摘要:
A compound oxide superconductor represented by the general formula:Bi.sub.4+d (Sr.sub.1-x, Ca.sub.x).sub.m Cu.sub.n O.sub.p+yin which,"d" is an amount of excess bismuth and satisfies a range of 0
摘要:
Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.
摘要:
A now superconducting material comprising a compound oxide represented by the general formula:(Ba, Ca).sub.x (.alpha., Dy).sub.1-x Tl.sub.y Cu.sub.1-y O.sub.3-zwherein".alpha." represents Y or La;the atomic ratio of Ca to Ba is between 1% and 90%;the atomic ratio of Dy to .alpha. is between 1% and 90%;x, y and z are within the ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z
摘要:
A tunnel junction type superconducting device includes a pair of superconductor electrodes formed of compound oxide superconductor material, and a metal layer of a high electric conductivity formed between the pair of superconductor electrodes so as to maintain the pair of superconductor electrodes separate from each other. The pair of superconductor electrodes is separated from each other by a distance within a range of 3 nm to 70 nm by action of the metal layer.
摘要:
A process for depositing a superconducting thin film composed mainly of compound oxide such as LnBa.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) on a substrate such as MgO, SrTiO.sub.3 or silicon by sputtering technique, characterized in that a negative bias is applied to the substrate during the sputtering stage without heating the substrate.
摘要:
A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
摘要:
A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared from an oxide containing Ba, Y, and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form by sputtering a superconducting thin film on a substrate at a temperature of 600.degree. to 800.degree. C. in an atmosphere having total gas pressure of 1.times.10.sup.-2 to 5.times.10.sup.-2 Torr. and containing Ar and O.sub.2 with an O.sub.2 content of 5 to 80 vol. %. The thin film thus formed is subjected to heat treatment at a temperature of 600.degree. to 930.degree. C. for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4.degree. C./min. The film forming surface of the substrate is chosen from the (100) surface or the (110) surface of a single crystal substrate which is lattice-matched with the (100) surface or the (110) surface of crystalline Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-n, where n represents a number in the range 0.ltoreq.n
摘要:
A method for producing a superconducting article. An alloy consisting of metal elements, such as Y, Ba and Cu which are constituent elements of a superconducting compound oxide to be produced is oxidized so that a surface of the alloy is converted to the superconducting compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta..
摘要:
A method of preparing a high Tc superconducting fiber is disclosed, which comprises drawing into fiber form a core filament of a crystalline oxide, continuously depositing on the heated core filament a high Tc superconducting thin film and then depositing a protective layer on the outer surface of the high Tc superconducting thin film.
摘要:
A process for producing a superconducting thick film including steps comprising subjecting a powder mixture of oxides or carbonates of Ba, Y and Cu each having an average particle size of less than 5 .mu.m to preliminary sintering, pulverizing the preliminary sintered mass into a powder having an average particle size of less than 10 .mu.m, and then admixing the pulverized powder with an organic vehicle to prepare a paste which is applied on a substrate and is sintered finally. The preliminary sintering is carried out at a temperature ranging from 700.degree. to 950.degree. C., while the final sintering is carried out at a temperature ranging from 800.degree. C. to 1,000.degree. C.