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公开(公告)号：US20240077901A1
公开(公告)日：2024-03-07
申请号：US18459552
申请日：2023-09-01
Inventor： Masaya KONDO , Yoshikazu FURUTA , Tomohiro NEZUKA
Abstract: A reference voltage generation circuit includes a Zener diode and a current generation circuit connected to the Zener diode in parallel. The current generation circuit includes a resistance voltage divider circuit, a transistor circuit and a voltage control circuit. The resistance voltage divider circuit has a branch portion for branching the current into two paths, and outputs a reference voltage acquired by voltage division through a resistive element. The transistor circuit includes two NPN transistors and a series resistance circuit in which resistive elements are connected in series. The two NPN transistors respectively having collectors, bases and emitters. The collectors are respectively connected to the two paths. The bases have a common connection. The series resistance circuit is connected between a ground and one of the emitters. The voltage control circuit equalizes respective collector potentials of the two NPN transistors.
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公开(公告)号：US20230411260A1
公开(公告)日：2023-12-21
申请号：US18181618
申请日：2023-03-10
Inventor： Kazuki KUWATA , Hiroshi ISHINO , Hirokazu SAMPEI , Masaru NARIKAWA
IPC: H01L23/498 , H01L23/31 , H01L23/29 , H01L21/56
CPC classification number: H01L23/49811 , H01L23/49838 , H01L21/565 , H01L23/293 , H01L23/3114
Abstract: In a semiconductor module, first and second connection terminals and a control terminal are electrically connected to a semiconductor chip. The second connection terminal extends in a first direction in a resin molded part and projects from a predetermined surface of the resin molded part. An internal terminal of the first connection terminal extends in the resin molded part along the first direction and overlaps with the second connection terminal with a predetermined space therebetween in a second direction, and is exposed from an opening portion of the resin molded part. An external terminal of the first connection terminal is connected to the internal terminal at the opening portion and projects outside the resin molded part. The first connection terminal includes a tie bar remaining portion extending from the internal terminal in a direction that intersects the first direction and the second direction.
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公开(公告)号：US11846656B2
公开(公告)日：2023-12-19
申请号：US17834061
申请日：2022-06-07
Inventor： Tomohiro Nezuka , Yoshikazu Furuta , Shotaro Wada
IPC: G01R15/14 , G01R19/252
CPC classification number: G01R15/146 , G01R19/252
Abstract: A current sensor for detecting a current based on a terminal voltage and a resistance value of a shunt resistor, includes: a resistance value correction circuit having: correction resistors; a signal application unit; a voltage detection unit that detects terminal voltages of the shunt resistor and a part of the correction resistors in a first period, and terminal voltages of all of the correction resistors in a second period; and a correction unit that corrects the resistance value for current detection based on a calculated resistance value of the shunt resistor. Resistance values and resistance accuracies of the correction resistors are higher as the plurality of correction resistors are disposed farther from the shunt resistor.
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公开(公告)号：US20230378031A1
公开(公告)日：2023-11-23
申请号：US18181679
申请日：2023-03-10
Inventor： Hiroshi ISHINO , Katsuya KUMAGAI , Masaru NARIKAWA
IPC: H01L23/495 , H01L23/31 , H01L23/00
CPC classification number: H01L23/49555 , H01L23/3107 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/182
Abstract: A semiconductor module includes a semiconductor chip, a resin molded part, and a connection terminal electrically connected to the semiconductor chip. The connection terminal includes an internal terminal sealed in the resin molded part, an external terminal, and a tie bar remaining portion. The internal terminal is extended in a first direction and exposed from an opening portion of the resin molded part. The external terminal is connected to the internal terminal through the opening portion, and projected outside the resin molded part. The tie bar remaining portion extends from the internal terminal in a second direction intersecting the first direction and projects outside the resin molded part to provide a tie bar projecting portion. The connection terminal has a groove portion covered with the resin molded part, between an exposed portion of the internal terminal and the tie bar projecting portion.
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公开(公告)号：US20230375786A1
公开(公告)日：2023-11-23
申请号：US18177393
申请日：2023-03-02
Inventor： HIROSHI ANDO , MASATOSHI TSUJI
CPC classification number: G02B6/34 , G02B6/3616 , B60R1/002
Abstract: An optical member includes a light guide made of a transparent material. The light guide has: an incident surface; an exit surface having exit portions and flat portions; a smooth surface arranged opposite to the flat portions; an upper surface and a lower surface arranged opposite to each other so as to connect the smooth surface and the exit surface; a first protrusion protruding from the upper surface; and a second protrusion protruding from the lower surface. The flat portions reflect the incident light toward the smooth surface by total reflection. The smooth surface reflects the reflected light reflected by the flat portion toward the exit surface by total reflection. The exit portions emit a part of the incident light or a part of light reflected by the smooth surface to the outside.
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Patent Agency Ranking
公开(公告)号：US20230362550A1
公开(公告)日：2023-11-09
申请号：US18181912
申请日：2023-03-10
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Nisshinbo Micro Devices Inc.
