利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

53 条记录 (耗时 0.021 秒)

    Method of preparing thin film of superconductor
    8.
    发明授权
    Method of preparing thin film of superconductor 失效
    制备超导体薄膜的方法

    公开(公告)号：US5206214A

    公开(公告)日：1993-04-27

    申请号：US833576

    申请日：1992-02-10

    申请人： Naoji Fujimori ,  Keizo Harada ,  Shuji Yazu ,  Tetsuji Jodai

    发明人： Naoji Fujimori ,  Keizo Harada ,  Shuji Yazu ,  Tetsuji Jodai

    IPC分类号： C30B23/02 ,  H01L39/24

    CPC分类号： H01L39/2435 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S505/731

    摘要： A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared from an oxide containing Ba, Y, and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form by sputtering a superconducting thin film on a substrate at a temperature of 600.degree. to 800.degree. C. in an atmosphere having total gas pressure of 1.times.10.sup.-2 to 5.times.10.sup.-2 Torr. and containing Ar and O.sub.2 with an O.sub.2 content of 5 to 80 vol. %. The thin film thus formed is subjected to heat treatment at a temperature of 600.degree. to 930.degree. C. for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4.degree. C./min. The film forming surface of the substrate is chosen from the (100) surface or the (110) surface of a single crystal substrate which is lattice-matched with the (100) surface or the (110) surface of crystalline Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-n, where n represents a number in the range 0.ltoreq.n

    摘要翻译： 一种通过溅射在衬底上制备超导体薄膜的方法。 通过将Cu / Y的原子比为2.5〜3.5，Ba / Y为1.8〜2.2的Ba，Y，Cu的氧化物制成的靶用于在600℃的温度下在基板上溅射超导薄膜 至800℃，总气体压力为1×10 -2至5×10 -2乇。 并含有O含量为5至80体积％的Ar和O 2。 ％。 将这样形成的薄膜在600〜930℃的温度下进行1〜30小时的热处理。 热处理后的薄膜以不高于4℃/分钟的速度冷却。 基板的成膜表面选自与晶体Y1Ba2Cu3O7-n的（100）表面或（110）表面晶格匹配的单晶衬底的（100）表面或（110）表面，其中 n表示0

    Method and apparatus for producing thin film of high to superconductor compound having large area
    9.
    发明授权
    Method and apparatus for producing thin film of high to superconductor compound having large area 失效
    用于生产面积大的高超导体化合物薄膜的方法和装置

    公开(公告)号：US4866032A

    公开(公告)日：1989-09-12

    申请号：US192903

    申请日：1988-05-12

    申请人： Naoji Fujimori ,  Keizo Harada ,  Shuji Yazu ,  Tetsuji Jodai

    发明人： Naoji Fujimori ,  Keizo Harada ,  Shuji Yazu ,  Tetsuji Jodai

    IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/46 ,  C23C14/56

    CPC分类号： C23C14/562 ,  C23C14/35 ,  Y10S505/816

    摘要： A thin film of a preselected compound having a large area is continuously produced on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of a substrate by sputtering, comprising the steps of:rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position,at the first position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, andat the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a part of the substrate is positioned in the path of the sputtered elements,whereby the elementary composition of the first target member at the second position is adjusted to the preselected composition.

    Process for depositing a superconducting thin film
    10.
    发明授权
    Process for depositing a superconducting thin film 失效
    沉积超薄膜的工艺

    公开(公告)号：US5057201A

    公开(公告)日：1991-10-15

    申请号：US462983

    申请日：1990-01-10

    申请人： Nobuhiko Fujita ,  Naoji Fujimori ,  Hideo Itozaki ,  Saburo Tanaka ,  Keizo Harada ,  Tetsuji Jodai

    发明人： Nobuhiko Fujita ,  Naoji Fujimori ,  Hideo Itozaki ,  Saburo Tanaka ,  Keizo Harada ,  Tetsuji Jodai

    IPC分类号： C04B35/45 ,  C23C14/08 ,  C23C14/34 ,  C23C14/40 ,  H01L39/24

    CPC分类号： C23C14/3414 ,  C04B35/4504 ,  C23C14/087 ,  H01L39/2435 ,  Y10S505/816 ,  Y10S505/818 ,  Y10S505/819

    摘要： This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 5.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr and at a partial pressure of O.sub.2 ranging from 0.5.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr. The obtained thin film may be further heat-treated at a temperature ranging from 250.degree. C. to 1,700.degree. C., preferably from 250.degree. C. to 1,200.degree. C.