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公开(公告)号：US11830763B2
公开(公告)日：2023-11-28
申请号：US17278855
申请日：2020-07-24
Inventor： Shan Zhang , Lianjie Qu , Yonglian Qi , Hebin Zhao
IPC: H01L21/765 , H01L21/762 , H01L21/683 , H01L27/12 , H01L29/66 , H01L29/786 , G06V40/13
CPC classification number: H01L21/76254 , H01L21/6835 , H01L27/127 , H01L29/66772 , H01L29/78654 , G06V40/1318 , H01L2221/68368
Abstract: A method of manufacturing thin film transistor(s) includes: providing a monocrystalline silicon wafer, the monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other; forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness; providing a substrate, and transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer; and patterning the monocrystalline silicon film transferred to the substrate to form active layer(s) of the thin film transistor(s).
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2.发明授权公开(公告)号：US11257995B2
公开(公告)日：2022-02-22
申请号：US16080592
申请日：2018-03-20
Inventor： Yonglian Qi , Lianjie Qu , Hebin Zhao , Bingqiang Gui , Xianxue Yang , Shuai Liu , Guangdong Shi
IPC: H01L33/60 , F21V8/00 , G02F1/13357
Abstract: The present application provides an optical modulating device having a light transmissive region and a light blocking region. The optical modulating device includes a base substrate; a plurality of protrusions on the base substrate in the light transmissive region and configured to allow light emitting out of a side of the optical modulating device; and a reflective layer on the base substrate in the light blocking region and configured to block light from emitting out of the side of the optical modulating device.
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公开(公告)号：US11152436B2
公开(公告)日：2021-10-19
申请号：US16082049
申请日：2018-02-12
Inventor： Shuai Liu , Yun Qiu , Hebin Zhao , Lianjie Qu , Yonglian Qi , Weiwei Tong , Guangdong Shi , Bin Yan , Tao Liu
Abstract: A display panel, fabrication method thereof, and a display device. The display panel includes a substrate and a plurality of pixels disposed on the substrate; each pixel includes a pixel circuit disposed on the substrate; the display panel further includes a pixel defining layer covering the pixel circuit; a surface of the pixel defining layer facing away from the pixel circuit is provided with a plurality of grooves; the plurality of grooves are in one-to-one correspondence with the plurality of pixels; each of the grooves is provided with a light emitting diode electrically connected to the pixel circuit.
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公开(公告)号：US11101368B2
公开(公告)日：2021-08-24
申请号：US16638924
申请日：2019-03-05
Inventor： Lianjie Qu , Hebin Zhao , Yonglian Qi , Yun Qiu , Dan Wang
IPC: H01L29/66 , H01L21/02 , H01L29/786 , H01L29/45 , H01L29/417 , H01L29/49
Abstract: A method of forming a crystallized semiconductor layer includes forming an insulating crystallization inducing layer on a base substrate; forming a semiconductor material layer on a side of the insulating crystallization inducing layer away from the base substrate by depositing a semiconductor material on the insulating crystallization inducing layer, the semiconductor material being deposited at a deposition temperature that induces crystallization of the semiconductor material; forming an alloy crystallization inducing layer including an alloy on a side of the semiconductor material layer away from the insulating crystallization inducing layer; and annealing the alloy crystallization inducing layer to further induce crystallization of the semiconductor material to form the crystallized semiconductor layer. Annealing the alloy crystallization inducing layer is performed to enrich a relatively more conductive element of the alloy to a side away from the base substrate, thereby forming an annealed crystallization inducing layer.
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公开(公告)号：US10754247B2
公开(公告)日：2020-08-25
申请号：US15941920
申请日：2018-03-30
Inventor： Yonglian Qi , Lianjie Qu , Bingqiang Gui , Hebin Zhao , Yun Qiu
IPC: G03F7/09 , G03F7/20 , G03F7/42 , G02B5/18 , G02B5/30 , G02F1/1335 , H01L51/52 , C23F4/00 , G03F7/00
Abstract: The present disclosure proposes a manufacturing method for a metal grating, a metal grating, and a display device. The manufacturing method comprises: forming a metal layer, an antireflective layer and a deep UV photoresist layer sequentially on a base substrate; etching the deep UV photoresist layer by a photolithography process, so as to form a grating mask pattern; etching the antireflective layer by a dry etching process with the help of the grating mask pattern, so as to form an etch mask pattern identical to the grating mask pattern; peeling off the grating mask pattern; etching the metal layer by a dry etching process with the help of the etch mask pattern, so as to form metal grating strips; and removing the etch mask pattern, thus forming a metal grating.
