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103 条记录 (耗时 0.018 秒)

    Method and apparatus for measuring speed of land vehicle using accelerometer
    81.
    发明申请
    Method and apparatus for measuring speed of land vehicle using accelerometer 有权
    使用加速度计测量陆地车辆速度的方法和装置

    公开(公告)号：US20050139004A1

    公开(公告)日：2005-06-30

    申请号：US10885984

    申请日：2004-07-07

    申请人： Kook-Yeon Lee ,  Hyun-Su Hong ,  Yoon-Deock Lee ,  Jin-Won Kim

    发明人： Kook-Yeon Lee ,  Hyun-Su Hong ,  Yoon-Deock Lee ,  Jin-Won Kim

    IPC分类号： G01P15/02 ,  G01P7/00 ,  G01P15/00

    CPC分类号： G01P7/00

    摘要： Disclosed is an apparatus and a method for measuring the speed of a land vehicle using an accelerometer. The method includes the steps of storing measurement data provided from an accelerometer; analyzing the measurement data to determine whether the vehicle is stopped; calculating a road angle using the measurement data of the accelerometer when it is determined, upon analysis, that the vehicle is moving; determining the sign of the road angle when the road angle is greater than a threshold value; compensating for a gravitational acceleration component included in the measurement data of the accelerometer using the road angle; and calculating the speed of the vehicle based on the acceleration of the vehicle with the gravitational acceleration component compensated. It is possible to reduce the number of expensive gyroscopes needed for a vehicle speed measuring apparatus, thereby reducing the cost of the apparatus.

    摘要翻译： 公开了一种使用加速度计测量陆地车辆的速度的装置和方法。 该方法包括存储从加速度计提供的测量数据的步骤; 分析测量数据以确定车辆是否停止; 当分析确定车辆正在移动时，使用加速度计的测量数据计算道路角度; 当道路角度大于阈值时，确定道路角度的符号; 使用道路角度补偿加速度计的测量数据中包括的重力加速度分量; 并且基于所述重力加速度分量补偿的车辆的加速度来计算车辆的速度。 可以减少车辆速度测量装置所需的昂贵的陀螺仪的数量，从而降低了装置的成本。

    Off-board navigation system and method for calibrating error using the same
    82.
    发明申请
    Off-board navigation system and method for calibrating error using the same 审中-公开
    离线导航系统及使用其进行校准误差的方法

    公开(公告)号：US20050102096A1

    公开(公告)日：2005-05-12

    申请号：US10890706

    申请日：2004-07-14

    申请人： Hyun-Suk Min ,  Kyong-Joon Chun ,  Jin-Won Kim ,  Wuk Kim

    发明人： Hyun-Suk Min ,  Kyong-Joon Chun ,  Jin-Won Kim ,  Wuk Kim

    IPC分类号： G01C25/00 ,  G08G1/0968 ,  G08G1/0969 ,  G01C21/34

    CPC分类号： G08G1/096811 ,  G01C25/00 ,  G08G1/0969

    摘要： An off-board navigation system and method for calibrating an error using the same. A server provided in the off-board navigation system calculates a predetermined path using a pre-stored map in response to a request, generates calibration information based upon the calculated path, and transmits the calculated path and the calibration information. A terminal provided in the off-board navigation system requests that the server calculate the predetermined path, receives the calculated path and the calibration information, compares the calibration information and position information measured by sensors embedded in the terminal, and compensates for the sensors. The off-board navigation system can calibrate a position error between map information and actual traveling information, and hence can improve the accuracy of navigation service.

