公开(公告)号：US20050194653A1

公开(公告)日：2005-09-08

申请号：US10796763

申请日：2004-03-08

申请人： Jaroslav Hynecek ,  Richard Merrill ,  Russel Martin

发明人： Jaroslav Hynecek ,  Richard Merrill ,  Russel Martin

IPC分类号： H01L29/768

CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14636 ,  H04N9/045

摘要： The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.

摘要翻译： 本发明详细描述了在没有放置在其表面上的吸收滤光器的情况下感测入射光的颜色的CMOS图像传感器像素的结构。 彩色感测是通过将三电荷检测节点的垂直堆叠放置在硅体中来完成的，该堆叠根据其生成的深度收集电子。 通过使用完全耗尽的势阱形成掩埋层而不是未剥离的结电极，实现小电荷检测节点电容以及因此具有低噪声的高灵敏度。 提出了接触埋层而基本上不增加节点电容的两个实施例。

公开(公告)号：US06882022B2

公开(公告)日：2005-04-19

申请号：US10654451

申请日：2003-09-04

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/06

CPC分类号： H01L27/14609 ,  H01L27/14601

摘要： A Dual Gate BCMD pixel has a compact size, nondestructive readout; complete reset with no kTC-reset noise generation, anti-blooming protection, and column reset capability. By incorporating a dual gate MOS transistor with an enclosed annular layout into the pixels of image sensing array, and sensing photo-generated charge nondestructively by detecting the transistor threshold voltage variations caused by collected charge, achieves this goal and other objects of the invention.

摘要翻译： 双门BCMD像素具有紧凑的尺寸，非破坏性读出; 完全复位，无kTC复位噪声产生，防起霜保护和列复位功能。 通过将具有封闭环形布局的双栅极MOS晶体管结合到图像感测阵列的像素中，并且通过检测由收集的电荷引起的晶体管阈值电压变化来非破坏性地感测光生电荷，实现了本发明的该目的和其它目的。

公开(公告)号：US06784412B2

公开(公告)日：2004-08-31

申请号：US10217181

申请日：2002-08-12

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L2700

CPC分类号： H01L27/14831

摘要： The image sensing device incorporates a charge multiplication function in its serial register. The design layout is compact in size and the charge multiplication register consists of multi-channel sections that are evenly positioned around the periphery of the image sensing area. The individual charge multiplying register sections are coupled together by only 90-degree multi-channel turns located at the image area array corners. The device allows for the optical image sensing area center to be located near the chip center and consequently near the mechanical package center with the minimum silicon chip area sacrifice.

摘要翻译： 图像感测装置在其串行寄存器中包含电荷倍增功能。 设计布局尺寸紧凑，充电倍增寄存器由均匀定位在图像感测区域外围的多通道部分组成。 各个电荷乘法寄存器部分通过位于图像区域阵列拐角处的仅90度的多通道匝耦合在一起。 该器件允许光学图像感测区域中心位于芯片中心附近，并因此靠近机械封装中心，牺牲最小的硅芯片面积。

公开(公告)号：US06608337B2

公开(公告)日：2003-08-19

申请号：US09833194

申请日：2001-04-12

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L31113

CPC分类号： H01L27/14609 ,  H01L27/14649 ,  H01L27/14806

摘要： Image sensors with an enhanced QE and MTF in the NIR spectral region are fabricated on the standard substrates. This is achieved by replacing the p+ type doped layer, typically present under the thick field oxide in the inactive regions of the sensor, with an n+ type doped layer. The n+ type layer, which is biased at the Vdd potential, surrounds the entire image sensor array as a guard ring and is separated from the CCD or CMOS array pixels by a suitable potential barrier. The potential barrier prevents collected charge from escaping into the n+ layer regions. Additional embodiments include output diode and MOS transistor designs that use field plates for creating potential barriers that separate these devices from the n+ type doped field regions.

