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    SEMICONDUCTOR DEVICE, FABRICATION METHOD OF THE SEMICONDUCTOR DEVICES
    81.
    发明申请
    SEMICONDUCTOR DEVICE, FABRICATION METHOD OF THE SEMICONDUCTOR DEVICES 审中-公开
    半导体器件，半导体器件的制造方法

    公开(公告)号：US20130075754A1

    公开(公告)日：2013-03-28

    申请号：US13680442

    申请日：2012-11-19

    Applicant: KOITO MANUFACTURING CO., LTD. ,  TOKYO UNIVERSITY OF SCIENCE

    Inventor： Akihiro Nomura ,  Kazuhiro Ohkawa ,  Akira Hirako

    IPC: H01L29/20 ,  H01L21/20

    CPC classification number: H01L29/2003 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/20 ,  H01L33/0066 ,  H01L33/007

    Abstract: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer.

    Abstract translation: 在半导体器件中，YAG衬底形成为任何表面取向（100），（110）和（111）的单晶衬底。 在半导体器件的制造中，首先将TMAl气体馈送到YAG衬底上，以形成由III族元素构成的铝成核层。 然后，将NH 3气体送入成核层。 这使得成核层的表面成为V族元素，然后形成Al-III-V族化合物层。 然后，将TMAl气体和NH 3气体的混合气体供给到III-V族化合物层上，形成另一组III-V族化合物层。 最后，III族氮化物半导体层在III族化合物层上晶体生长。

    Remedy for Chronic Inflammation and Antibody to be Used Therein
    82.
    发明申请
    Remedy for Chronic Inflammation and Antibody to be Used Therein 有权
    慢性炎症和抗体用于其中的补救措施

    公开(公告)号：US20130071929A1

    公开(公告)日：2013-03-21

    申请号：US13678071

    申请日：2012-11-15

    Applicant: TOKYO UNIVERSITY OF SCIENCE EDUCATION

    Inventor： Fumio Fukai

    IPC: C12N5/078

    CPC classification number: C12N5/0634 ,  C07K16/18 ,  C07K2317/76

    Abstract: The invention provides a remedy for chronic inflammation and an anti-TNIIIA2 antibody to be used therein. The remedy includes an antibody recognizing TNIIIA2, that is a peptide derived from a partial sequence A2 of a human tenascin-C fibronectin III-like repetitive sequence and having the amino acid sequence RSTDLPGLKAATHYTITIRGVC (SEQ ID NO: 1).

    Abstract translation: 本发明提供慢性炎症的补救措施和其中使用的抗TNIIIA2抗体。 补救方法包括识别TNIIIA2的抗体，其是衍生自人腱生蛋白-C纤连蛋白III类似重复序列的部分序列A2并具有氨基酸序列RSTDLPGLKAATHYTITIRGVC（SEQ ID NO：1）的肽。

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