中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

128 records (took 0.019 seconds)

    Laser-Phosphor integrated ligth source
    82.
    发明申请
    Laser-Phosphor integrated ligth source 有权

    公开(公告)号：US20220376462A1

    公开(公告)日：2022-11-24

    申请号：US17445938

    申请日：2021-08-25

    Applicant: Kyocera SLD Laser, Inc.

    Inventor： Sten Heikman

    IPC: H01S5/00 ,  H01S5/32 ,  H01S5/22 ,  H01S5/343 ,  H01S5/02224 ,  H01S5/024 ,  H01S5/02257 ,  H01S5/02325

    Abstract: A phosphor integrated laser-based light source includes a thermally conductive material arranged on a package base adjacent to a laser diode chip and an optically transparent material coupled to the thermally conductive material. A groove extends between the thermally conductive material and the optically transport material and is aligned to receive electromagnetic radiation from the laser diode chip. A wavelength conversion material is coupled to the optically transparent material and is configured to receive at least a portion of the electromagnetic radiation emitted into the groove and transmitted through the optically transparent material. A reflective material surrounds sides of the optically transparent material and the wavelength conversion material.

    MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CONTAINING SUBSTRATE
    86.
    发明申请
    MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CONTAINING SUBSTRATE 有权

    公开(公告)号：US20220181841A1

    公开(公告)日：2022-06-09

    申请号：US17552261

    申请日：2021-12-15

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343

    Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    88.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 有权

    公开(公告)号：US20220006256A1

    公开(公告)日：2022-01-06

    申请号：US17377835

    申请日：2021-07-16

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/0234

    Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

    Laser lighting having selective resolution
    89.
    发明授权
    Laser lighting having selective resolution 有权

    公开(公告)号：US11172182B2

    公开(公告)日：2021-11-09

    申请号：US16706508

    申请日：2019-12-06

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Vlad Joseph Novotny ,  Paul Rudy

    IPC: H04N9/77 ,  G02B27/01 ,  G02B26/10 ,  H04N9/31 ,  F21K9/64

    Abstract: In an example, the present invention provides an optical engine apparatus. The apparatus has a laser diode device, the laser diode device characterized by a wavelength ranging from 300 to 2000 nm or any variations thereof. In an example, the apparatus has a lens coupled to an output of the laser diode device and a scanning mirror device operably coupled to the laser diode device. In an example, the apparatus has an un-patterned phosphor plate coupled to the scanning mirror and configured with the laser device; and a spatial image formed on a portion of the un-patterned phosphor plate configured by a modulation of the laser and movement of the scanning mirror device.

Patent Agency Ranking