    摘要翻译： 一种车外导航系统和使用其进行校正错误的方法。 提供在车外导航系统中的服务器响应于请求，使用预先存储的地图计算预定路径，基于计算的路径生成校准信息，并发送所计算的路径和校准信息。 提供在车外导航系统中的终端请求服务器计算预定路径，接收计算的路径和校准信息，比较校准信息和嵌入在终端中的传感器测量的位置信息，并补偿传感器。 车外导航系统可以校准地图信息与实际旅行信息之间的位置误差，从而提高导航服务的准确性。

    Capacitor of semiconductor device
    84.
    发明授权
    Capacitor of semiconductor device 失效
    半导体器件电容器

    公开(公告)号：US06380579B1

    公开(公告)日：2002-04-30

    申请号：US09547940

    申请日：2000-04-11

    申请人： Sang-don Nam ,  Jin-won Kim

    发明人： Sang-don Nam ,  Jin-won Kim

    IPC分类号： H01L27108

    CPC分类号： H01L28/75 ,  H01L28/55

    摘要： A capacitor of a semiconductor device which uses a high dielectric layer and a method of manufacturing the same are provided. The capacitor includes a storage electrode having at least two conductive patterns which overlap each other and a thermally-stable material layer pattern being positioned between the conductive layer patterns. The storage electrode and the thermally-stable material layer pattern are formed by alternately forming a conductive layer and a thermally-stable material layer, and patterning the conductive layer and the thermally-stable material layer to have predetermined shapes. With the present structure, it is possible to prevent the storage electrode from being transformed or broken during a thermal treatment process for forming a high dielectric layer on the storage electrode or in a subsequent high temperature thermal treatment process.

    摘要翻译： 提供了使用高介电层的半导体器件的电容器及其制造方法。 电容器包括具有彼此重叠的至少两个导电图案的存储电极和位于导电层图案之间的热稳定材料层图案。 存储电极和热稳定材料层图案通过交替形成导电层和热稳定材料层而形成，并且将导电层和热稳定材料层图案化以具有预定形状。 利用本结构，可以防止在用于在存储电极上形成高电介质层的热处理工艺中或在随后的高温热处理工艺中存储电极变形或破裂。

    Dual deposition methods for forming contact metallizations, capacitors, and memory devices
    85.
    发明授权
    Dual deposition methods for forming contact metallizations, capacitors, and memory devices 失效
    用于形成接触金属化，电容器和存储器件的双重沉积方法

    公开(公告)号：US5918118A

    公开(公告)日：1999-06-29

    申请号：US931821

    申请日：1997-09-16

    申请人： Jin-Won Kim ,  Cheal-Seong Hwang ,  Sang-In Lee

    发明人： Jin-Won Kim ,  Cheal-Seong Hwang ,  Sang-In Lee

    IPC分类号： H01L21/285 ,  H01L21/02 ,  H01L21/28 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/04 ,  H01L27/108 ,  H01L21/283 ,  H01L21/70

    CPC分类号： H01L27/10852 ,  H01L21/76895 ,  H01L28/60

    摘要： A method for forming a dynamic random access memory device includes the step of forming a memory cell access transistor on a semiconductor substrate wherein the memory cell access transistor includes a source/drain region at a surface of the semiconductor substrate. An insulating layer is formed on the semiconductor substrate and on the memory cell access transistor wherein the insulating layer has a contact hole therein exposing a portion of the source/drain region of the substrate. A first conductive layer is chemical vapor deposited on the exposed portion of the source/drain region of the substrate, and a second conductive layer is physical vapor deposited on the first conductive layer opposite the substrate. A dielectric layer is formed on the second conductive layer opposite the substrate, and a third conductive layer is formed on the dielectric layer opposite the substrate.

    摘要翻译： 一种用于形成动态随机存取存储器件的方法包括在半导体衬底上形成存储单元存取晶体管的步骤，其中存储单元存取晶体管包括在半导体衬底的表面处的源/漏区。 绝缘层形成在半导体衬底和存储单元存取晶体管上，其中绝缘层具有其中暴露衬底的源/漏区的一部分的接触孔。 第一导电层被化学气相沉积在衬底的源极/漏极区域的暴露部分上，并且第二导电层物理气相沉积在与衬底相对的第一导电层上。 在与衬底相对的第二导电层上形成电介质层，并且在与衬底相对的电介质层上形成第三导电层。