Inventor： Tomoya Joke , Tetsuya Enomoto , Hideo Yamada , Shuji Katakami , Takashi Kakefuda , Takahide Usui
IPC: H04R17/00
CPC classification number: H04R17/00
Abstract: An electroacoustic transducer includes a vibrating portion, a slit and an elastic film. The vibrating portion has a fixed end portion and a free end portion, and extends as a cantilever from the fixed end portion toward the free end portion along an extending direction orthogonal to a directivity axis to vibrate in a manner that the free end portion moves along the directivity axis. The slit is formed at two ends of the vibrating portion in a width direction orthogonal to the directivity axis and orthogonal to the extending direction. The elastic film is provided to close the slit in an axial direction that is aligned with the directivity axis. The slit includes a wide portion provided on a free end side and a narrow portion narrower than the wide portion. The elastic film is provided to close the wide portion while not closing the narrow portion.
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公开(公告)号：US20230290833A1
公开(公告)日：2023-09-14
申请号：US18163423
申请日：2023-02-02
Inventor： Hitoshi FUJIOKA , Takeshi KOSHIBA , Norihiro TOGAWA , Takuji ARAUCHI
IPC: H01L29/16 , H01L29/66 , H01L23/544
CPC classification number: H01L29/1608 , H01L23/544 , H01L29/66068 , H01L2223/54426
Abstract: A manufacturing method of a semiconductor device includes preparing a silicon carbide substrate, growing an epitaxial layer, and forming a structure. The silicon carbide substrate has an upper surface on which an alignment mark having a recessed shape is disposed, and a perpendicular line to the upper surface is inclined with respect to a [0001] direction toward a [11-20] direction. The epitaxial layer is grown on the upper surface and covers the alignment mark. The structure is formed on or above the upper surface at a position apart from the alignment mark by an interval P in the [11-20] direction along the upper surface. The interval P satisfies a relationship of D/tan θ
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公开(公告)号：US20230238281A1
公开(公告)日：2023-07-27
申请号：US18153674
申请日：2023-01-12
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , HAMAMATSU PHOTONICS K.K. , National University Corporation Tokai National Higher Education and Research System
Inventor： MASATAKE NAGAYA , SHOSUKE NAKABAYASHI , DAISUKE KAWAGUCHI , TOSHIKI YUI , CHIAKI SASAOKA , SHOICHI ONDA , JUN KOJIMA
IPC: H01L21/784 , B23K26/53 , H01L21/02
CPC classification number: H01L21/784 , B23K26/53 , H01L21/02013 , B23K2101/40
Abstract: A method of manufacturing a gallium nitride substrate includes preparation of a gallium nitride wafer, formation of a transformation layer, and formation of the gallium nitride substrate. The gallium nitride has a first main surface and a second main surface on a side opposite from the first main surface. The gallium nitride wafer is made of a hexagonal crystal, and each of the first main surface and the second main surface is a {1-100} m-plane of the hexagonal crystal. The transformation layer is formed along a planar direction of the gallium nitride wafer by emitting a laser beam into the gallium nitride wafer. The gallium nitride substrate is formed from the gallium nitride wafer by dividing the gallium nitride wafer at the transformation layer. In the formation of the transformation layer, the laser beam is emitted to form an irradiation mark for forming the transformation layer.
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公开(公告)号：US20230210010A1
公开(公告)日：2023-06-29
申请号：US17972622
申请日：2022-10-25
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Nisshinbo Micro Devices Inc.
Inventor： Tetsuya ENOMOTO , Takahide USUI , Naokatsu IKEGAMI , Shuji KATAKAMI
IPC: H01L41/08 , H01L41/18 , H01L41/047 , H01L41/083 , B06B1/06
CPC classification number: H01L41/0805 , H01L41/18 , H01L41/047 , H01L41/083 , B06B1/06
Abstract: A piezoelectric device includes a support member, and a vibrating portion provided on a support surface of the support member. The vibrating portion includes, in addition to a first electrode, a piezoelectric film and a second electrode arranged in a stacking direction, an insulating film configured to increase an electric resistance value between the first and second electrodes. The first electrode is provided on the support surface of the support member, and includes an opening penetrating the first electrode in the stacking direction. The piezoelectric film is provided on the first electrode to extend across the opening. The second electrode is provided on the piezoelectric film. The insulating film is provided at a position between the first electrode and the second electrode, and at least a part of the insulating film overlaps with the opening in the stacking direction.
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公开(公告)号：US20230203709A1
公开(公告)日：2023-06-29
申请号：US18069366
申请日：2022-12-21
Inventor： HIROAKI FUJIBAYASHI , MASATAKE NAGAYA , JUNJI OHARA , SHINICHI HOSHI , TAKASHI KANEMURA
IPC: C30B29/36 , H01L29/16 , H01L21/683 , H01L21/78 , C30B25/20
CPC classification number: C30B29/36 , H01L29/1608 , H01L21/6836 , H01L21/78 , H01L21/7813 , C30B25/20 , H01L2221/68327
Abstract: A silicon carbide wafer includes a base wafer that is made of silicon carbide and doped with an n-type impurity, and an epitaxial layer that is arranged on a main surface of the base wafer, made of silicon carbide and doped with an n-type impurity. The base wafer has a thickness t1 and an average impurity concentration n1, and the epitaxial layer has a thickness t2 and an average impurity concentration n2. The base wafer and the epitaxial layer are configured so as to satisfy a mathematical formula 1:
−0.0178
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