Abstract:
A method and system for launching multiple applications simultaneously on a device under the control of application switching framework so that the operating system is only running one task for all the applications is provided. A single task is run under the control of an operating system. An application manager is run within the task. One or more applications are launched within the task under the control of the application manager. One of the applications is made the current application by switching, under user control, among the launched applications. A list of application descriptors is maintained for all the launched applications, and when switching, the application descriptor of one of the applications is used for displaying the application to a user on a screen. Each application descriptor contains forms of the launched applications. Each of the application descriptors contains a tree of forms with one root or parent form. A form represents an image to be displayed to the user. The image consists of text, pictures, bitmaps, or menus.
Abstract:
A computer system, graphical user interface, and method to search for previously published advertisements are provided. The computer system includes an advertisement index, a search engine, and an advertisement platform. The advertisement index organizes the previously published advertisements based on a media publisher. The search engine allows a user to search for previously published advertisements. The advertisement platform provides the previously published advertisements to the search engine based on the search request that the users submit to the search engine.
Abstract:
A load store advisory program sets a breakpoint within a portion of a program, determines if the breakpoint will cause unexpected behavior, and generates a warning if it is determined that the breakpoint will cause unexpected behavior. The unexpected behavior may be the result of setting a breakpoint within a load-store sequence that, because of the breakpoint, will repeatedly fail.
Abstract:
Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.
Abstract:
Optical fiber preforms which can be drawn into optical fibers of desired dimensions are fabricated by applying a vacuum to a cladding tube and drawing molten glass from a crucible into a bore of the cladding tube while a portion of the cladding tube is within a furnace preferably through a small hole in the top of the furnace. The method and apparatus are particularly applicable to highly non-linear fiber (HNLF) glasses and highly doped or rare earth glasses since materials therein are generally expensive and only a small quantity of molten glass is required but can be applied to virtually any optical fiber construction where the core glass has a lower melting or softening point than that of the cladding tube. Sources of contamination, breakage and other preform defects are substantially avoided and toxic substances, if present are readily confined.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
A method of dispersing particles in a medium. The method includes providing a first particle/solvent dispersion comprising the particles and a first solvent, adding a second solvent to the first particle/solvent dispersion to form a second particle/solvent dispersion, wherein the first solvent and the second solvent are miscible, and extracting substantially all of the first solvent from the second particle/solvent dispersion to form a third particle/solvent dispersion.
Abstract:
Methods for producing ruthenium perovskite represented by a chemical formula LaRuO3, wherein La is lanthanum to which twelve oxygen ions are coordinated, Ru is ruthenium to which six oxygen ions are coordinated, and O is oxygen, which comprises reacting an aqueous mixed metal ion solution containing metal ions of La and Ru with a precipitate-forming liquid in a reaction container to co-precipitate hydroxides of La and Ru, and subjecting the precipitate to a heat treatment. Alternatively, the co-precipitated mass is deposited on a suitable carrier and subsequently heated to form supported LaRuO3. The co-precipitated La and Ru hydroxides can also be directly formed on a carrier by precipitation from a homogenous solution containing La, Ru and urea. This provides a uniform dispersion of co-precipitated hydroxides on a carrier, subsequent heating of which results in formation of supported LaRuO3. The materials thus obtained are to be used as efficient catalysts for certain reactions of environmental importance. These synthesis methods can also be used for the improved synthesis of LaRuO3 for other applications.