体，更具体地说，涉及含有两个羟基官能团的三联苯基二羟基单体和氟和氟化聚（亚芳基醚硫醚），其由 使用单体的芳族亲核取代聚合（SNAr），因此可用作信息通信领域的光学材料。

公开(公告)号：US07569495B2

公开(公告)日：2009-08-04

申请号：US11158465

申请日：2005-06-22

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02164 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/2256 ,  H01L21/3144 ,  H01L21/31608 ,  H01L21/3185 ,  H01L27/14609 ,  H01L27/14689 ,  H01L29/6656 ,  H01L29/7833

Abstract: Semiconductor devices and methods of manufacturing the same are disclosed. In a disclosed method, a dangling bond in the active region(s) is removed by providing an enough H2 in the PMD liner layer and the interlayer insulating layer directly contacting the active regions, and then gradually diffusing the H2 in a subsequent heat treatment. The method includes forming a gate electrode having a side wall spacer, forming source and drain regions, forming a PMD liner layer by sequentially forming a SiO2:H layer, a SiON:H layer and a SiN:H layer above the gate electrode and the source and drain regions, forming an interlayer insulating layer above the PMD liner layer, and diffusing hydrogen in the PMD liner layer and the interlayer insulating layer to the source and drain region by N2 annealing or Ar annealing.

Abstract translation: 公开了半导体器件及其制造方法。 在所公开的方法中，通过在PMD衬垫层和层间绝缘层中提供足够的H2直接接触活性区域，然后在随后的热处理中逐渐扩散H 2来去除活性区域中的悬挂键。 该方法包括形成具有侧壁间隔物的栅电极，形成源区和漏区，通过在栅电极上顺序形成SiO 2 :H层，SiON：H层和SiN：H层形成PMD衬层， 源极和漏极区域，在PMD衬垫层之上形成层间绝缘层，并通过N2退火或Ar退火将PMD衬层层和层间绝缘层中的氢扩散到源极和漏极区域。

公开(公告)号：US07501706B2

公开(公告)日：2009-03-10

申请号：US11205376

申请日：2005-08-17

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L23/48

CPC classification number: H01L23/3192 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices to reduce stress on a metal interconnect are disclosed. A disclosed semiconductor device comprises: a semiconductor substrate; an uppermost metal interconnect formed on the semiconductor substrate; an oxide layer formed on the substrate and the uppermost metal interconnect; an aluminum layer formed on the oxide layer; and a stress-relief layer formed on the aluminum layer to thereby prevent cracking of the passivation layer during a subsequent packaging process, to increase reliability of the passivation layer, and to prevent degradation of properties of the semiconductor device.

Abstract translation: 公开了减少金属互连上的应力的半导体器件。 所公开的半导体器件包括：半导体衬底; 形成在半导体衬底上的最上面的金属互连; 形成在基板上的氧化物层和最上面的金属互连; 形成在所述氧化物层上的铝层; 以及形成在铝层上的应力消除层，从而防止在随后的封装过程中钝化层的破裂，以增加钝化层的可靠性，并防止半导体器件的性能劣化。

公开(公告)号：US07368514B2

公开(公告)日：2008-05-06

申请号：US10881557

申请日：2004-06-30

Applicant: Jae-Suk Lee ,  Kwan-Soo Lee ,  Ho-Suk Song ,  Jae-Pil Kim

Inventor： Jae-Suk Lee ,  Kwan-Soo Lee ,  Ho-Suk Song ,  Jae-Pil Kim

IPC: C07F7/18

CPC classification number: C08G77/24 ,  C07F7/1804

Abstract: The present invention relates to a siloxane monomer containing a trifluorovinylether group and a sol-gel hybrid polymer prepared using the monomer, more particularly to siloxane monomer with novel structure prepared by reacting alkoxychlorosilane with a Grignard reagent containing a trifluorovinylether (—OC2F3) group, a method of preparing the same and a sol-gel hybrid polymer containing a perfluorocyclobutane (PFCB) group prepared from sol-gel reaction using said siloxane monomer containing a trifluorovinylether group.

Abstract translation: 本发明涉及含有三氟乙烯醚基团的硅氧烷单体和使用该单体制备的溶胶 - 凝胶杂化聚合物，更具体地说，涉及通过使烷氧基氯硅烷与含有三氟乙烯醚（-OC 2）的格利雅试剂 3，根据权利要求1所述的方法，其制备方法和含有由溶胶 - 凝胶反应制备的全氟环丁烷（PFCB）基团的溶胶 - 凝胶杂化聚合物，所述硅氧烷单体含有三氟乙烯基醚基团 。

公开(公告)号：US20070111524A1

公开(公告)日：2007-05-17

申请号：US11559724

申请日：2006-11-14

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/44 ,  H01L23/48

CPC classification number: H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76865

Abstract: Embodiments of a semiconductor device and a method of fabricating the same may include an insulating layer formed on a substrate and having a predetermined hole, a metal interconnection formed in the hole and protruding relative to the insulating layer, a first barrier extending in a lateral direction of the metal interconnection, a second barrier formed on the metal interconnection, and a metal pad formed on the second barrier.

Abstract translation: 半导体器件及其制造方法的实施例可以包括形成在基板上并具有预定孔的绝缘层，形成在孔中并相对于绝缘层突出的金属互连，沿横向延伸的第一屏障 的金属互连，形成在金属互连上的第二阻挡层和形成在第二阻挡层上的金属焊盘。

公开(公告)号：US07186639B2

公开(公告)日：2007-03-06

申请号：US11009723

申请日：2004-12-10

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/4763

CPC classification number: H01L21/76852 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

Abstract: Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.

Abstract translation: 公开了半导体器件的金属互连线及其形成方法。 通过防止金属层侵蚀并防止金属线由于电迁移（EM）和应力迁移（SM）而被破坏，在半导体器件的公开的金属线中实现了提高的可靠性。 所示的金属互连线包括：半导体衬底; 衬底上的金属图案; 金属图案下的胶图案; 金属图案上的抗反射图案; 以及围绕金属图案的侧壁的虚拟图案。

公开(公告)号：US07087520B2

公开(公告)日：2006-08-08

申请号：US10902903

申请日：2004-07-30

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/44

CPC classification number: H01L23/53223 ,  H01L21/76838 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate and metal wiring formed by alternately depositing aluminum layers and copper layers on the semiconductor substrate so that a top layer of the metal wiring is an aluminum layer. The metal wiring is fabricated by alternately depositing an aluminum layer and a copper layer on a semiconductor substrate a predetermined number of times to form a metal wiring layer having an aluminum top layer. A photoresist film pattern is formed on the metal wiring layer and metal wiring is formed by performing an etching process on the metal wiring layer using the photoresist film pattern as a mask.

Abstract translation: 半导体器件包括半导体衬底和通过在半导体衬底上交替沉积铝层和铜层而形成的金属布线，使得金属布线的顶层是铝层。 通过在半导体基板上交替沉积铝层和铜层预定次数来制造金属布线，以形成具有铝顶层的金属布线层。 在金属布线层上形成光致抗蚀剂图案，并且通过使用光致抗蚀剂膜图案作为掩模对金属布线层进行蚀刻处理来形成金属布线。