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    Mram etching processes
    81.
    发明申请
    Mram etching processes 有权
    摩擦蚀刻工艺

    公开(公告)号：US20130052752A1

    公开(公告)日：2013-02-28

    申请号：US13199490

    申请日：2011-08-30

    Applicant: Kimihiro Satoh ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger K. Malmhall

    Inventor： Kimihiro Satoh ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger K. Malmhall

    IPC: H01L21/8246

    CPC classification number: H01L43/12 ,  H01L29/00

    Abstract: Various embodiments of the invention relate to etching processes used in fabrication of MTJ cells in an MRAM device. The various embodiments can be used in combination with each other. The first embodiment adds a hard mask buffer layer between a hard mask and a top electrode. The second embodiment uses a multilayered etching hard mask. The third embodiment uses a multilayered top electrode structure including a first Cu layer under a second layer such as Ta. The fourth embodiment is a two-phase etching process used for the bottom electrode to remove re-deposited material while maintaining a more vertical sidewall etching profile. In the first phase the bottom electrode layer is removed using carbonaceous reactive ion etching until the endpoint. In the second phase an inert gas and/or oxygen plasma is used to remove the polymer that was deposited during the previous etching processes.

    Abstract translation: 本发明的各种实施例涉及用于制造MRAM装置中的MTJ电池的蚀刻工艺。 各种实施例可以彼此组合使用。 第一实施例在硬掩模和顶电极之间添加硬掩模缓冲层。 第二实施例使用多层蚀刻硬掩模。 第三实施例使用包括第二层如Ta之下的第一Cu层的多层顶电极结构。 第四实施例是用于底部电极去除再沉积材料同时保持更垂直侧壁蚀刻轮廓的两相蚀刻工艺。 在第一阶段中，使用碳质反应离子蚀刻去除底部电极层直到端点。 在第二阶段中，使用惰性气体和/或氧等离子体去除在先前蚀刻工艺期间沉积的聚合物。

    Magnetic memory sensing circuit
    82.
    发明授权
    Magnetic memory sensing circuit 有权
    磁记忆检测电路

    公开(公告)号：US08363457B2

    公开(公告)日：2013-01-29

    申请号：US12125866

    申请日：2008-05-22

    Applicant: Parviz Keshtbod

    Inventor： Parviz Keshtbod

    IPC: G11C11/00

    CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693

    Abstract: A sensing circuit includes a sense amplifier circuit having a first and second nodes through which a magnetic memory element is sensed. A first current source is coupled to the first node a second current source is coupled to the second node. A reference magnetic memory element has a resistance associated therewith and is coupled to the first node, the reference magnetic memory element receives current from the first current source. At least one memory element, having a resistance associated therewith, is coupled to the second node and receives current from the second current source. Current from the first current source and current from the second current source are substantially the same. The logic state of the at least one memory element is sensed by a comparison of the resistance of the at least one memory element to the resistance of the reference magnetic memory element.

    Abstract translation: 感测电路包括具有第一和第二节点的读出放大器电路，通过该第一和第二节点检测磁存储元件。 第一电流源耦合到第一节点，第二电流源耦合到第二节点。 参考磁存储元件具有与之相关联的电阻并且耦合到第一节点，参考磁存储元件从第一电流源接收电流。 具有与其相关联的电阻的至少一个存储元件耦合到第二节点并从第二电流源接收电流。 来自第一电流源的电流和来自第二电流源的电流基本相同。 通过比较至少一个存储元件的电阻与参考磁存储元件的电阻来感测至少一个存储元件的逻辑状态。

    NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
    83.
    发明申请
    NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER 有权
    具有分级层的非易失性磁记忆元件

    公开(公告)号：US20120230095A1

    公开(公告)日：2012-09-13

    申请号：US13476879

    申请日：2012-05-21

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: G11C11/16

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

    Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

    Abstract translation: 非易失性磁存储元件包括多个层，其中之一是分级的自由层。 分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度 是基于磁性化合物的反应性。

    Non-volatile magnetic memory with low switching current and high thermal stability
    84.
    发明授权
    Non-volatile magnetic memory with low switching current and high thermal stability 有权
    具有低开关电流和高热稳定性的非易失性磁存储器

    公开(公告)号：US08183652B2

    公开(公告)日：2012-05-22

    申请号：US11739648

    申请日：2007-04-24

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the first free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second free layer, and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在第一自由层的顶部上的粒状膜层，形成在第一自由层顶部的第二自由层 颗粒膜层，形成在第二自由层顶部上的盖层，以及形成在盖层顶部上的顶部电极。

    NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY
    86.
    发明申请
    NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY 审中-公开
    基于非均匀开关的非易失性磁性存储器

    公开(公告)号：US20120069643A1

    公开(公告)日：2012-03-22

    申请号：US13305677

    申请日：2011-11-28

    Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    IPC: G11C11/00

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

    Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

    Abstract translation: 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。

    Non-Volatile Magnetic Memory Element with Graded Layer
    87.
    发明申请
    Non-Volatile Magnetic Memory Element with Graded Layer 有权
    具有梯度层的非易失性磁记忆元件

    公开(公告)号：US20120025338A1

    公开(公告)日：2012-02-02

    申请号：US13253916

    申请日：2011-10-05

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: H01L29/82

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

    Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

    Abstract translation: 非易失性磁存储元件包括多个层，其中之一是分级的自由层。 分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度 是基于磁性化合物的反应性。

    Non-uniform switching based non-volatile magnetic based memory
    89.
    发明授权
    Non-uniform switching based non-volatile magnetic based memory 有权
    基于非均匀开关的非易失性磁性存储器

    公开(公告)号：US08084835B2

    公开(公告)日：2011-12-27

    申请号：US11674124

    申请日：2007-02-12

    Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

    Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

    Abstract translation: 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。

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