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Patent Agency Ranking
公开(公告)号：US10254581B2
公开(公告)日：2019-04-09
申请号：US14348444
申请日：2013-06-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yonglian Qi , Shi Shu , Guanbao Hui
IPC: G02B5/20 , G02F1/1335
Abstract: A fabricating method of color filter substrate includes a step of forming a black matrix pattern and a color filter layer pattern on a substrate. The black matrix pattern partitions a plurality of sub-pixel regions on the substrate, the color filter layer covers over the plurality of sub-pixel regions, the sub-pixel region includes a transmissive region and/or a reflective region. Before forming the color filter layer pattern the fabricating method further comprises a step of forming a plurality of recesses on the substrate. Each transmissive region in the sub-pixel regions corresponds to a respective recess in terms of location. Correspondingly, the invention provides a color filter substrate fabricated by such fabricating method, as well as a display device comprising such color filter substrate. The fabricating method as provided by the present invention can achieve an effect of color coordination and reduce the number of processes and the thickness of the planarizing protective layer.
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7.发明申请公开(公告)号：US20190011780A1
公开(公告)日：2019-01-10
申请号：US15745043
申请日：2017-08-02
Inventor： Huijuan Wang , Xue Dong , Yonglian Qi , Fei Wang , Zhenhua Lv , Hongshu Zhang
IPC: G02F1/1335 , F21V8/00
Abstract: The present disclosure discloses a backlight and a manufacturing method thereof, a light guide plate and a manufacturing method thereof and a display device. The backlight is a direct type backlight, and the backlight includes: a light guide plate having a main body of a plate shape, a plurality of light emitting units that are placed toward to a plane side of the light guide plate; where the light guide plate comprises a Quantum Dot (QD) layer on a first surface of the main body wherein the first surface is substantially flat.
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公开(公告)号：US20180239196A1
公开(公告)日：2018-08-23
申请号：US15572458
申请日：2017-04-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tingting Zhou , Bin Zhang , Xiaolong He , Yonglian Qi , Jiushi Wang
IPC: G02F1/1335 , G02F1/1337 , B32B27/20 , G02B5/22 , G02F1/017
CPC classification number: G02F1/133609 , B32B27/20 , C09K19/60 , G02B5/201 , G02B5/223 , G02F1/017 , G02F1/133514 , G02F1/1337 , G02F2001/01791 , G02F2202/36 , H05B33/14 , Y10T428/10 , Y10T428/1036
Abstract: Provided are a color film, a substrate and a display device. The color film is used for transmitting a light with one color of three primary colors, and comprises a first absorbing pigment and a second absorbing pigment, wherein absorption spectrum ranges of the first and second absorbing pigments correspond to spectral bands of lights with the other two colors of the three primary colors respectively.
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9.发明申请公开(公告)号：US20180217496A1
公开(公告)日：2018-08-02
申请号：US15542339
申请日：2017-01-03
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yonglian Qi , Bin Zhang , Tingting Zhou
CPC classification number: G03F7/0043 , B82Y20/00 , G02F1/133617 , G02F2202/36 , G03F7/0007 , G03F7/0047 , G03F7/027 , G03F7/033
Abstract: A quantum dot photoresist and a manufacturing method thereof, a display substrate and a display device are provided. The manufacturing method of the quantum dot photoresist includes: mixing quantum dots, photodiffusion materials and photoresist mother solution; surface treatment is carried out on the photodiffusion materials or the quantum dots. The quantum dot photoresist prepared by the manufacturing method of the quantum dot photoresist can be applied to the display device, and the photodiffusion materials can refract incident light to the quantum dots, so that light irradiated onto the quantum dots is increased, and thus, a problem of a low utilization rate of the incident light can be solved, and a display effect of the display device can be enhanced.
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10.发明申请公开(公告)号：US20170194530A1
公开(公告)日：2017-07-06
申请号：US15256943
申请日：2016-09-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tingting Zhou , Bin Zhang , Yonglian Qi , Dini Xie
CPC classification number: G03F7/16 , G03F7/0007 , G03F7/0047 , G03F7/027 , H01L33/502
Abstract: A quantum dot film, its preparation method, its patterning method and its display device are provided. Quantum dots can be efficiently dispersed in a photoresist solution to obtain a quantum dot film with a high concentration of quantum dots. The quantum dot film is prepared from the following raw materials: quantum dots, greater than 0 and less than or equal to 60 parts by weight; a dispersant, from 5 to 90 parts by weight; a resin, from 5 to 45 parts by weight; a monomer containing an unsaturated double bond, from 0.5 to 18 parts by weight; a photoinitiator from 0.1 to 3 parts by weight; silicon coupling agent, from 0.1 to 7 parts by weight; an auxiliary, from 0.1 to 1 part of weight; and a solvent, from 40 to 85 parts by weight. This disclosure can be applied in quantum dot film preparation processes.
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