Abstract:
A color filter substrate, a manufacturing method thereof and a display device are provided. The color filter substrate includes: a base substrate; a black matrix on the base substrate, the black matrix including a plurality of openings and a bank surrounding each opening; a color filter layer in each opening; a first planarization layer covering the color filter layer, and the bank protruding relative to the first planarization layer in a direction away from the base substrate; a second planarization layer covering both the first planarization layer and the bank, the second planarization layer including a first surface distal to the base substrate; and a grating layer on the second planarization layer. The first surface of the second planarization layer includes a first portion and a second portion, an orthographic projection of the first portion on the base substrate at least partially overlaps with an orthographic projection of the plurality of openings on the base substrate, an orthographic projection of the second portion on the base substrate at least partially overlaps with an orthographic projection of the bank on the base substrate, and a vertical distance between the first portion and a surface of the base substrate close to the second planarization layer is greater than a vertical distance between the second portion and the surface of the base substrate close to the second planarization layer.
Abstract:
A display panel is provided. The display panel includes a base substrate; a first conductive layer on the base substrate, and in an encapsulated area and a peripheral area of the display panel; a second conductive layer on a side of the first conductive layer away from the base substrate, and in the encapsulated area and the peripheral area; an organic insulating layer between the first conductive layer and the second conductive layer, and limited in the encapsulated area; a first inorganic insulating layer between the first conductive layer and the second conductive layer, and on a side of the organic insulating layer away from the base substrate; and a second inorganic insulating layer between the organic insulating layer and the first conductive layer. The first inorganic insulating layer covers the organic insulating layer.
Abstract:
An array substrate includes a flexible base substrate; a buffer layer on the flexible base substrate and continuously extending from a display area into a peripheral area, including a first portion substantially extending throughout the display area and a second portion in the peripheral area, the first portion and the second portion being parts of an integral layer, an organic insulating layer substantially extending throughout but limited in the display area and on a side of the buffer layer away from the flexible base substrate; an inorganic insulating layer limited in the peripheral area and on a side of the buffer layer away from the flexible base substrate; a planarization layer on a side of the organic insulating layer away from the buffer layer, and a plurality of light emitting elements on a side of the planarization layer away from the organic insulating layer.
Abstract:
The present application discloses a display panel having an array of a plurality of subpixels. The display panel includes a plurality of light modulators configured to modulate display contrast of the display panel. Each of the plurality of light modulators is in a light modulation region configured to allow light transmitting through the display panel. Light transmittance in the light modulation region is controlled by a first gate line and a first data line for driving image display in a first subpixel of the plurality of subpixels.
Abstract:
A display panel is provided. The display panel includes a base substrate; a first conductive layer on the base substrate, and in an encapsulated area and a peripheral area of the display panel; a second conductive layer on a side of the first conductive layer away from the base substrate, and in the encapsulated area and the peripheral area; an organic insulating layer between the first conductive layer and the second conductive layer, and limited in the encapsulated area; a first inorganic insulating layer between the first conductive layer and the second conductive layer, and on a side of the organic insulating layer away from the base substrate; and a second inorganic insulating layer between the organic insulating layer and the first conductive layer. The first inorganic insulating layer covers the organic insulating layer.
Abstract:
A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.
Abstract:
A method for fabricating a thin film transistor includes providing a substrate (100); forming a semiconductor layer (105) over the substrate (100); forming a source-drain metal layer (106) over the semiconductor layer (105); applying one patterning process to the semiconductor layer (105) and the source-drain metal layer (106) to form an active layer (1), a source electrode (2), and a drain electrode (3); forming a gate insulating layer (101) and an interlayer insulating layer (102) that cover the active layer (1), the source electrode (2), and the drain electrode (3); applying a patterning process to the interlayer insulating layer (102) to form a first window (10) in the interlayer insulating layer (102) to expose a portion of the gate insulating layer (101); and forming a gate electrode (4) in the first window (10). An orthogonal projection of the gate electrode (4) on the substrate (100) is in an orthogonal projection of the active layer (1) on the substrate (100).
Abstract:
A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.
Abstract:
An array substrate and a method for fabricating the same, and a display device are disclosed. The array substrate comprises light-transmissive regions for display and shading regions, a plurality of thin film transistors are provided in the shading region, the thin film transistor comprises: a base substrate; an active layer, a gate insulating layer, a gate and a passivation layer sequentially provided on the base substrate; and a source and a drain provided on the passivation layer, the source and the drain comprise a conductive shading layer connected to the active layer and a copper layer provided on the conductive shading layer, the conductive shading layer is provided between the active layer and the copper layer, and at least a part of region of the shading region other than the source and the drain is provided with the conductive shading layer.
Abstract:
The invention provides a vinyl ether group-containing copolymer, preparation process and use thereof. The copolymer comprises of the structural units represented by the following general formulae I, II and III, wherein, R1 is O or HN, R2 is an alkyl group with a carbon atom number of 1-4, cyclohexyl or a group represented by the following general formula IV (m represents a positive integer of 1-3), n is a positive integer of 1-4, the molar numbers of the structural units represented by the general formulae I, II and III are x, y and z, respectively, and x:y:z=3-8:1-4:1-5, the weight average molecular weight of the copolymer is 5000-20000. A color light blocking agent added with the copolymer can increase sensitivity. Furthermore, the copolymer has solubility in an alkaline solution, and thus, the color light blocking agent added with the copolymer has a superior developing property.