公开(公告)号：US06518607B2

公开(公告)日：2003-02-11

申请号：US09874033

申请日：2001-06-06

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27148

CPC分类号： H01L27/14806 ,  H04N5/37213

摘要： A new High Dynamic Range charge detection concept useful for CCD and Active Pixel CMOS image sensors uses at least one transistor operating in a punch through mode for the charge detection node reset. The punch through operation significantly reduces the reset feed through which leads to a higher voltage swing available on the node for the signal. This in turn allows building smaller and thus more sensitive charge detection nodes. The undesirabe artifacts, associated with the incomplete reset that are induced by the punch through operation, are completely removed by incorporating the CDS signal processing method into the signal processing chain. The incomplete reset artifact removal by the CDS technique is extended to all other resetting concepts that are modeled by a large reset time constant. The punch through concept is suitable for resetting Floating Diffusion charge detection nodes as well as Floating Gate charge detection nodes.

摘要翻译： 用于CCD和有源像素CMOS图像传感器的新型高动态范围电荷检测概念使用至少一个以穿孔模式工作的晶体管用于电荷检测节点复位。 穿孔操作显着地减少了复位进给，通过该进给导致该信号在节点上提供更高的电压摆幅。 这又允许构建较小的并因此更敏感的电荷检测节点。 通过将冲击穿过操作引起的不完全复位相关联的不希望的伪影通过将CDS信号处理方法并入到信号处理链中被完全去除。 通过CDS技术将不完整的复位工件删除扩展到由大的复位时间常数建模的所有其他复位概念。 冲孔概念适用于复位浮动扩散电荷检测节点以及浮动栅极电荷检测节点。

公开(公告)号：US06229133B1

公开(公告)日：2001-05-08

申请号：US09174183

申请日：1998-10-16

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H04N314

CPC分类号： H04N5/35536 ,  H01L27/14609 ,  H04N5/3535 ,  H04N5/37455

摘要： An image sensing device includes: a light sensing element 20 for providing a signal in response to incident light; a comparator 24 coupled to the photo sensing element 20 for detecting when the signal reaches a reference level VREF; a resetting device 22 coupled to the light sensing element 20 for resetting the light sensing element 20 when the signal reaches the reference level VREF; and a memory device 26 coupled to the comparator 24 for receiving and storing an output from the comparator 24.

摘要翻译： 图像感测装置包括：用于响应于入射光提供信号的光感测元件20; 耦合到光敏元件20的比较器24，用于检测信号何时达到参考电平VREF; 耦合到光感测元件20的复位装置22，用于当信号达到参考电平VREF时复位光感测元件20; 以及耦合到比较器24的存储器件26，用于接收和存储来自比较器24的输出。

公开(公告)号：US5317174A

公开(公告)日：1994-05-31

申请号：US19516

申请日：1993-02-19

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27/146 ,  H01L31/113 ,  H01L27/14

CPC分类号： H01L31/1136 ,  H01L27/14643

摘要： A bulk charge modulated MOSFET for sensing light comprising a semiconductor substrate with a gate region of a first conductivity type formed in the substrate. The gate region forms a potential well for carriers of the first conductivity type. The well is formed at a substantial depth from the surface of the gate region. The carriers are formed responsive to incident light. The gate region collects the carriers generated at depths less than the well. A source region of a second conductivity type is formed in the semiconductor substrate laterally adjacent the gate region. The source region is operable to sense a change in threshold voltage of the MOSFET responsive to the collection of carriers by the gate region. A drain region of the second conductivity type is formed in the layer adjacent the gate region and spaced from the source. The drain region is connected to a voltage source. The voltage source is pulsed to create a large potential well that extends under the gate region from the source to the drain during charge integration period and a smaller potential well during readout period.

摘要翻译： 一种用于感测光的体电荷调制MOSFET，包括形成在衬底中的具有第一导电类型的栅极区域的半导体衬底。 栅极区形成第一导电类型的载流子的势阱。 阱从栅极区域的表面形成在相当深度处。 载体是响应于入射光而形成的。 栅极区域收集在小于井的深度处产生的载流子。 在半导体衬底中横向邻近栅极区域形成第二导电类型的源极区域。 源极区域可操作以响应于栅极区域的载流子的集合来感测MOSFET的阈值电压的变化。 第二导电类型的漏极区域形成在与栅极区域相邻并与源极间隔开的层中。 漏极区域连接到电压源。 电压源被脉冲以产生在电荷积分时段期间从源极到漏极的栅极区域下延伸的大势阱，以及读出期间较小的势阱。

