公开(公告)号：US11183397B2

公开(公告)日：2021-11-23

申请号：US17071293

申请日：2020-10-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US20210307151A1

公开(公告)日：2021-09-30

申请号：US17346754

申请日：2021-06-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20210272839A1

公开(公告)日：2021-09-02

申请号：US17183862

申请日：2021-02-24

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Manuel Sohn ,  Rolf Bremensdorfer ,  Silke Hamm ,  Alex Wansidler

IPC: H01L21/687 ,  C23C14/30 ,  C23C14/50

Abstract: Support plates and support structures for thermal processing systems to heat workpieces are provided. In one example, a thermal processing apparatus is provided that includes a plurality of heat sources, a rotatable support plate, and a support structure having a flexibility in the radial direction of the rotatable support plate that is greater than a flexibility in the azimuthal direction of the rotatable support plate. Also provided are support plates for supporting a workpiece in a thermal processing apparatus. The support plate can include a base defining a radial direction and an azimuthal direction and at least one support structure extending from the base having a flexibility in the radial direction of the base that is greater than a flexibility in the azimuthal direction of the base.

公开(公告)号：US11101142B2

公开(公告)日：2021-08-24

申请号：US16893515

申请日：2020-06-05

Applicant: Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

Inventor： Paul Timans

IPC: H01L21/324 ,  H01L21/67

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.

公开(公告)号：US11062910B2

公开(公告)日：2021-07-13

申请号：US16444146

申请日：2019-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/30 ,  C23C16/452 ,  H01L21/311 ,  H01L21/3213 ,  B01D67/00 ,  C23F1/12 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/768 ,  C23F4/00

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US11049692B2

公开(公告)日：2021-06-29

申请号：US16514464

申请日：2019-07-17

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Stephen E. Savas ,  Shawming Ma

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/306 ,  H01J37/32 ,  B81C1/00

Abstract: Plasma processing apparatus and associated methods are provided. In one example, a method can include admitting a process gas into a plasma chamber. The method can include exciting with RF energy an inductive coupling element to initiate ignition of a plasma induced in the process gas. The method can include adjusting an RF voltage of an electrostatic shield located between the inductive coupling element and the plasma chamber. The electrostatic shield can have a stray capacitance to a ground reference. The method can include conducting an ion-assisted etching process on the workpiece based at least in part on the RF voltage of the electrostatic shield.

公开(公告)号：US10957563B2

公开(公告)日：2021-03-23

申请号：US15380191

申请日：2016-12-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Joachim Janisch ,  Manuel Mueller

IPC: H01L21/67 ,  F27D25/00 ,  H05B3/00

Abstract: Systems and methods for reducing contamination on reflective mirrors disposed on chamber walls in a millisecond anneal system are provided. In one example implementation, the reflective mirrors can be heated by one or more of (1) heating the fluid in the closed fluid system for regulating the temperature of the reflective mirrors; (2) electrical cartridge heater(s) or heater ribbon(s) attached to the reflective mirrors; and/or (3) use of lamp light inside the chamber.

公开(公告)号：US20210066088A1

公开(公告)日：2021-03-04

申请号：US16904669

申请日：2020-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

IPC: H01L21/311 ,  H01L21/02

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

公开(公告)号：US20210066047A1

公开(公告)日：2021-03-04

申请号：US17001751

申请日：2020-08-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Tsai Wen Sung ,  Chun Yan ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/311

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias electrode to generate a second mixture and exposing the workpiece to the second mixture to etch a least a portion of the material layer and to form a film on at least a portion of the material layer.

公开(公告)号：US20210020413A1

公开(公告)日：2021-01-21

申请号：US16928220

申请日：2020-07-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Hua Chung ,  Bin Dong ,  Xinliang Lu ,  Haichun Yang ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/311

Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.