Superconducting device composed of oxide superconductor material
    84.
    发明授权
    Superconducting device composed of oxide superconductor material 失效
    超导体由氧化物超导体材料组成

    公开(公告)号:US5247189A

    公开(公告)日:1993-09-21

    申请号:US845752

    申请日:1992-03-02

    IPC分类号: H01L39/24

    CPC分类号: H01L39/2496 H01L39/2467

    摘要: A tunnel junction type superconducting device includes a pair of superconductor electrodes formed of compound oxide superconductor material, and a metal layer of a high electric conductivity formed between the pair of superconductor electrodes so as to maintain the pair of superconductor electrodes separate from each other. The pair of superconductor electrodes is separated from each other by a distance within a range of 3 nm to 70 nm by action of the metal layer.

    摘要翻译: 隧道结型超导装置包括由复合氧化物超导体材料形成的一对超导体电极和形成在该对超导体电极之间的高电导率的金属层,以便保持该对超导体电极彼此分离。 一对超导体电极通过金属层的作用在3nm〜70nm的范围内彼此分开。

    Method of preparing thin film of superconductor
    87.
    发明授权
    Method of preparing thin film of superconductor 失效
    制备超导体薄膜的方法

    公开(公告)号:US5206214A

    公开(公告)日:1993-04-27

    申请号:US833576

    申请日:1992-02-10

    IPC分类号: C30B23/02 H01L39/24

    摘要: A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared from an oxide containing Ba, Y, and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form by sputtering a superconducting thin film on a substrate at a temperature of 600.degree. to 800.degree. C. in an atmosphere having total gas pressure of 1.times.10.sup.-2 to 5.times.10.sup.-2 Torr. and containing Ar and O.sub.2 with an O.sub.2 content of 5 to 80 vol. %. The thin film thus formed is subjected to heat treatment at a temperature of 600.degree. to 930.degree. C. for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4.degree. C./min. The film forming surface of the substrate is chosen from the (100) surface or the (110) surface of a single crystal substrate which is lattice-matched with the (100) surface or the (110) surface of crystalline Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-n, where n represents a number in the range 0.ltoreq.n

    摘要翻译: 一种通过溅射在衬底上制备超导体薄膜的方法。 通过将Cu / Y的原子比为2.5〜3.5,Ba / Y为1.8〜2.2的Ba,Y,Cu的氧化物制成的靶用于在600℃的温度下在基板上溅射超导薄膜 至800℃,总气体压力为1×10 -2至5×10 -2乇。 并含有O含量为5至80体积%的Ar和O 2。 %。 将这样形成的薄膜在600〜930℃的温度下进行1〜30小时的热处理。 热处理后的薄膜以不高于4℃/分钟的速度冷却。 基板的成膜表面选自与晶体Y1Ba2Cu3O7-n的(100)表面或(110)表面晶格匹配的单晶衬底的(100)表面或(110)表面,其中 n表示0