公开(公告)号：US5278656A

公开(公告)日：1994-01-11

申请号：US619629

申请日：1990-11-28

申请人： Jaroslav Hynecek ,  Masao Uehara

发明人： Jaroslav Hynecek ,  Masao Uehara

IPC分类号： A61B1/04 ,  H04N5/225 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/378 ,  H04N5/30

CPC分类号： H04N5/335 ,  H04N2005/2255

摘要： For a buffer amplifier provided near a solid state imaging device for photoelectrically converting an optical image by an image forming optical system and amplifying the signal of the output end, the temperature rise of the solid state imaging device is reduced by reducing the electric power consumption in a non-signal reading out period in which no driving signal is applied against a signal reading out period in which an image signal is output from the output end of this solid state imaging device by applying a driving signal to the solid state imaging device.

摘要翻译： 对于靠近固态成像装置设置的用于通过图像形成光学系统对光学图像进行光电转换并放大输出端的信号的缓冲放大器，通过降低固态成像装置的电力消耗来降低固态成像装置的温度上升 非信号读出期间，其中通过向固态成像装置施加驱动信号，不对来自该固态成像装置的输出端输出图像信号的信号读出期施加驱动信号。

公开(公告)号：US5182623A

公开(公告)日：1993-01-26

申请号：US682858

申请日：1991-04-05

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27/148 ,  H04N5/363 ,  H04N5/372

CPC分类号： H04N3/1575 ,  H01L27/14831 ,  H04N3/1537

摘要： Described is a new high performance CCD image sensor technology which can be used to build a versatile image sensor family with the sensors that have high resolution and high pixel density. The described sensor architectures are based on a new charge super sweep concept which was developed to overcome such common problems as blooming and the image smear. The charge super sweep takes place in very narrow vertical channels located between the photosites similar to the Interline Transfer CCD devices. The difference here is that the charge is never stored in these regions for any significant length of time and is swept out using a new resistive gate traveling wave sweeping technique. The charge super sweep approach also allows the fast charge transfer of several lines of data from the photosites located anywhere in the array into the buffer storage during a single horizontal blanking interval.

摘要翻译： 描述了一种新的高性能CCD图像传感器技术，可用于构建具有高分辨率和高像素密度的传感器的通用图像传感器系列。 所描述的传感器架构基于新的充电超扫描概念，其被开发用于克服诸如开花和图像涂片的常见问题。 电荷超扫描发生在位于类似于Interline Transfer CCD器件的光电子之间的非常窄的垂直通道中。 这里的区别在于，在任何相当长的时间内，电荷从不存储在这些区域中，并且使用新的电阻栅极行波扫描技术扫除。 电荷超扫描方法还允许在单个水平消隐间隔期间将位于阵列中任何位置的光子的几行数据快速电荷传输到缓冲存储器中。

公开(公告)号：US4901129A

公开(公告)日：1990-02-13

申请号：US328723

申请日：1989-03-23

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14603

摘要： A bulk charge modulated transistor threshold sensing element (12) comprises a first region (18) having an enclosed structure, a gate region (24) that is preferably generally endless in shape, and a second region (26) to the interior of the gate region (24). The gate region (24) is doped and biased such that a potential well (100) is formed in the semiconductor substrate (11) a substantial distance from the surface thereof. When light (90) impinges on the element of the invention, carriers (94) collect in the potential well (100) in response thereto. The carriers (94) affect the threshold voltage of the transistor sensor element, and a threshold voltage differential is sensed as the sensing signal.

摘要翻译： 体电荷调制晶体管阈值感测元件（12）包括具有封闭结构的第一区域（18），优选地通常为环形形状的栅极区域（24）和位于栅极内部的第二区域（26） 区域（24）。 栅极区域（24）被掺杂和偏置，使得在半导体衬底（11）中形成与其表面相当距离的势阱（100）。 当光（90）撞击本发明的元件时，响应于此，载体（94）收集在势阱（100）中。 载体（94）影响晶体管传感器元件的阈值电压，并且感测阈值电压差作为感测信号。